Timothy Wayne Campbell

US Patent:

6451660, Sep 17, 2002

Filed:

Jun 9, 2000

Appl. No.:

09/591037

Inventors:

Yi Ma - Orlando FL
Yih-Feng Chyan - Orlando FL
Chung Wai Leung - Orlando FL
Jane Qian Liu - Orlando FL
Timothy Scott Campbell - Gotha FL

Assignee:

Agere Systems Guardian Corp. - Allentown PA

International Classification:

H01L 2131

US Classification:

438343, 438765, 438770

Abstract:

A bipolar device ( ) includes an oxide layer ( ) which is grown on the surface ( ) of a semiconductor substrate ( ) by immersing the surface in ozonated deionized water. By selecting an appropriate temperature of the water and concentration of the ozone, the thickness of the film can be maintained within fine tolerances from lot to lot, and over the surface of a wafer (W) comprising the substrate.

US Patent:

7078337, Jul 18, 2006

Filed:

Sep 30, 2003

Appl. No.:

10/675263

Inventors:

Timothy S. Campbell - Gotha FL, US
Daniel P. Chesire - Winter Garden FL, US
Kelly Hinckley - Orlando FL, US
Gregory A. Head - Orlando FL, US
Benu B. Patel - Orlando FL, US

Assignee:

Agere Systems Inc. - Allentown PA

International Classification:

H01L 29/40

US Classification:

438639, 438689

Abstract:

A process for etching a sacrificial layer of a structure. The structure is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process is selective in that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Applications of the process include the formation of integrated circuit structures and MEMS structures.

US Patent:

7157375, Jan 2, 2007

Filed:

Aug 25, 2004

Appl. No.:

10/925555

Inventors:

Timothy Scott Campbell - Gotha FL, US
Kelly Hinckley - Orlando FL, US
Paul B. Murphey - Winter Garden FL, US
Daniel M. Oman - Orlando FL, US
Paul Edward Wheeler - Clermont FL, US

Assignee:

Agere Systems, Inc. - Allentown PA

International Classification:

H01L 21/302

US Classification:

438689, 438637, 438726, 134 12, 134 13, 4352831

Abstract:

A process for photoresist layer removal from a semiconductor wafer comprises exposing at relatively high temperature the wafer to an RIE-free microwave-energy-generated plasma of a primary gas mixture, the exposing causing photoresist removal such as by ashing. The method also comprises determining an endpoint to the removal by a determined change in the visible light emanating from a chamber containing the wafer. A multi-step process of the present invention comprises the above method and a preliminary RIE-free microwave-energy-generated plasma that solubilizes polymer on walls of vias of the wafer. This multi-step process also comprises, following the exposing step, a cooling step, a cooling step with a temperature check, and a deglazing step. The deglazing step also uses an RIE-free microwave-energy-generated plasma. Specific gas mixtures for the respective plasmas are exemplified.

US Patent:

7476951, Jan 13, 2009

Filed:

Mar 6, 2006

Appl. No.:

11/368780

Inventors:

Timothy S. Campbell - Gotha FL, US
Daniel P. Chesire - Winter Garden FL, US
Kelly Hinckley - Orlando FL, US
Gregory A. Head - Orlando FL, US
Benu B. Patel - Orlando FL, US

Assignee:

Agere Systems Inc. - Allentown PA

International Classification:

H01L 29/84
C23C 1/001

US Classification:

257415, 216 2

Abstract:

A process for etching a sacrificial layer of a structure. The structure is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process is selective in that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Applications of the process include the formation of integrated circuit structures and MEMS structures.

US Patent:

20050191863, Sep 1, 2005

Filed:

Jan 20, 2005

Appl. No.:

11/039354

Inventors:

Leonard Olmer - Orlando FL, US
Thomas Lahey - Windermere FL, US
Timothy Campbell - Allentown PA, US
Robert Schanzer - Orlando FL, US
David Shuttleworth - Orlando FL, US

International Classification:

B05D001/36
B05D007/00
H01L021/4763
H01L021/31
H01L021/469

US Classification:

438763000, 427419300, 438761000, 438781000, 438784000

Abstract:

A method for improving throughput in a semiconductor wafer deposition process in a high density plasma chamber includes processing a first wafer in the high density plasma chamber using a process that includes high power sufficient to burn fluorosilicate glass residue in the chamber. The method further includes removing the first wafer and processing additional wafers using the same process without cleaning the chamber between wafers.