Timothy J Warfield

US Patent:

61465410, Nov 14, 2000

Filed:

May 2, 1997

Appl. No.:

8/848849

Inventors:

Laurie A. Goldstein - Scottsdale AZ
Timothy J. Warfield - Gilbert AZ
Jane K. Gates - Chandler AZ
Elizabeth Apen - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 21302

US Classification:

216 2

Abstract:

A semiconductor wafer (11) having a dielectric layer (12) is used as a calibration standard (10) to calibrate thickness measuring equipment in a wafer processing or manufacturing area. The thickness of the dielectric layer (12) is maintained to a desired thickness by heating the calibration standard (10) to remove contaminants from the dielectric layer (12).

US Patent:

52325636, Aug 3, 1993

Filed:

Jul 27, 1992

Appl. No.:

7/920070

Inventors:

Timothy J. Warfield - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

C25F 100

US Classification:

2041415

Abstract:

A method of removing contaminants (16) from a semiconductor wafer (10) includes placing the semiconductor wafer (10) into an ionic solution (19). A plurality of bubbles (24) are created along the surface of the semiconductor wafer (10). The bubbles (24) lift the contaminants (16) from the wafer (10) thereby floating the contaminants (16) off the wafer (10) and producing a clean wafer (10). Since the bubbles (24) form along the surface of the wafer's (10) recesses (14), contaminants (16) within the recess (14) are removed. The bubbles facilitate removing both organic and inorganic contaminants (16).

US Patent:

54116295, May 2, 1995

Filed:

Feb 3, 1992

Appl. No.:

7/829193

Inventors:

Timothy J. Warfield - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2100

US Classification:

216 34

Abstract:

A method for roughening a principal surface (12) of a halocarbon film (11). The halocarbon film (11) is treated with a colloidal suspension wherein the colloidal suspension includes light metal atoms. The light metal atoms combine with halogen atoms of the halocarbon film, thereby toughening the principal surface (12) and giving the principal surface (12) a burnt appearance.

US Patent:

55121632, Apr 30, 1996

Filed:

Apr 1, 1994

Appl. No.:

8/221591

Inventors:

Timothy J. Warfield - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

C25D 1500
H01L 21463
H01L 21465

US Classification:

205109

Abstract:

A method for stopping a polish planarization wherein an etch-stop layer (13, 21, 31) is formed. The etch-stop layer (13, 21, 31) may be formed on a substrate (11) or on a conductive layer (12). The etch-stop layer (13, 21, 31) includes a metal and a grit material (17, 25, 35) such as a diamond powder. The etch-stop layer (13, 21, 31) serves as a stop to a mechanical polishing apparatus. The mechanical polishing apparatus removes a planarization layer (14, 22, 33) by polishing, but is unable to remove the etch-stop layer (13, 21, 31) because the etch-stop layer is able to withstand a polishing action of the mechanical polishing apparatus. The etch-stop layer (13, 21, 31) provides protection for the metal from mechanical damage during polish planarization and allows formation of a planar surface.

US Patent:

56041608, Feb 18, 1997

Filed:

Jul 29, 1996

Appl. No.:

8/687904

Inventors:

Timothy J. Warfield - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2160

US Classification:

437209

Abstract:

A cap wafer (10) is used to package semiconductor devices on a device wafer (30). Successive etching processes form a plurality of partially etched cavities (27) extending from a front surface (11) of the cap wafer (10) into the cap wafer (10). The pattern of the partially etched cavities (27) is determined in accordance with the pattern of dies (32) on the device wafer (30). The cap wafer (10) is aligned with the device wafer (30) and bonded to the device wafer (30) using a glass frit as a bonding agent. After being bonded to the device wafer (30), the cap wafer (10) is thinned from the back surface (12) until the back surface (12) of the cap wafer (10) reaches the partially etched cavities (27). The device wafer (30) is then diced into distinct dies.