Executive, Administrative, and Managerial Occupations
Education
Degree:
High school graduate or higher
Specialities
Entertainers • Immigration Law • Family Law • Business Immigration • Employment Immigration • Family Immigration Law • Political Asylum • Deportation • Immigration and Naturalization
Dr. Li graduated from the Sun Yat Sen Univ of Med Sci, Guangzhou, China (242 21 Pr 1/71) in 1984. He works in Norwich, CT and specializes in Cardiovascular Disease. Dr. Li is affiliated with William W Backus Hospital and Yale New Haven Hospital.
Us Patents
Light Emitting Diode With A Dielectric Mirror Having A Lateral Configuration
Matthew Donofrio - Raleigh NC, US John Edmond - Durham NC, US James Ibbetson - Santa Barbara CA, US Ting Li - Ventura CA, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 33/00
US Classification:
257 98, 257 95, 257 99, 257E2109
Abstract:
A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.
Ultra-Thin Ohmic Contacts For P-Type Nitride Light Emitting Devices
Mark Raffetto - Raleigh NC, US Jayesh Bharathan - Cary NC, US Kevin Haberern - Cary NC, US Michael Bergmann - Chapel Hill NC, US David Emerson - Chapel Hill NC, US James Ibbetson - Santa Barbara CA, US Ting Li - Ventura CA, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 29/22
US Classification:
257 99, 257744, 257745
Abstract:
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10ohm-cm.
Ultra-Thin Ohmic Contacts For P-Type Nitride Light Emitting Devices
Mark Raffetto - Raleigh NC, US Jayesh Bharathan - Cary NC, US Kevin Haberern - Cary NC, US Michael Bergmann - Chapel Hill NC, US David Emerson - Chapel Hill NC, US James Ibbetson - Santa Barbara CA, US Ting Li - Ventura CA, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 29/22
US Classification:
257 99, 257744, 257745
Abstract:
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10ohm-cm.
Entertainers Immigration Law Family Law Business Immigration Employment Immigration Family Immigration Law Political Asylum Deportation Immigration and Naturalization
ISLN:
913823079
Admitted:
1997
University:
National Chengchi University, B.A., 1991; State University of New York at Buffalo, M.L.S., 1993
Law School:
State University of New York at Buffalo, J.D., 1997