Thomas F Rust

US Patent:

6982898, Jan 3, 2006

Filed:

Oct 14, 2003

Appl. No.:

10/684883

Inventors:

Thomas F. Rust - Oakland CA, US

Assignee:

Nanochip, Inc. - Fremont CA

International Classification:

G11C 11/00

US Classification:

365151, 365114

Abstract:

Memory devices in accordance with the present invention can comprise a molecular memory integrated circuit including a set of actuators capable of moving one or more platforms. In one embodiment the platforms can include either a memory device or a Molecular Array Read/Write Engine (MARE) with a cantilever system having at least one cantilever tip. When a first platform with a memory device is brought within close proximity of a second platform with a MARE, the actuators can position the cantilever tip to a specific location on the memory device. The tip of the cantilever can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. This description is not intended to be a complete description of, or limit the scope of, the invention.

US Patent:

6985377, Jan 10, 2006

Filed:

Oct 14, 2003

Appl. No.:

10/685045

Inventors:

Thomas F. Rust - Oakland CA, US

Assignee:

Nanochip, Inc. - Fremont CA

International Classification:

G11C 11/00

US Classification:

365151, 365174

Abstract:

A media device includes a phase change media having altered resistivity where data is written to the media. The media includes an overcoat to reduce physical damage inflicted on the media from a device such as a cantilever tip in a molecular memory integrated circuit used to write to or read from the media. Data written to the media can be exist in multiple states, allowing digital and/or analog data to be stored on the media.

US Patent:

7233517, Jun 19, 2007

Filed:

Oct 14, 2003

Appl. No.:

10/684661

Inventors:

Thomas F. Rust - Oakland CA, US

Assignee:

Nanochip, Inc. - Fremont CA

International Classification:

G11C 11/00

US Classification:

365151, 365174

Abstract:

A device in accordance with embodiments of the present invention comprises an atomic probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the atomic probe can include a core having a conductive coating. The core can comprise an insulating or conducting material, and the coating can comprise one or more of titanium nitride, platinum, diamond-like carbon, tungsten carbide, tungsten, and tungsten oxide. Atomic probes in accordance with the present invention can be applied to a phase change media, for example to form an indicia in the phase change media by changing the structure of a portion of the media from one of a crystalline or amorphous structure to the other of the crystalline and amorphous structure.

US Patent:

7301887, Nov 27, 2007

Filed:

Dec 3, 2004

Appl. No.:

11/003955

Inventors:

Thomas F. Rust - Oakland CA, US
Robert N. Stark - Saratoga CA, US
Thomas L. Noggle - Oakland CA, US
Daniel F. Cribbs - Los Gatos CA, US

Assignee:

Nanochip, Inc. - Fremont CA

International Classification:

G11B 9/00

US Classification:

369126, 369 3001

Abstract:

Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.

US Patent:

7336524, Feb 26, 2008

Filed:

Dec 29, 2005

Appl. No.:

11/321136

Inventors:

Thomas F. Rust - Oakland CA, US

Assignee:

Nanochip, Inc. - Fremont CA

International Classification:

G11C 11/00

US Classification:

365151, 365174

Abstract:

A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact probes in accordance with the present invention can be applied to a phase change media, for example, to form an indicia in the phase change media by changing the electrical resistivity of a portion of the phase change media.

US Patent:

7379412, May 27, 2008

Filed:

Dec 3, 2004

Appl. No.:

11/004153

Inventors:

Thomas F. Rust - Oakland CA, US
Robert N. Stark - Saratoga CA, US
Thomas L. Noggle - Oakland CA, US
Daniel F. Cribbs - Los Gatos CA, US

Assignee:

Nanochip, Inc. - Fremont CA

International Classification:

G11B 9/00

US Classification:

369126, 369288

Abstract:

Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.

US Patent:

7391707, Jun 24, 2008

Filed:

Feb 2, 2007

Appl. No.:

11/670941

Inventors:

Thomas F. Rust - Oakland CA, US

Assignee:

Nanochip, Inc. - Fremont CA

International Classification:

G11B 9/00

US Classification:

369126, 369101, 250306, 977947

Abstract:

A memory apparatus comprises a media, a tip adapted to write information to and read information from said media, a media movement mechanism attached to said media and configured to move said media in response to media control signals, and a capacitive sensor configured to detect an amount of relative movement of said media and said tip in at least an x-axis direction. The capacitive sensor includes a fixed comb having fingers protruding in an x-axis direction, a moving comb connected having fingers protruding in an x-axis direction, and an electrical path connected to said fixed comb and an electrical path connected to said moving comb. The relative movement in at least the x-axis direction is determined at least in part on a change in capacitance between said fixed and moving combs of said capacitive sensor.

US Patent:

7414953, Aug 19, 2008

Filed:

Apr 5, 2007

Appl. No.:

11/697275

Inventors:

Thomas F. Rust - Oakland CA, US
Robert N. Stark - Saratoga CA, US
Thomas L. Noggle - Oakland CA, US
Daniel F. Cribbs - Los Gatos CA, US

Assignee:

Nanochip, Inc. - Fremont CA

International Classification:

G11B 9/00

US Classification:

369126, 369288

Abstract:

A data storage device comprises a media including a memory layer within which are formable domains associated with information, and a conductive layer disposed over the memory layer, the conductive layer having anisotropically increased electrical conductivity in a thickness direction. A conductive tip contactable with the conductive layer is adapted to form domains within the memory layer and one of the conductive tip and the media is movable to access the memory layer.