Thomas William Stacy

US Patent:

20200083021, Mar 12, 2020

Filed:

Aug 26, 2019

Appl. No.:

16/551042

Inventors:

- Gloucester MA, US
Eric D. Hermanson - Georgetown MA, US
Philip Layne - Salem MA, US
Lyudmila Stone - Lynnfield MA, US
Thomas Stacy - Beverly MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01J 37/317
H01L 21/02
H01L 21/768

Abstract:

Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.

US Patent:

20200083027, Mar 12, 2020

Filed:

Oct 16, 2018

Appl. No.:

16/161989

Inventors:

- Gloucester MA, US
Eric D. Hermanson - Georgetown MA, US
Philip Layne - Salem MA, US
Lyudmila Stone - Lynnfield MA, US
Thomas Stacy - Beverly MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01J 37/32
H01J 37/317
H01L 21/265

Abstract:

Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield having a first main side facing an ion beam target, and a connection block coupled to a second main side of the first shield. The shield assembly may further include a mounting plate coupled to the connection block, and a second shield coupled to the mounting plate by a bracket. In some embodiments, the first shield and/or one or more process chamber walls includes a foam material, such as a conductive or nonconductive foam.