Walt Deborah De

US Patent:

8460764, Jun 11, 2013

Filed:

Mar 4, 2009

Appl. No.:

12/397894

Inventors:

Walt A. de Heer - Atlanta GA, US
Xuebin Li - Santa Clara CA, US
Michael Sprinkle - Mableton GA, US

Assignee:

Georgia Tech Research Corporation - Atlanta GA

International Classification:

C23C 14/28
H05B 6/00

US Classification:

427595, 427591

Abstract:

In a method of producing ultra-thin graphitic layers, a carbide crystal is placed into a graphitic enclosure. The carbide crystal and the graphitic enclosure are placed into a chamber. The carbide crystal and the graphitic enclosure are subjected to a predetermined environment. Once the predetermined environment is established, the carbide crystal and the graphitic enclosure are heated to a first temperature for a predetermined period of time sufficient to cause at least one non-carbon element to evaporate from a crystal face of the carbide crystal so as to form at least one graphitic layer on the crystal face of the carbide crystal.

US Patent:

8468611, Jun 18, 2013

Filed:

Jun 1, 2010

Appl. No.:

12/791466

Inventors:

Elisa Riedo - Atlanta GA, US
Seth R. Marder - Atlanta GA, US
Walt A. de Heer - Atlanta GA, US
Vamsi K. Kodali - Visakhapatnam, IN
Simon C. Jones - Los Angeles CA, US
Takashi Okada - Mie, JP
Debin Wang - Atlanta GA, US
Jennifer E. Curtis - Atlanta GA, US
Clifford L. Henderson - Douglasville GA, US
Yueming Hua - Sunnyvale CA, US

Assignee:

Georgia Tech Research Corporation - Atlanta GA

International Classification:

G01Q 60/24
G01Q 60/38

US Classification:

850 33, 850 1, 850 40, 850 41, 850 42, 427226, 427227, 427591

Abstract:

Improved nanolithography components, systems, and methods are described herein. The systems and methods generally employ a resistively heated atomic force microscope tip to thermally induce a chemical change in a surface. In addition, certain polymeric compositions are also disclosed.

US Patent:

20090236608, Sep 24, 2009

Filed:

Jul 1, 2008

Appl. No.:

12/165837

Inventors:

Walt A. de Heer - Atlanta GA, US
Phillip N. First - Doraville GA, US

Assignee:

GEORGIA TECH RESEARCH CORPORATION - Atlanta GA

International Classification:

H01L 21/3065
B32B 3/30
H01L 29/24

US Classification:

257 77, 428119, 438712, 257E21218, 257E29104

Abstract:

In a method of making a vertical graphitic path on a silicon carbide crystal having a horizontal surface, a portion of the silicon carbide crystal is removed from the horizontal surface so as to define a vertical surface that is transverse to the horizontal surface of the silicon carbide crystal. The vertical surface is annealed so as to generate a thin-film graphitic layer on the vertical surface. In another method of making graphitic layers, a material that inhibits formation of a graphitic layer when the silicon carbide crystal is annealed is applied to a surface of a silicon carbide crystal so as to define at least one opening that exposes a portion of the surface of the silicon carbide crystal. The portion of the silicon carbide crystal is annealed so as to generate a thin-film graphitic layer in the portion of the silicon carbide crystal.

US Patent:

20090236609, Sep 24, 2009

Filed:

Sep 30, 2008

Appl. No.:

12/241555

Inventors:

Walt A. de Heer - Atlanta GA, US
Xiaosong Wu - Atlanta GA, US
Michael Sprinkle - Mableton GA, US
Claire Berger - Atlanta GA, US

Assignee:

GEORGIA TECH RESEARCH CORPORATION - Atlanta GA

International Classification:

H01L 29/24
H01L 21/31
H01L 21/311

US Classification:

257 77, 438694, 438765, 257E291, 257E2124, 257E21249

Abstract:

In a method of making a functionalized graphitic structure, a portion of a multi-layered graphene surface extending from a silicon carbide substrate is exposed to an acidic environment so as to separate graphene layers in a portion of the multi-layered graphene surface. The portion of the multi-layered graphene surface is exposed to a functionalizing material that binds to carbon atoms in the graphene sheets so that the functionalizing material remains between the graphene sheets, thereby generating a functionalized graphitic structure. The functionalized graphitic structure is dried in an inert environment.

US Patent:

20140061912, Mar 6, 2014

Filed:

Mar 16, 2012

Appl. No.:

14/002420

Inventors:

Walt A. De Heer - Atlanta GA, US

International Classification:

H01L 21/768
H01L 23/532
H01L 23/522

US Classification:

257744, 438602

Abstract:

In a method for making graphitic ribbons in a face of a carbide crystal (), in which an elongated trench () is formed along a predetermined path in the face () of the carbide crystal (), the trench () including a horizontal floor () coupling two vertical walls (), the trench () following a path on which it is desired to form a graphitic ribbon (). The carbide crystal () and the trench () are subjected to an annealing environment for an amount of time sufficient to cause a graphene ribbon () having a V-shaped cross section to form along the predetermined path of the trench ().

US Patent:

20140361250, Dec 11, 2014

Filed:

Sep 26, 2012

Appl. No.:

14/345093

Inventors:

Walt A. de Heer - Atlanta GA, US

Assignee:

GEORGIA TECH RESEARCH CORPORATION - Atlanta GA

International Classification:

H01L 29/16
H01L 29/417
H01L 29/78
H01L 29/66
H01L 21/02
H01L 29/165

US Classification:

257 27, 438300

Abstract:

A transistor includes a silicon carbide crystal () having a silicon terminated face (). A semiconducting-type graphene layer () is bonded to the silicon terminated face (). A first semimetallic-type graphene layer () is contiguous with a first portion of the semiconducting-type graphene layer (). A second semimetallic-type graphene layer () is contiguous with a second portion of the semiconducting-type graphene layer () that is spaced apart from the first portion. An insulator layer () is disposed on a portion of the semiconducting-type graphene layer (). A gate conductive layer () disposed on the insulator layer () and spaced apart from the semiconducting-type graphene layer ().