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Walid M Hafez

age ~44

from Portland, OR

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Also known as:
  • Walid N Hafez
  • Walid W Hafez
  • Walid Hafez Trs
  • Walid Hatez
Related to:
Connected to:

Walid Hafez Phones & Addresses

  • Portland, OR
  • 709 Green St, Urbana, IL 61801
  • Quincy, IL
  • Saint Louis, MO

Work

  • Company:
    Blessing Physician Services
  • Address:
    927 Broadway St Suite 302, Quincy, IL 62301
  • Phones:
    (217)2246423

Education

  • School / High School:
    American University of Beirut / Faculty of Medicine

Skills

Intel

Languages

English

Awards

Healthgrades Honor Roll

Ranks

  • Certificate:
    Neurology, 1979

Specialities

Sleep Medicine • Sleep Medicine Psychiatry & Neurology

Medicine Doctors

Walid Hafez Photo 1

Dr. Walid M Hafez, Quincy IL - MD (Doctor of Medicine)

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Specialties:
Sleep Medicine
Sleep Medicine Psychiatry & Neurology
Address:
Blessing Physician Services
927 Broadway St Suite 302, Quincy, IL 62301
(217)2246423 (Phone)
Procedures:
EEG (Electroencephalogram)
EMG (Electromyography)
Conditions:
Alzheimer's Disease
Ataxia
Bell's Palsy
Brachial Plexus Palsy
Brain and Nervous System Cancer (incl. Gliomas, Astrocytoma, Schwannoma, Medulloblastoma, Chordoma)
Brain Injury
Carpal Tunnel Syndrome
Cerebral Aneurysm
Cerebral Artery Thrombosis
Cerebral Vascular Disease
Cerebrovascular Disease
Chiari's Deformity
Concussion
Convulsions
Cranial Trauma
Dementia
Diabetic Polyneuropathy
Diplopia
Dystonia
Epilepsy
Essential Tremor
Gait Abnormality
Headache
Huntington's Disease
Hydrocephalus
Inflammatory and Toxic Neuropathy
Insomnia
Intervertebral Disc Herniation
Low Back Pain
Lyme Disease
Meningiomas
Migraine
Multiple Sclerosis (MS)
Muscular Dystrophy (MD)
Myasthenia Gravis
Myoclonus
Narcolepsy and Cataplexy
Nerve Sheath Tumors
Normal Pressure Hydrocephalus
Parkinsonism
Parkinson's Disease
Peripheral Nerve Disorders
Peripheral Neuropathy
Post-Concussion Syndrome
Progressive Supranuclear Palsy (PSP)
Pseudotumor Cerebri
Radiculopathy (not Due to Disc Displacement)
Reflex Sympathetic Dystrophy
Restless Legs Syndrome
Sleep Apnea
Spina Bifida
Spinal Stenosis
Stroke
Syncope
Tension Headache
Transient Ischemic Attack (TIA)
Tremor
Trigeminal Neuralgia
Tuberous Sclerosis
Vasculitis
Vertigo
Visual Field Defects
Certifications:
Neurology, 1979
Sleep Medicine, 2011
Awards:
Healthgrades Honor Roll
Languages:
English
Hospitals:
Blessing Physician Services
927 Broadway St Suite 302, Quincy, IL 62301

Blessing Hospital - 11th Street
Broadway At 11Th Street And 14Th Street, Quincy, IL 62305
Education:
Medical School
American University of Beirut / Faculty of Medicine
Medical School
Berkshire Med Center
Medical School
University Iowa Hosps and Clinics
Walid Hafez Photo 2

Walid M. Hafez

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Specialties:
Neurology
Work:
Family Medicine AssociatesBlessing Physician Services
927 Broadway St STE 302, Quincy, IL 62301
(217)2246423 (phone), (217)2215581 (fax)
Education:
Medical School
American University of Beirut, Faculty of Medicine, Beirut, Lebanon
Graduated: 1972
Procedures:
Lumbar Puncture
Neurological Testing
Sleep and EEG Testing
Conditions:
Alzheimer's Disease
Bell's Palsy
Carpel Tunnel Syndrome
Dementia
Diabetic Peripheral Neuropathy
Languages:
English
Spanish
Description:
Dr. Hafez graduated from the American University of Beirut, Faculty of Medicine, Beirut, Lebanon in 1972. He works in Quincy, IL and specializes in Neurology. Dr. Hafez is affiliated with Blessing Hospital.
Walid Hafez Photo 3

Walid Hafez, Quincy IL

Work:
Blessing Physician Services
927 Broadway St, Quincy, IL 62301
Midwest Family Medical Care
630 Locust St, Carthage, IL 62321
Walid Hafez Photo 4

Walid M Hafez, Quincy IL

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Specialties:
Neurologist
Address:
927 Broadway St, Quincy, IL 62301
Board certifications:
American Board of Psychiatry and Neurology Certification in Neurology (Psychiatry and Neurology)
American Board of Psychiatry and Neurology Sub-certificate in Sleep Medicine (Psychiatry and Neurology)

Wikipedia

Milt Feng

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In 2003, Milton Feng and his graduate students Walid Hafez and Jie-Wei Lai broke the record for the world's fastest transistor. Their device, made of indium ...

Resumes

Walid Hafez Photo 5

Walid Hafez

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Skills:
Intel
Name / Title
Company / Classification
Phones & Addresses
Walid M. Hafez
President
Walid M Hafez MD PC
Medical Doctor's Office
2305 S 24 St, Columbus, IL 62305
(217)2233636
Walid M. Hafez
Neurology
Blessing Physician Services
Medical Doctor's Office
927 Broadway St, Columbus, IL 62301
(217)2215550
Walid Mahmoud Hafez
Walid Hafez MD
Psychiatrist · Neurologist
2305 S 24 St, Quincy, IL 62305
(217)2233636

Us Patents

  • Method Of Forming Programmable Anti-Fuse Element

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  • US Patent:
    8101471, Jan 24, 2012
  • Filed:
    Dec 30, 2008
  • Appl. No.:
    12/319104
  • Inventors:
    Walid M. Hafez - Portland OR, US
    Chia-Hong Jan - Portland OR, US
    Chetan Prasad - Hillsboro OR, US
    Sangwoo Pae - Beaverton OR, US
    Zhanping Chen - Portland OR, US
    Anisur Rahman - Hillsboro OR, US
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    H01L 21/82
  • US Classification:
    438132, 438131, 438215, 438281, 257E21592
  • Abstract:
    A programmable anti-fuse element includes a substrate (), an N-well () in the substrate, an electrically insulating layer () over the N-well, and a gate electrode () over the electrically insulating layer. The gate electrode has n-type doping so that the N-well is able to substantially contain within its boundaries a current generated following a programming event of the programmable anti-fuse element. In the same or another embodiment, a twice-programmable fuse element () includes a metal gate fuse () and an oxide anti-fuse () such as the programmable anti-fuse element just described.

  • Penetrating Implant For Forming A Semiconductor Device

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  • US Patent:
    8426927, Apr 23, 2013
  • Filed:
    May 13, 2011
  • Appl. No.:
    13/107783
  • Inventors:
    Giuseppe Curello - Portland OR, US
    Ian R. Post - Portland OR, US
    Nick Lindert - Beaverton OR, US
    Walid M. Hafez - Portland OR, US
    Chia-Hong Jan - Portland OR, US
    Mark T. Bohr - Aloha OR, US
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    H01L 29/66
    H01L 21/02
  • US Classification:
    257402, 257 48, 257607, 257E29109, 257E29255
  • Abstract:
    A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.

  • Memory Cell Using Bti Effects In High-K Metal Gate Mos

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  • US Patent:
    8432751, Apr 30, 2013
  • Filed:
    Dec 22, 2010
  • Appl. No.:
    12/976630
  • Inventors:
    Walid M. Hafez - Portland OR, US
    Anisur Rahman - Hillsboro OR, US
    Chia-Hong Jan - Portland OR, US
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    G11C 7/00
  • US Classification:
    36518916, 36518915, 365189011, 36518907, 36518909, 36518503, 36518514, 36518518, 36518519, 36518521, 36518523
  • Abstract:
    Techniques and circuitry are disclosed for implementing non-volatile storage that exploit bias temperature instability (BTI) effects of high-k/metal-gate n-type or p-type metal oxide semiconductor (NMOS or PMOS) transistors. A programmed bitcell of, for example, a memory or programmable logic circuit exhibits a threshold voltage shift resulting from an applied programming bias used to program bitcells. In some cases, applying a first programming bias causes the device to have a first state, and applying a second programming bias causes the device to have a second state that is different than the first state. Programmed bitcells can be erased by applying an opposite polarity stress, and re-programmed through multiple cycles. The bitcell configuration can be used in conjunction with column/row select circuitry and/or readout circuitry, in accordance with some embodiments.

  • High-Voltage Transistor Architectures, Processes Of Forming Same, And Systems Containing Same

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  • US Patent:
    8487376, Jul 16, 2013
  • Filed:
    Aug 18, 2010
  • Appl. No.:
    12/858770
  • Inventors:
    Walid M. Hafez - Portland OR, US
    Chia-Hong Jan - Portland OR, US
    Anisur Rahman - Hillsboro OR, US
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    H01L 29/76
  • US Classification:
    257337, 257E2159, 257E2706, 257408
  • Abstract:
    An apparatus includes a first device with a metal gate and a drain well that experiences a series resistance that drops a drain contact voltage from 10 V to 4-6 V at a junction between the drain well and a channel under the gate. The apparatus includes an interlayer dielectric layer (ILD0) disposed above and on the drain well and a salicide drain contact in the drain well. The apparatus also includes a subsequent device that is located in a region different from the first device that operates at a voltage lower than the first device.

  • Methods Of Forming Secured Metal Gate Antifuse Structures

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  • US Patent:
    8618613, Dec 31, 2013
  • Filed:
    Mar 31, 2011
  • Appl. No.:
    13/077681
  • Inventors:
    Xianghong Tong - Hillsboro OR, US
    Zhanping Chen - Hillsboro OR, US
    Walid M. Hafez - Portland OR, US
    Zhiyong Ma - Hillsboro OR, US
    Sarvesh H. Kulkarni - Hillsboro OR, US
    Kevin X. Zhang - Portland OR, US
    Matthew B. Pedersen - Beaverton OR, US
    Kevin D. Johnson - Hillsboro OR, US
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    H01L 27/11
    H01L 21/02
    H01L 23/52
  • US Classification:
    257379, 257408, 257529, 257530
  • Abstract:
    Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

  • Light Emitting Device And Method

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  • US Patent:
    20050040432, Feb 24, 2005
  • Filed:
    Aug 22, 2003
  • Appl. No.:
    10/646457
  • Inventors:
    Milton Feng - Champaign IL, US
    Nick Holonyak - Urbana IL, US
    Walid Hafez - Champaign IL, US
  • International Classification:
    H01L031/0328
  • US Classification:
    257198000
  • Abstract:
    A method for producing controllable light emission from a semiconductor device includes the following steps: providing a heterojunction bipolar transistor device that includes collector, base, and emitter regions; and applying electrical signals across terminals coupled with the collector, base, and emitter regions to cause light emission by radiative recombination in the base region. In a disclosed embodiment, the step of applying electrical signals includes applying a collector-to-emitter voltage and modulating light output by applying a modulating base current.

  • Multi-Gate Transistor With Strained Body

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  • US Patent:
    20090001415, Jan 1, 2009
  • Filed:
    Jun 30, 2007
  • Appl. No.:
    11/772199
  • Inventors:
    Nick Lindert - Beaverton OR, US
    Walid Mac Hafez - Portland OR, US
  • International Classification:
    H01L 29/778
    H01L 21/335
  • US Classification:
    257190, 438164, 257E21403, 257E29246
  • Abstract:
    A semiconductor device comprises a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate, wherein the semiconductor body comprises a silicon alloy core having a top surface and laterally opposite sidewalls formed on a silicon fin structure, and a silicon shell layer formed on the top surface and the laterally opposite sidewalls of the silicon alloy core, wherein the silicon alloy core imparts a strain on the silicon shell layer. The semiconductor device further comprises a gate dielectric layer formed on the top surface and the laterally opposite sidewalls of the semiconductor body and a gate electrode formed on the gate dielectric layer.

  • Penetrating Implant For Forming A Semiconductor Device

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  • US Patent:
    20090242998, Oct 1, 2009
  • Filed:
    Mar 31, 2008
  • Appl. No.:
    12/059455
  • Inventors:
    Giuseppe Curello - Portland OR, US
    Ian R. Post - Portland OR, US
    Nick Lindert - Beaverton OR, US
    Walid M. Hafez - Portland OR, US
    Chia-Hong Jan - Portland OR, US
    Mark T. Bohr - Aloha OR, US
  • International Classification:
    H01L 29/78
    H01L 21/336
    H01L 21/8234
  • US Classification:
    257409, 438294, 438275, 257E29019, 257E29255, 257E21433, 257E21628
  • Abstract:
    A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.

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Walid Hafez Photo 6

Walid Hafez

Walid Hafez Photo 7

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Walid Hafez Photo 8

Walid Hafez

Walid Hafez Photo 9

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Walid Hafez Photo 10

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Walid Hafez Photo 11

Walid Hafez

Youtube

walid halim.wmv

walid halim.wmv

, , , , Abdel halim Hafez , walid mouneir , balash el etab ,...

  • Category:
    Music
  • Uploaded:
    24 Oct, 2010
  • Duration:
    7m 20s

Mohamed Hafez Palestine Talk [1 of 9]

Mohamed Hafez Palestine Talk [1 of 9]

Mohamed Hafez, who recently returned from 6 months in the West Bank af...

  • Category:
    Nonprofits & Activism
  • Uploaded:
    21 May, 2010
  • Duration:
    8m 46s

Matloub 7ob Jdeed

Matloub 7ob Jdeed

,Abdallah Rwaished Abdel Halim Hafez Abeer Foda Adam Matloub 7ob ...

  • Category:
    Music
  • Uploaded:
    05 Apr, 2010
  • Duration:
    52s

Laura Khalil 2011 Allah la ye7remni minnak ...

Laura Khalil 2011 Allah la ye7remni minnak -

Enjoy - forbidden love arab arabe agram haifa hayfa 3agra...

  • Category:
    Music
  • Uploaded:
    06 Feb, 2011
  • Duration:
    3m 49s

Walid jumblat attacking the LF and FM

Walid jumblat attacking the LF and FM

Walid jumblat the PSP leader attacking his allies headed by Samir Geag...

  • Category:
    News & Politics
  • Uploaded:
    18 Apr, 2009
  • Duration:
    4m

Interview with Walid Hafez, CEO, Ceramed Trad...

Interview with Walid Hafez, CEO, Ceramed Trading D...

Interview with Walid Hafez, CEO, Ceramed Trading DMCC at Mining Invest...

  • Duration:
    7m 6s

The Professional Posture Program by Walid Haf...

The Professional Posture Program by Walid Hafez, Z...

IF YOU WORK AT A DESK AND USE A COMPUTER OR SMARTPHONE, CHANCES ARE YO...

  • Duration:
    53s

: 2022 ,

: 2022 ,
  • Duration:
    18m 43s

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Walid Abdel Hafez

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