Timothy C Frey

US Patent:

7369483, May 6, 2008

Filed:

Jan 21, 2005

Appl. No.:

10/588066

Inventors:

W. Dennis Slafer - Arlington MA, US
Matthew White - Cohasset MA, US
Milford Kime - Cambridge MA, US
Timothy Frey - Hudson MA, US

Assignee:

MicroContinuum, Inc. - Cambridge MA

International Classification:

G11B 7/24

US Classification:

3692754, 369283

Abstract:

A pre-formatted optical data storage tape () including an elongated linear polymer layer having at least one pattern of optically readable embossments () on at least one surface of the polymer layer, and an optical recording layer covering the pattern of optically readable embossments () of the elongated linear polymer layer, wherein the optical recording layer is adapted such that recorded marks () may be made in the recording layer by directing a focused source of energy into the recording layer.

US Patent:

7943411, May 17, 2011

Filed:

May 4, 2009

Appl. No.:

12/434772

Inventors:

John R. Martin - Foxborough MA, US
Timothy J. Frey - Hudson MA, US
Christine H. Tsau - Arlington MA, US

Assignee:

Analog Devices, Inc. - Norwood MA

International Classification:

H01L 21/00
H01L 21/30
H01L 21/46

US Classification:

438 50, 438 53, 438455, 438406

Abstract:

A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.

US Patent:

7969832, Jun 28, 2011

Filed:

Feb 2, 2007

Appl. No.:

11/670812

Inventors:

George Raniuk - Westboro MA, US
Michael Kearnan - Mendon MA, US
Paul Coles - Sharon MA, US
Faramarz Mahnad - Brookline MA, US
Joseph Panish - Littleton MA, US
Carl A. Maietta - Hudson MA, US
John Ritter - Harvard MA, US
Satya Mallick - Milford MA, US
Timothy J. Frey - Hudson MA, US
Dennis Lauze - Rutland MA, US
Makoto Miyamoto - Ibaraki, JP

Assignee:

Oracle America, Inc. - Redwood City CA

International Classification:

G11B 7/00

US Classification:

369 4428, 369 97

Abstract:

Disclosed herein are aspects of optical tape technology, tape manufacturing, and tape usage. Methods and systems of tape technology disclose optical tape media including: configurations, formulations, markings, and structure; optical tape manufacturing methods, systems, and apparatus methods and systems including: curing processes, coating methods, embossing, drums, testing, tracking alignment stamper strip; optical tape methods and systems including: pick up head adapted for the disclosed optical tape; and optical tape uses including optical storage media devices for multimedia applications.

US Patent:

7981765, Jul 19, 2011

Filed:

May 4, 2009

Appl. No.:

12/434886

Inventors:

John R. Martin - Foxborough MA, US
Christine H. Tsau - Arlington MA, US
Timothy J. Frey - Hudson MA, US

Assignee:

Analog Devices, Inc. - Norwood MA

International Classification:

H01L 21/30
H01L 21/46

US Classification:

438455, 438107, 438113, 257E21499, 257E21599

Abstract:

A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.

US Patent:

8288191, Oct 16, 2012

Filed:

Apr 8, 2011

Appl. No.:

13/082834

Inventors:

John R. Martin - Foxborough MA, US
Timothy J. Frey - Hudson MA, US
Christine H. Tsau - Arlington MA, US

Assignee:

Analog Devices, Inc. - Norwood MA

International Classification:

H01L 21/46
H01L 21/48
H01L 21/50
H01L 21/00
H01L 21/84

US Classification:

438 50, 438113, 438455, 438166

Abstract:

A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.

US Patent:

8293582, Oct 23, 2012

Filed:

Jun 15, 2011

Appl. No.:

13/161108

Inventors:

John R. Martin - Foxborough MA, US
Christine H. Tsau - Arlington MA, US
Timothy J. Frey - Hudson MA, US

Assignee:

Analog Devices, Inc. - Norwood MA

International Classification:

H01L 21/44
H01L 21/48
H01L 21/50

US Classification:

438113, 438455, 257E21499

Abstract:

A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.

US Patent:

8304861, Nov 6, 2012

Filed:

Jun 15, 2011

Appl. No.:

13/161102

Inventors:

John R. Martin - Foxborough MA, US
Christine H. Tsau - Arlington MA, US
Timothy J. Frey - Hudson MA, US

Assignee:

Analog Devices, Inc. - Norwood MA

International Classification:

H01L 29/06

US Classification:

257618, 257E29002, 438455

Abstract:

A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.

US Patent:

20130023082, Jan 24, 2013

Filed:

Sep 20, 2012

Appl. No.:

13/623633

Inventors:

Analog Devices, Inc. - Norwood MA, US
Timothy J. Frey - Hudson MA, US
Christine H. Tsau - Arlington MA, US
Michael W. Judy - Ipswich MA, US

Assignee:

Analog Devices, Inc. - Norwood MA

International Classification:

H01L 21/762
H01L 21/50

US Classification:

438 51, 438113, 438110, 257E21499, 257E21567

Abstract:

A method of forming a MEMS device provides first and second wafers, where at least one of the first and second wafers has a two-dimensional array of MEMS devices. The method deposits a layer of first germanium onto the first wafer, and a layer of aluminum-germanium alloy onto the second wafer. To deposit the alloy, the method deposits a layer of aluminum onto the second wafer and then a layer of second germanium to the second wafer. Specifically, the layer of second germanium is deposited on the layer of aluminum. Next, the method brings the first wafer into contact with the second wafer so that the first germanium in the aluminum-germanium alloy contacts the second germanium. The wafers then are heated when the first and second germanium are in contact, and cooled to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices.