Viken Tavitian

US Patent:

48430307, Jun 27, 1989

Filed:

Nov 30, 1987

Appl. No.:

7/126891

Inventors:

J. Gary Eden - Mahomet IL
Kevin K. King - Urbana IL
Viken Tavitian - Champaign IL

Assignee:

Eaton Corporation - Cleveland OH

International Classification:

H01L 21306
H01L 2126
H01L 21265

US Classification:

437 88

Abstract:

A semiconductor processing method is provided for growing a semiconductor film from a semiconductorbearing gas on a substrate at a substrate temperature below the pyrolytic threshold of the gas. The gas is photodissociated to a collisionally stable species which migrates and travels in the gas phase the entire distance to the substrate, surving hundreds of collisions, and is pyrolyzed at the surface of the substrate and forms several monolayers of semiconductor material which is substantially more catalytically active than the substrate and which subsequently catalyzes decomposition of the gas.