Walter L Hales

US Patent:

50417797, Aug 20, 1991

Filed:

Aug 17, 1990

Appl. No.:

7/570926

Inventors:

Walter L. Hales - Huntsville AL

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

G01R 3100
H01S 310

US Classification:

324 96

Abstract:

Utilizing the property of electro-optic crystal which changes its index of refraction in the presence of electric field, such a crystal is placed inside the resonant cavity of a Fabry-Perot type interferometer. Laser light travelling through the cavity and the crystal experiences modified optical path length in the presence of electric field. The fringe pattern at the focal plane is observed and used to detect and measure the ambient electric field.

US Patent:

H2127, Feb 3, 1987

Filed:

Dec 27, 1984

Appl. No.:

6/686767

Inventors:

James D. Holder - Huntsville AL
Walter L. Hales - Huntsville AL

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

G01B 1102

US Classification:

356356

Abstract:

Apparatus for measuring force and displacement by measuring Moire fringe fts in response to relative movement between a pair of mirrors which reflect light beams therefrom to an interaction region. A pair of electro-optical sensors is positioned to view the interference region and detect fringe shifts responsive to relative movement between the mirrors.

US Patent:

49539817, Sep 4, 1990

Filed:

Aug 3, 1989

Appl. No.:

7/389136

Inventors:

Walter L. Hales - Huntsville AL

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

G01B 902

US Classification:

356353

Abstract:

A lateral-shearing electro-optic field sensor in which a lateral-shearing terferometer is used in conjunction with an electro-optic crystal and a coherent light source to measure the waveform of an electro-magnetic pulse or a microwave pulse in free space. Depending on the size of the electro-optic crystal used, the device is adapted to measure frequencies as high as 20 GHz.