Thomas Arthur Wagner

Address:

1108 Sunford Ave SE, North Canton, OH 44720

Phone:

(330)4944614

VIN:

JHLRE48577C034853

Make:

HONDA

Model:

CR-V

Year:

2007

US Patent:

6943417, Sep 13, 2005

Filed:

May 1, 2003

Appl. No.:

10/427691

Inventors:

Thomas Boland - Suwanee GA, US
Thomas E. Wagner - Greer SC, US

Assignee:

Clemson University - Clemson SC

International Classification:

H01L027/10

US Classification:

257414, 257 40

Abstract:

The present invention is directed to a memory device having very high storage density capability. In general, the memory device includes an array of individual memory cells which store information that is assigned a value based on the molecular contents of the memory cell. In a preferred embodiment, the molecules utilized for storing information in the memory cells may be single-strand polynucleotides, for instance single-strand oligonucleotides of between about 5 and about 20 monomer units. The present invention is also directed to methods and systems useful for writing and reading the molecular-based memory devices. In particular, the devices may be written and read via modified atomic force microscopy processes.

US Patent:

7659175, Feb 9, 2010

Filed:

May 5, 2008

Appl. No.:

12/115184

Inventors:

Thomas Boland - Suwanee GA, US
Thomas E. Wagner - Greer SC, US

Assignee:

Clemson University - Clemson SC

International Classification:

H01L 21/20

US Classification:

438381, 438238, 257E21007, 257E21283, 257E21645

Abstract:

The present invention is directed to a memory device having very high storage density capability. In general, the memory device includes an array of individual memory cells which store information that is assigned a value based on the molecular contents of the memory cell. In a preferred embodiment, the molecules utilized for storing information in the memory cells may be single-strand polynucleotides, for instance single-strand oligonucleotides of between about 5 and about 20 monomer units. The present invention is also directed to methods and systems useful for writing and reading the molecular-based memory devices. In particular, the devices may be written and read via modified atomic force microscopy processes.

US Patent:

7659590, Feb 9, 2010

Filed:

Mar 28, 2005

Appl. No.:

11/091300

Inventors:

Thomas Boland - Suwanee GA, US
Thomas E. Wagner - Greer SC, US

Assignee:

Clemson University - Clemson SC

International Classification:

H01L 27/10

US Classification:

257414, 257 40, 257E51045, 257E51037, 977946

Abstract:

The present invention is directed to a memory device having very high storage density capability. In general, the memory device includes an array of individual memory cells which store information that is assigned a value based on the molecular contents of the memory cell. In a preferred embodiment, the molecules utilized for storing information in the memory cells may be single-strand polynucleotides, for instance single-strand oligonucleotides of between about 5 and about 20 monomer units. The present invention is also directed to methods and systems useful for writing and reading the molecular-based memory devices. In particular, the devices may be written and read via modified atomic force microscopy processes.

US Patent:

51558335, Oct 13, 1992

Filed:

May 11, 1987

Appl. No.:

7/048151

Inventors:

Dennis L. Cullison - Naperville IL
Thomas A. Wagner - Warrenville IL

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G06F 1200

US Classification:

395425

Abstract:

In a master-slave multiprocessor (FIG. 1), a slave processor (110) includes a random access memory array (119) that serves at initialization time as the slave processor's boot memory and that serves during normal operation time as the slave processor's cache memory. A master processor (120) writes the slave processor's boot program into the memory array when the memory array is to serve as the boot memory, i. e. , following system reset.

US Patent:

48163317, Mar 28, 1989

Filed:

Jan 2, 1987

Appl. No.:

7/000220

Inventors:

Robert B. Rau - Aurora OH
Thomas C. Wagner - Pittsburgh PA

Assignee:

PPG Industries, Inc. - Pittsburgh PA

International Classification:

B32B 508
B05D 106

US Classification:

428294

Abstract:

Pultruded plastic substrates are produced which contain fine conductive elements of metal wires or conductive rovings. These conductive element containing pultruded articles are electrostatically coated.