Thomas Michael O'Brien

US Patent:

7111757, Sep 26, 2006

Filed:

Sep 12, 2003

Appl. No.:

10/660894

Inventors:

Thomas Matthew O'Brien - New Lebanon OH, US
Charles William Merten - Dayton OH, US

International Classification:

B67D 5/16

US Classification:

222 71, 222 1, 222 63, 222 72, 222135, 222340, 222386

Abstract:

Devices and methods for accurate volumetric measurement and dispensing of any liquid, regardless of that liquid's density and vapor pressure, are disclosed. This invention employs devices and methods which are used to eliminate free volume from a variable volume chamber. A desired volume of liquid can be measured accurately within the volume range of the chamber. These devices and methods are suitable for volumetric measurement and dispensing of any liquid, regardless of density or vapor pressure.

US Patent:

7416332, Aug 26, 2008

Filed:

Mar 29, 2006

Appl. No.:

11/391826

Inventors:

Timothy D. Rountree - Rochester NY, US
Thomas D. O'Brien - Honeoye Falls NY, US
Kenneth Beghini - Spencerport NY, US

Assignee:

Harris Corporation - Melbourne FL

International Classification:

G01K 1/08
G01K 1/14

US Classification:

374152, 374153, 374208, 374 E1018, 374 E1019, 374 E1021, 257731, 257732, 257733, 257180

Abstract:

A temperature sensing system for a flange mounted device is provided. The temperature sensing system () can be comprised of a flexible wiring board (). The temperature sensing system can be further comprised of a temperature sensing device () mounted to the flexible wiring board. The flexible wiring board can have one or more conductive traces () disposed thereon. The conductive traces can form an electrical connection with the temperature sensing device. The temperature sensing system can also comprise a thermal pad directly connected to the temperature sensing device. The thermal pad can be formed of a thermal conductor. The thermal pad can also have a thermal contact surface. The thermal contact surface can be sized and shaped for direct physical contact with a portion of the device (), wherein thermal energy is communicated directly from the thermal pad to the temperature sensing device. A method for sensing a temperature of a flange mounted device is also provided.

US Patent:

7583950, Sep 1, 2009

Filed:

Oct 5, 2006

Appl. No.:

11/539048

Inventors:

John D. Russell - Rochester NY, US
Thomas D. O'Brien - Honeoye Falls NY, US

Assignee:

Harris Corporation - Melbourne FL

International Classification:

H04B 1/16
H04B 1/10

US Classification:

455339, 455290, 455307

Abstract:

A tunable bandpass filter () is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V V) inputted to the tunable bandpass filter () switches a first arrangement and a second arrangement of one or more tuning portions (---) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter () is produced by the switching. The tuning portions include the GaAs FET switch (), a first capacitor (-) connected at a first signal terminal of the GaAs FET switch and a second capacitor (-) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

US Patent:

8107917, Jan 31, 2012

Filed:

Apr 16, 2009

Appl. No.:

12/424710

Inventors:

John D. Russell - Rochester NY, US
Thomas D. O'Brien - Honeoye Falls NY, US

Assignee:

Harris Corporation - Melbourne FL

International Classification:

H04B 1/18
H04B 1/16

US Classification:

455290, 455307, 455339

Abstract:

A tunable bandpass filter () is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V, V) inputted to the tunable bandpass filter () switches a first arrangement and a second arrangement of one or more tuning portions (---) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter () is produced by the switching. The tuning portions include the GaAs FET switch (), a first capacitor (-) connected at a first signal terminal of the GaAs FET switch and a second capacitor (-) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

US Patent:

8185081, May 22, 2012

Filed:

Jul 22, 2009

Appl. No.:

12/507465

Inventors:

John D. Russell - Rochester NY, US
Thomas D. O'Brien - Honeoye Falls NY, US

Assignee:

Harris Corporation - Melbourne FL

International Classification:

H04B 1/10
H04B 1/18

US Classification:

455307, 455339, 455290

Abstract:

A tunable bandpass filter () is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V, V) inputted to the tunable bandpass filter () switches a first arrangement and a second arrangement of one or more tuning portions (---) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter () is produced by the switching. The tuning portions include the GaAs FET switch (), a first capacitor (-) connected at a first signal terminal of the GaAs FET switch and a second capacitor (-) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

US Patent:

8258857, Sep 4, 2012

Filed:

Aug 25, 2010

Appl. No.:

12/868587

Inventors:

Kenneth C. Adkins - Mason OH, US
Sang Ton Ngo - San Jose CA, US
M. Abid Hussain - Los Altos CA, US
Thomas O'Brien - Powell OH, US
Sridhar Kotikalapoodi - Santa Clara CA, US
George A. Hall - Orangevale CA, US

Assignee:

Summit Microelectronics, Inc. - San Diego CA

International Classification:

G05F 1/10

US Classification:

327536

Abstract:

Embodiments of the present invention include charge pump circuits and methods. In one embodiment, a first charge pump receives a voltage and generates a first charge pump output voltage and current for supplying the power requirements of a circuit. A second charge pump is coupled in series with the first charge pump. The second charge pump generates a second charge pump output voltage and current for supplying different power requirements of the circuit. In one embodiment, the first charge pump provides a high current low voltage output to a first circuit and the second charge pump provides a low current high voltage output to a second circuit. Capacitors of the first charge pump may be external to an integrated circuit and capacitors of the second charge pump may be internal to the integrated circuit.

US Patent:

8260473, Sep 4, 2012

Filed:

Apr 12, 2010

Appl. No.:

12/758225

Inventors:

Thomas Daniel O'Brien - Honeoye Falls NY, US
Mark David Rodzinka - Farmington NY, US
Joseph Gerard Trabold - Rochester NY, US

Assignee:

L-3 Services, Inc. - San Diego CA

International Classification:

G05D 23/00
G06F 1/00

US Classification:

700299, 713323

Abstract:

A system for managing the operation of a semiconductor device in accordance with varying load conditions that affect the power being dissipated by the semiconductor device, includes a sensor for measuring a temperature related to the junction temperature of an operating semiconductor device; electronic components for measuring the real-time operating load conditions of the operating semiconductor device; and a computer that is adapted by computer executable program instructions to perform the steps of:.

US Patent:

8344791, Jan 1, 2013

Filed:

Aug 1, 2012

Appl. No.:

13/564456

Inventors:

Kenneth C Adkins - Mason OH, US
Sang Ton Ngo - San Jose CA, US
M Abid Hussain - Los Altos CA, US
Thomas O'Brien - Powell OH, US
Sridhar Kotikalapoodi - Santa Clara CA, US
George A Hall - Orangevale CA, US

Assignee:

Qualcomm Incorporated - San Diego CA

International Classification:

G05F 1/10

US Classification:

327536

Abstract:

Embodiments of the present invention include charge pump circuits and methods. In one embodiment, a first charge pump receives a voltage and generates a first charge pump output voltage and current for supplying the power requirements of a circuit. A second charge pump is coupled in series with the first charge pump. The second charge pump generates a second charge pump output voltage and current for supplying different power requirements of the circuit. In one embodiment, the first charge pump provides a high current low voltage output to a first circuit and the second charge pump provides a low current high voltage output to a second circuit. Capacitors of the first charge pump may be external to an integrated circuit and capacitors of the second charge pump may be internal to the integrated circuit.