Walter Benjamin Glenn

US Patent:

6866746, Mar 15, 2005

Filed:

Nov 21, 2002

Appl. No.:

10/302774

Inventors:

Lawrence C. Lei - Milpitas CA, US
Alfred W. Mak - Union City CA, US
Avi Tepman - Cupertino CA, US
Ming Xi - Sunnyvale CA, US
Walter Benjamin Glenn - Pacifica CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C016/00
C23F001/00
H01L021/306

US Classification:

15634529, 118715, 118733

Abstract:

Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly.

US Patent:

6932871, Aug 23, 2005

Filed:

Apr 16, 2002

Appl. No.:

10/124309

Inventors:

Mei Chang - Saratoga CA, US
Lawrence C. Lei - Milpitas CA, US
Walter B. Glenn - Pacifica CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C014/24

US Classification:

118719, 118724, 118725, 118728, 118730, 15634534, 15634555

Abstract:

A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

US Patent:

6974771, Dec 13, 2005

Filed:

Jul 20, 2004

Appl. No.:

10/894774

Inventors:

Fusen Chen - Saratoga CA, US
Ling Chen - Sunnyvale CA, US
Walter Benjamin Glenn - Pacifica CA, US
Praburam Gopalraja - San Jose CA, US
Jianming Fu - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L021/44
H01L021/4763
H01L021/302
H01L021/461
C23C016/00

US Classification:

438637, 438672, 438676, 438692, 118715, 118723 R, 118723 CB, 118723 I, 15634535, 15634548

Abstract:

In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

US Patent:

7175713, Feb 13, 2007

Filed:

Jan 27, 2003

Appl. No.:

10/352257

Inventors:

Randhir P. S. Thakur - San Jose CA, US
Alfred W. Mak - Union City CA, US
Ming Xi - Palo Alto CA, US
Walter Benjamin Glenn - Pacifica CA, US
Ahmad A. Khan - Milpitas CA, US
Ayad A. Al-Shaikh - Santa Clara CA, US
Avgerinos V. Gelatos - Redwood City CA, US
Salvador P. Umotoy - Antioch CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
C23C 16/503
C23C 16/505
C23C 16/50
C23F 1/00
H01L 21/306

US Classification:

118715, 15634529, 118723 R

Abstract:

An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

US Patent:

7547465, Jun 16, 2009

Filed:

Aug 5, 2005

Appl. No.:

11/198140

Inventors:

Mei Chang - Saratoga CA, US
Lawrence C. Lei - Milpitas CA, US
Walter B. Glenn - Pacifica CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00

US Classification:

4272555, 427251, 4272481, 118719, 118720

Abstract:

A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

US Patent:

7547644, Jun 16, 2009

Filed:

Nov 1, 2005

Appl. No.:

11/264517

Inventors:

Fusen Chen - Saratoga CA, US
Ling Chen - Sunnyvale CA, US
Walter Benjamin Glenn - Pacifica CA, US
Praburam Gopalraja - San Jose CA, US
Jianming Fu - Palo Alto CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31
C23C 16/00

US Classification:

438758, 118719

Abstract:

In a first aspect, a method is provided that includes () forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; () removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and () depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

US Patent:

7794789, Sep 14, 2010

Filed:

May 5, 2009

Appl. No.:

12/435950

Inventors:

Mei Chang - Saratoga CA, US
Lawrence C. Lei - Milpitas CA, US
Walter B. Glenn - Pacifica CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00

US Classification:

4272555, 427251, 4272481

Abstract:

A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

US Patent:

7923069, Apr 12, 2011

Filed:

Aug 20, 2010

Appl. No.:

12/860542

Inventors:

Mei Chang - Saratoga CA, US
Lawrence C. Lei - Milpitas CA, US
Walter B. Glenn - Pacifica CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00

US Classification:

4272481, 42725528, 427251, 4272555

Abstract:

A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.