Travis J Randall

US Patent:

20090014756, Jan 15, 2009

Filed:

Jul 13, 2007

Appl. No.:

11/826278

Inventors:

Narsingh Bahadur Singh - Ellicott City MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Columbia MD, US
David Kahler - Arbutus MD, US
Andre E. Berghmans - Owing Mills MD, US
Michael Aumer - Raleigh NC, US
Jerry W. Hedrick - Arnold MD, US
Marc E. Sherwin - Catonsville MD, US
Michael M. Fitelson - Columbia MD, US
Mark S. Usefara - Baltimore MD, US
Sean McLaughlin - Severn MD, US
Travis Randall - Baltimore MD, US
Thomas J. Knight - Silver Spring MD, US

International Classification:

H01L 29/739
B32B 5/16
H01L 21/20

US Classification:

257200, 428331, 438492, 438504, 257E29328, 257E21053

Abstract:

A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

US Patent:

20090220801, Sep 3, 2009

Filed:

Feb 29, 2008

Appl. No.:

12/040785

Inventors:

Brian Wagner - Baltimore MD, US
Travis J. Randall - Baltimore MD, US
Thomas J. Knight - Silver Spring MD, US
David J. Knuteson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Andre E. Berghmans - Owing Mills MD, US
Sean R. McLaughlin - Severn MD, US
Narsingh B. Singh - Ellicott City MD, US
Mark Usefara - Baltimore MD, US

International Classification:

C23C 14/34
B32B 9/04

US Classification:

428446, 20419225

Abstract:

The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate.