Walter R Lamb

US Patent:

53743172, Dec 20, 1994

Filed:

Mar 23, 1993

Appl. No.:

8/035914

Inventors:

Walter Lamb - Sunnyvale CA
John Lawrence - Cupertino CA

Assignee:

Energy Systems Solar, Incorporated - Sunnyvale CA

International Classification:

H01L 31052
H01L 31058

US Classification:

136246

Abstract:

Disclosed is a solar electric power system that utilizes multiple reflectors to concentrate sun light onto a panel of photovoltaic (PV) cells. The power system, consisting of multiple reflectors, mounted PV cells, and a heat dissipation component, is mounted on a tracker that keeps the system directed to the sun. A noteworthy feature of this system is its designed-in capability of being retrofitted with advanced reflectors, PV components, and heat dissipation components during the system's multi-year operating life. The common axes design feature of the system allows for low cost materials and manufacturing concepts. The system can operate on either a single or a dual axis tracker with active or passive cooling.

US Patent:

50117823, Apr 30, 1991

Filed:

Mar 31, 1989

Appl. No.:

7/332287

Inventors:

Walter R. Lamb - Sunnyvale CA
Darrell Griffin - Stratford CA

Assignee:

Electric Power Research Institute - Palo Alto CA

International Classification:

H01L 3118

US Classification:

437 2

Abstract:

The performance of a silicon photovoltaic cell is improved while process yield is maintained by first forming doped regions in a major surface of a silicon wafer and providing electrical interconnections to the doped regions prior to thinning the wafer by etching another major surface of the wafer. A passivating antireflection layer is applied to the etched surface after the surface is precleaned. The precleaning can be by ammonia plasma applied in situ as a precursor to depositing silicon nitride as the passivation layer.

US Patent:

49180304, Apr 17, 1990

Filed:

Mar 31, 1989

Appl. No.:

7/332286

Inventors:

Walter R. Lamb - Sunnyvale CA
John E. Lawrence - Cupertino CA

Assignee:

Electric Power Research Institute - Palo Alto CA

International Classification:

H01L 3118

US Classification:

437225

Abstract:

An improved textured surface of a photovoltaic device is provided by an anisotropic etching process in which pyramidal structures are formed on a silicon surface having a (100) crystallographic orientation. An aqueous solution of an alkali metal hydroxide is heated to approximately 85. degree. C. whereupon isopropyl alcohol is added. Separated silicon wafers are immersed in the solution for approximately 45 minutes. The wafers can be agitated for a limited time in the solution, and preferably the wafers and solution are covered during the etching step. The resulting pyramids are on the order of 14 microns high and 20 microns on each side of the base. The overlap of the pyramids provides desired random locations for the pyramids.