Todd Wayne Buley

US Patent:

6632127, Oct 14, 2003

Filed:

Mar 4, 2002

Appl. No.:

10/091105

Inventors:

Jerry W. Zimmer - Saratoga CA 95070
Todd W. Buley - Mesa AZ 85208
Albert B. Stubbmann - Bethlehem PA 18020

International Classification:

B24B 2900

US Classification:

451285, 451 41, 451286, 451287, 451288, 428408, 428701, 428702

Abstract:

The present invention is a polishing pad conditioning head for a CMP and similar types of apparatus that is especially useful in conditioning the surface of fixed-abrasive CMP polishing pads to maintain optimal process conditions for the planarization process on dielectric and metal films on semiconductor wafers, as well as wafers and disks used in computer hard disk drives. The polishing pad conditioning head comprises a substrate and a layer of fine-grain chemical vapor deposited polycrystalline diamond that is bonded onto the substrate. Alternatively, a thin sheet of polycrystalline diamond may be deposited on a preferred growth substrate by a chemical vapor deposition process, then removed from the growth substrate and then bonded to the CMP conditioning disk substrate.

US Patent:

59453460, Aug 31, 1999

Filed:

Nov 3, 1997

Appl. No.:

8/963487

Inventors:

James F. Vanell - Tempe AZ
Todd W. Buley - Mesa AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 21302

US Classification:

438691

Abstract:

A chemical mechanical planarization tool that reduces a volume of polishing chemistry used in a wafer polishing process includes a rinse bar (87) for removing polishing chemistry and particulates from a polishing media and a slurry measurement system (84) for regulating a pump (83) of a slurry delivery system. A volume of the slurry delivery system is reduced to less than 100 milliliters. Approximately a minimum volume of polishing chemistry for polishing a single wafer is dispensed during each wafer polishing process of a wafer lot. During each wafer polishing process the slurry delivery system is purged to prevent settling, agglomeration, and hardening of the polishing chemistry. The rinse bar (87) sprays a surface of the polishing media to remove spent polishing chemistry and particulates prior to polishing another semiconductor wafer.

US Patent:

RE357855, May 5, 1998

Filed:

Sep 21, 1995

Appl. No.:

8/570613

Inventors:

Gurtej S. Sandhu - Boise ID
Todd W. Buley - Mesa AZ

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21285

US Classification:

438681

Abstract:

A low-pressure chemical vapor deposition process is disclosed for creating high-density, highly-conformal titanium nitride films which have very low bulk resistivity, and which provide excellent step coverage. The process utilizes a metal-organic compound, tetrakis-dialkylamido-titanium Ti(NR. sub. 2). sub. 4, as the primary precursor, in combination with an activated species which attacks the alkyl-nitrogen bonds of the primary precursor, and which will convert the displaced alkyl groups into a volatile compound. Any noble gas, as well as nitrogen or hydrogen, or a mixture of two or more of the foregoing may be used as a carrier for the precursor. The activated species, which may include a halogen, NH. sub. 3, or hydrogen radicals, or a combination thereof, are generated in the absence of the primary precursor, at a location remote from the deposition chamber. The wafer is heated to a temperature within a range of 200. degree. -600. degree. C.

US Patent:

61495085, Nov 21, 2000

Filed:

May 26, 1999

Appl. No.:

9/318951

Inventors:

James F. Vanell - Tempe AZ
Todd W. Buley - Mesa AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

B24B 5300

US Classification:

451 72

Abstract:

A chemical mechanical planarization tool that reduces a volume of polishing chemistry used in a wafer polishing process includes a rinse bar (87) for removing polishing chemistry and particulates from a polishing media and a slurry measurement system (84) for regulating a pump (83) of a slurry delivery system. A volume of the slurry delivery system is reduced to less than 100 milliliters. Approximately a minimum volume of polishing chemistry for polishing a single wafer is dispensed during each wafer polishing process of a wafer lot. During each wafer polishing process the slurry delivery system is purged to prevent settling, agglomeration, and hardening of the polishing chemistry. The rinse bar (87) sprays a surface of the polishing media to remove spent polishing chemistry and particulates prior to polishing another semiconductor wafer.