Virginia Rose Robbins

US Patent:

6586113, Jul 1, 2003

Filed:

Jul 19, 2000

Appl. No.:

09/619418

Inventors:

Sandeep R. Bahl - Palo Alto CA
Yu-Min Houng - Cupertino CA
Virginia M. Robbins - Los Gatos CA
Fred Sugihwo - San Francisco CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

B32B 900

US Classification:

428620, 428642, 428699, 428704, 257200

Abstract:

Systems and methods of manufacturing etchable heterojunction interfaces and etched heterojunction structures are described. A bottom layer is deposited on a substrate, a transition etch layer is deposited over the bottom layer, and a top layer is deposited over the transition etch layer. The transition etch layer substantially prevents the bottom layer and the top layer from forming a material characterized by a composition substantially different than the bottom layer and a substantially non-selective etchability with respect to the bottom layer. By tailoring the structure of the heterojunction interface to respond to heterojunction etching processes with greater predictability and control, the transition etch layer enhances the robustness of previously unreliable heterojunction device manufacturing processes. The transition etch layer enables one or more vias to be etched down to the top surface of the bottom layer in a reliable and repeatable manner. In particular, because the transition etch layer enables use of an etchant that is substantially selective with respect to the bottom layer, the thickness of critical device layers may be determined by the precise epitaxial growth processes used to form the bottom layer rather than relatively imprecise non-selective etch processes.

US Patent:

6771680, Aug 3, 2004

Filed:

Oct 22, 2002

Appl. No.:

10/278003

Inventors:

David P. Bour - Cupertino CA
Jeffrey N. Miller - Los Altos Hills CA
Steve Lester - Palo Alto CA
Virginia Robbins - Los Gatos CA

Assignee:

Agilent Technologies, INC - Palo Alto CA

International Classification:

H01S 500

US Classification:

372 43, 372 44, 372 87

Abstract:

An electrically-pumped vertical-cavity surface-emitting laser (VCSEL) has multiple active regions. Embodiments of the invention provide an electrically-pumped VCSEL having a number of different p-i-n junction and electrode arrangements, which, in various embodiments, allow independent biasing of the multiple active regions, and, in other embodiments, allow simplified electrical connections.

US Patent:

6806110, Oct 19, 2004

Filed:

May 16, 2002

Appl. No.:

10/151646

Inventors:

Steven D. Lester - Palo Alto CA
Virginia M. Robbins - Los Gatos CA
Jeffrey N. Miller - Los Altos Hills CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 2100

US Classification:

438 28, 438 34

Abstract:

A monolithic array of vertical cavity lasers with different emission wavelengths on a single wafer, and method of manufacture therefor, is provided. A first reflector is over the semiconductor substrate with a photoactive semiconductor layer. A reflector support defines first and second air gaps with the photoactive semiconductor layer. The second and third air gaps are made to be different from each other by geometric differences in the reflector support structure. Second and third reflectors are formed over the reflector support whereby a first laser is formed by the first reflector, the photoactive semiconductor structure, the first air gap, and the second reflector and whereby a second laser is formed by the first reflector, the photoactive semiconductor structure, the second air gap, and the third reflector. The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps.

US Patent:

6953702, Oct 11, 2005

Filed:

May 16, 2002

Appl. No.:

10/151631

Inventors:

Jeffrey N. Miller - Los Altos Hills CA, US
Virginia M. Robbins - Los Gatos CA, US
Steven D. Lester - Palo Alto CA, US

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L021/20

US Classification:

438 22, 438 35

Abstract:

Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.

US Patent:

7273798, Sep 25, 2007

Filed:

Aug 1, 2005

Appl. No.:

11/194237

Inventors:

Steven D. Lester - Palo Alto CA, US
Virginia M. Robbins - Los Gatos CA, US
Scott W. Corzine - Sunnyvale CA, US

Assignee:

Avago Technologies ECBU IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 21/301
H01L 21/461

US Classification:

438458, 438455

Abstract:

A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.

US Patent:

7473941, Jan 6, 2009

Filed:

Aug 15, 2005

Appl. No.:

11/203917

Inventors:

Virginia M. Robbins - Los Gatos CA, US
Steven D. Lester - Palo Alto CA, US
Jeffrey N. Miller - Los Altos Hills CA, US
David P. Bour - Cupertino CA, US

Assignee:

Avago Technologies ECBU IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 33/00

US Classification:

257102, 257104

Abstract:

A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.

US Patent:

7495314, Feb 24, 2009

Filed:

Sep 26, 2005

Appl. No.:

11/234993

Inventors:

Jeffrey N. Miller - Los Altos Hills CA, US
David P. Bour - Cupertino CA, US
Virginia M. Robbins - Los Gatos CA, US
Steven D. Lester - Palo Alto CA, US

Assignee:

Avago Technologies ECBU IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 29/22

US Classification:

257614, 257744, 257741, 257750, 257 78, 257191, 438 37

Abstract:

An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

US Patent:

7635874, Dec 22, 2009

Filed:

Sep 26, 2005

Appl. No.:

11/235592

Inventors:

Jeffrey N. Miller - Los Altos Hills CA, US
Steven D. Lester - Palo Alto CA, US
Virginia M. Robbins - Los Gatos CA, US

Assignee:

Avago Technologies ECBU IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H01L 27/15
H01L 29/22

US Classification:

257 98, 257 79, 257 99, 257E33072

Abstract:

A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.