Vladimir K Dioumaev

US Patent:

7005525, Feb 28, 2006

Filed:

Dec 9, 2003

Appl. No.:

10/731378

Inventors:

Vladimir K. Dioumaev - Coram NY, US
R. Morris Bullock - Wading River NY, US

Assignee:

Brookhaven Science Associates, LLC - Upton NY

International Classification:

C07F 11/00
C07F 7/04
C07C 29/04
B01J 31/00

US Classification:

548101, 556 59, 556470, 556482, 568809, 568814, 568881, 502152, 502155

Abstract:

Organometallic complexes are provided, which include a catalyst containing a transition metal, a ligand and a component having the formula GAr. Aris an aromatic ring system selected from phenyl, naphthalenyl, anthracenyl, fluorenyl, or indenyl. The aromatic ring system has at least a substituent selected from fluorine, hydrogen, hydrocarbyl or fluorinated hydrocarbyl, G is substituted or unsubstituted (CH)or (CF), wherein n is from 1 to 30, wherein further one or more CHor CFgroups are optionally replaced by NR, PR, SiR, BR, O or S, or R is hydrocarbyl or substituted hydrocarbyl, GArbeing covalently bonded to either said transition metal or said ligand of said catalyst, thereby rendering said cationic organometallic complex liquid. The catalyst of the organometallic complex can be [CpM(CO)(NHC)L]A, wherein M is an atom of molybdenum or tungsten, Cp is substituted or unsubstituted cyclopentadienyl radical represented by the formula [CQQQQQ], wherein Qto Qare independently selected from the group consisting of H radical, GArChydrocarbyl radical, substituted hydrocarbyl radical, substituted hydrocarbyl radical substituted by GAr, halogen radical, halogen-substituted hydrocarbyl radical, —OR, —C(O)R′, —COR′, —SiR′and —NR′R″, wherein R′ and R″ are independently selected from the group consisting of H radical, Chydrocarbyl radical, halogen radical, and halogen-substituted hydrocarbyl radical, wherein said Qto Qradicals are optionally linked to each other to form a stable bridging group, NHC is any N-heterocyclic carbene ligand, L is either any neutral electron donor ligand, wherein k is a number from 0 to 1 or L is an anionic ligand wherein k is 2, and A is an anion. Processes using the organometallic complexes as catalysts in catalytic reactions, such as for example, the hydrosilylation of aldehydes, ketones and esters are also provided.

US Patent:

7314513, Jan 1, 2008

Filed:

Sep 24, 2004

Appl. No.:

10/949013

Inventors:

Fabio Zürcher - Brisbane CA, US
Wenzhuo Guo - Cupertino CA, US
Joerg Rockenberger - Redwood City CA, US
Vladimir K. Dioumaev - Mountain View CA, US
Brent Ridley - San Carlos CA, US
Klaus Kunze - Albuquerque NM, US
James Montague Cleeves - Redwood City CA, US

Assignee:

Kovio, Inc. - Sunnyvale CA

International Classification:

C09D 183/16

US Classification:

10628714, 10618719, 2521823, 25218233, 25218235, 25218232

Abstract:

Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon. ”.

US Patent:

7485691, Feb 3, 2009

Filed:

Oct 6, 2005

Appl. No.:

11/246014

Inventors:

Wenzhuo Guo - Cupertino CA, US
Vladimir K. Dioumaev - Mountain View CA, US
Joerg Rockenberger - Redwood City CA, US
Brent Ridley - San Carlos CA, US

Assignee:

Kovio, Inc - Milpitas CA

International Classification:

C08G 77/06
C08G 77/12
C08G 77/04
C07F 7/04
C07F 7/08

US Classification:

528 17, 528 31, 528 33, 556430, 556487

Abstract:

Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)(c-AH)]—H, where each instance of A is independently Si or Ge; R is H, —AHR, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHR, the formula AHRand/or the formula c-AHRwith a catalyst of the formula RRMX(or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e. g.

US Patent:

7491782, Feb 17, 2009

Filed:

Aug 13, 2007

Appl. No.:

11/893054

Inventors:

Wenzhuo Guo - Cupertino CA, US
Vladimir K. Dioumaev - Mountain View CA, US
Joerg Rockenberger - Redwood City CA, US
Brent Ridley - San Carlos CA, US

Assignee:

Kovio, Inc. - Milpitas CA

International Classification:

C08G 77/00
C08G 77/04
C08G 77/12

US Classification:

528 10, 528 31, 528 33, 528 37, 528 43

Abstract:

Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)(c-AH)]—H, where each instance of A is independently Si or Ge; R is H, —AHR, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHR, the formula AHRand/or the formula c-AHRwith a catalyst of the formula RRMX(or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e. g.

US Patent:

7674926, Mar 9, 2010

Filed:

Oct 1, 2004

Appl. No.:

10/956714

Inventors:

Wenzhuo Guo - Cupertino CA, US
Vladimir K. Dioumaev - Mountain View CA, US
Brent Ridley - San Carlos CA, US
Joerg Rockenberger - Redwood City CA, US
James Montague Cleeves - Redwood City CA, US

Assignee:

Kovio, Inc. - Milpitas CA

International Classification:

C07F 5/02
C07F 9/02
C07F 9/30
C07F 7/02

US Classification:

556404, 556 7, 556 8, 556 19, 556 20, 556 30, 556402

Abstract:

Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.

US Patent:

7723457, May 25, 2010

Filed:

Dec 31, 2008

Appl. No.:

12/347911

Inventors:

Wenzhuo Guo - Cupertino CA, US
Vladimir K. Dioumaev - Mountain View CA, US
Joerg Rockenberger - Redwood City CA, US
Brent Ridley - San Carlos CA, US

Assignee:

Kovio, Inc. - Milpitas CA

International Classification:

C08G 77/06
C08G 77/12
C08G 77/04
C07F 7/04
C07F 7/08

US Classification:

528 31, 528 17, 528 33, 556430, 556487

Abstract:

Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H-[(AHR)(c-AH)]—H, where each instance of A is independently Si or Ge; R is H, -AHR, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHR, the formula AHRand/or the formula c-AHRwith a catalyst of the formula RRMX(or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e. g.

US Patent:

7943721, May 17, 2011

Filed:

Oct 5, 2006

Appl. No.:

11/543414

Inventors:

Vladimir K. Dioumaev - Mountain View CA, US

Assignee:

Kovio, Inc. - Milpitas CA

International Classification:

C08G 77/08

US Classification:

528 31, 528 15, 528 16, 528 17, 528 18, 528 34, 528 39

Abstract:

Methods are disclosed of making linear and cross-linked, HMW (high molecular weight) polysilanes and polygermanes, polyperhydrosilanes and polyperhydrogermanes, functional liquids containing the same, and methods of using the liquids in a range of desirable applications. The silane and germane polymers are generally composed of chains of Si and/or Ge substituted with R′ substituents, where each instance of R′ is, for example, independently hydrogen, halogen, alkenyl, alkynyl, hydrocarbyl, aromatic hydrocarbyl, heterocyclic aromatic hydrocarbyl, SiR″, GeR″, PR″, OR″, NR″, or SR″; where each instance of R″ is independently hydrogen or hydrocarbyl. The cross-linked polymers can be synthesized by dehalogenative coupling or dehydrocoupling. The linear polymers can be synthesized by ring-opening polymerization. The polymers can be further modified by halogenation and/or reaction with the source of hydride to furnish perhydrosilane and perhydrogermane polymers, which are used in liquid ink formulations.

US Patent:

7951892, May 31, 2011

Filed:

Oct 11, 2005

Appl. No.:

11/249167

Inventors:

Wenzhuo Guo - Cupertino CA, US
Vladimir K. Dioumaev - Mountain View CA, US
Joerg Rockenberger - Redwood City CA, US

Assignee:

Kovio, Inc. - Milpitas CA

International Classification:

C08G 77/00

US Classification:

528 17, 528 31, 528 43

Abstract:

Doped polysilanes, inks containing the same, and methods for their preparation and use are disclosed. The doped polysilane generally has the formula H-[AH(DR)]-[(AHR)]—H, where each instance of A is independently Si or Ge, and D is B, P, As or Sb. In preferred embodiments, R is H, -AHR, alkyl, aryl or substituted aryl, and Ris independently H, halogen, aryl or substituted aryl. In one aspect, the method of making a doped poly(aryl)silane generally includes the steps of combining a doped silane of the formula AH(DR)(optionally further including a silane of the formula AHR) with a catalyst of the formula RRMX(or an immobilized derivative thereof) to form a doped poly(aryl)silane, then removing the metal M. In another aspect, the method of making a doped polysilane includes the steps of halogenating a doped polyarylsilane, and reducing the doped halopolysilane with a metal hydride to form the doped polysilane. The synthesis of semiconductor inks via dehydrocoupling of doped silanes and/or germanes allows for tuning of the ink properties (e. g.