Wai Mo Lee

US Patent:

6367486, Apr 9, 2002

Filed:

Aug 10, 2000

Appl. No.:

09/635650

Inventors:

Wai Mun Lee - Fremont CA
Zhefei Jessie Chen - Fremont CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

B08B 304

US Classification:

134 13, 510175, 510176, 510245, 510255, 510264, 510266, 510499, 134 39, 134 40

Abstract:

An ethylenediaminetetraacetic acid or a mono-, di-, tri- or tetraammonium salt thereof residue cleaning composition removes photoresist and other residue from integrated circuit substrates. The balance of the composition is desirably made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the ethylenediaminetetraacetic acid or a mono-, di-, tri- or tetraammonium salt thereof in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

US Patent:

6399551, Jun 4, 2002

Filed:

Nov 22, 1999

Appl. No.:

09/444548

Inventors:

Wai Mun Lee - Fremont CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

C11D 732

US Classification:

510175, 510176, 510178, 510245, 510255, 510264, 510271, 510499, 510477, 510488, 134 12, 134 13, 134 39

Abstract:

A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the two carbon atom linkage alkanolamine compound in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

US Patent:

6417112, Jul 9, 2002

Filed:

Jun 30, 1999

Appl. No.:

09/343532

Inventors:

Catherine M. Peyne - Hayward CA
David J. Maloney - Livermore CA
Shihying Lee - Fremont CA
Wai Mun Lee - Fremont CA
Leslie W. Arkless - Glasgow, GB

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

H01L 21302

US Classification:

438754, 438963, 134 1

Abstract:

A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of UISI manufacturing in a dual damascene structure.

US Patent:

6492311, Dec 10, 2002

Filed:

Apr 4, 1997

Appl. No.:

08/833382

Inventors:

Wai Mun Lee - Fremont CA
Zhefei Jessie Chen - Fremont CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

C11D 732

US Classification:

510176, 510175, 510245, 510255, 510477, 510488, 510499

Abstract:

An ethylenediaminetetraacetic acid or a mono- di- tri- or tetraammonium salt thereof residue cleaning composition removes photoresist and other residue from integrated circuit substrates. The balance of the composition is desirably made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the ethylenediaminetetraacetic acid or a mono- di- tri- or tetraammonium salt thereof in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

US Patent:

6564812, May 20, 2003

Filed:

Jun 4, 2002

Appl. No.:

10/160035

Inventors:

Wai Mun Lee - Fremont CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

B08B 304

US Classification:

134 13, 134 39, 510175, 510176, 510178, 510245, 510255, 510264, 510271, 510499, 510477, 510488

Abstract:

A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the two carbon atom linkage alkanolamine compound in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

US Patent:

6566276, May 20, 2003

Filed:

Jun 6, 2001

Appl. No.:

09/875115

Inventors:

David J. Maloney - Pleasanton CA
Wai M. Lee - Fremont CA
Michael A. Fury - San Francisco CA
Ross H. Hill - Coquitlam, CA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

H01L 2131

US Classification:

438758, 430311, 430312

Abstract:

The present invention involves fabrication of a hard mask. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Another embodiment of the present invention is a method of forming an etched pattern in a substrate. A further embodiment of the present invention is a method of forming an implanted region in a substrate. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.

US Patent:

6696363, Feb 24, 2004

Filed:

Jun 6, 2001

Appl. No.:

09/874330

Inventors:

Wai M. Lee - Fremont CA
David J. Maloney - Pleasanton CA
Paul J. Roman - Pleasanton CA
Michael A. Fury - San Francisco CA
Ross H. Hill - Coquitlam, CA
Clifford Henderson - Conyers GA
Sean Barstow - Atlanta GA

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

H01L 2144

US Classification:

438681, 430312, 427100

Abstract:

The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.

US Patent:

6777380, Aug 17, 2004

Filed:

Jul 10, 2001

Appl. No.:

09/903064

Inventors:

Robert J. Small - Dublin CA
Bakul P. Patel - Pleasanton CA
Wai Mun Lee - Fremont CA
Douglas Holmes - Bridge of Weir, GB
Jerome Daviot - Glasgow, GB
Chris Reid - Glasgow, GB

Assignee:

EKC Technology, Inc. - Hayward CA

International Classification:

G03C 500

US Classification:

510176, 510175, 510245, 430329, 134 13, 252 791

Abstract:

A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0. 01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.