Donald J. K. Olgado - Palo Alto CA Avi Tepman - Cupertino CA Dmitry Lubomirsky - Cupertino CA Timothy R. Webb - San Mateo CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H01L 2302
US Classification:
438706, 438745
Abstract:
A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.
Plating Uniformity Control By Contact Ring Shaping
Harald Herchen - Los Altos CA, US Henan Hao - Fremont CA, US Celina M. Esteban - Redwood City CA, US Timothy R. Webb - San Mateo CA, US Son N. Trinh - Cupertino CA, US
An apparatus for providing an electrical bias to a substrate in a processing system is described. The apparatus generally includes a conductive annular body defining a central opening. The conductive annular body may have a substrate seating surface adapted to receive the substrate and a plurality of scallops formed on a surface opposing the substrate seating surface. A plurality of electrical contacts may be formed on the substrate seating surface opposite the plurality of scallops. The electrical contacts may be adapted to engage a plating surface of the substrate.
Oxide Treatment And Pressure Control For Electrodeposition
Harald Herchen - Los Altos CA, US Henan Hao - Fremont CA, US Timothy Webb - San Mateo CA, US Quyen Pham - Sunnyvale CA, US Son Trinh - Cupertino CA, US Deenesh Padhi - Santa Clara CA, US
Assignee:
Applied Materials, Inc.
International Classification:
C25D005/34
US Classification:
205/205000, 204/242000
Abstract:
Method and apparatus for electrodepositing a metal onto a substrate. An oxide treatment process is performed on a substrate prior to making electrical contact between a seed layer of the substrate and a conductive contact element which provides a current. In one embodiment, the pressure at the interface between the seed layer and the conductive contact element is controlled to avoid detrimentally affecting a material(s) of the substrate.
Hooman Hafezi - Redwood City CA, US Joseph Behnke - Sunnyvale CA, US Aron Rosenfeld - Palo Alto CA, US Timothy Webb - San Mateo CA, US Joseph Yahalom - Haifa, IL Christopher McGuirk - San Jose CA, US
International Classification:
C25D 5/18
US Classification:
205102000
Abstract:
A method for immersing a substrate into a plating solution. In one embodiment, the method includes applying a first waveform to the substrate as the substrate is being immersed into the plating solution, stopping the application of the first waveform to the substrate as soon as the substrate is fully immersed inside the plating solution, and applying a second waveform to the substrate prior to the substrate being situated into a plating position.
Simon R. LANCASTER-LAROCQUE - Gloucester, CA Erik D. SUOMI - Palo Alto CA, US Timothy Richard WEBB - Portland OR, US Kyung Y. KIM - Portland OR, US Cameron W. SCHNUR - Portland OR, US Bruce W. BALL - Ann Arbor MI, US Carl CAI - Beaverton OR, US
Assignee:
APPLE INC. - Cupertino CA
International Classification:
G05B 19/418
US Classification:
700110
Abstract:
A method, system, and apparatus for intelligent application of a finishing process a surface of a housing is described. In one embodiment, at least a portion of the surface of the housing is imaged. In one embodiment, the image can be rendered using an optical imager such as a standard or high definition camera. In one embodiment, multiple cameras can be used to assist in defining location, size, and depth of surface defects. In one embodiment, an optical imaging device can be used to image surface defects under wet conditions where the surface of the housing is covered with a layer of slurry.
High Density Plasma Etching Of Metallization Layer Using Chlorine And Nitrogen
Stephen F. Powell - Woodside CA Jeffrey V. Musser - Boise ID Robert Guerra - Fremont CA Timothy R. Webb - San Francisco CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21302
US Classification:
438710
Abstract:
A method in a plasma processing chamber for etching through a selected portion of a metallization layer of a wafer's layer stack. The method includes the step of etching at least partially through the metallization layer of the layer stack with an etchant source gas that consists essentially of chlorine and nitrogen. In another embodiment, the metallization layer comprises aluminum, and the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 10:1. More preferably, the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 4:1 and preferably ranges from about 1:1 to about 2:1.
Dr. Webb graduated from the University of Washington SOM in 1993. He works in Waterville, ME and specializes in Family Medicine. Dr. Webb is affiliated with Maine General Medical Center.
Foot & Ankle Associates 5230 Ky Rte 321 STE 1, Prestonsburg, KY 41653 (606)8890095 (phone), (606)8890080 (fax)
Procedures:
Arthrocentesis Hallux Valgus Repair
Conditions:
Hallux Valgus Plantar Fascitis
Languages:
English
Description:
Dr. Webb works in Prestonsburg, KY and specializes in Podiatric Medicine. Dr. Webb is affiliated with Highlands Regional Medical Center and Our Lady Of Bellefonte Hospital.
Dr. Webb graduated from the Kansas City University of Medicine and Biosciences College of Osteopathic Medicine in 1987. He works in Hoisington, KS and 1 other location and specializes in Family Medicine. Dr. Webb is affiliated with Clara Barton Hospital and Russell Regional Hospital.