Wei Living Ma from 5500 Beech Ave, Bethesda, MD 20814, age 56

Medicine Doctors

Dr. Wei W Ma, Edison NJ - MD (Doctor of Medicine)

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Specialties:

Epilepsy
Clinical Neurophysiology
Neuromuscular Medicine

Address:

JFK Neuroscience Institute
65 James St, Edison, NJ 08820
(732)3217950 (Phone)

Certifications:

Clinical Neurophysiology, 2009
Neurology, 2003
Neuromuscular Medicine, 2011

Awards:

Healthgrades Honor Roll

Languages:

English
Chinese
Mandarin

Education:

Medical School
Beijing Medical University
Graduated: 1983
Medical School
Seton Hall University School Graduate Medical Education
Graduated: 1999
Medical School
Seton Hall University School Graduate Medical Education
Graduated: 2002
Medical School
Seton Hall University School Graduate Medical Education
Graduated: 2003

Wei W. Ma

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Specialties:

Neurology, Epileptologist

Work:

John F Kennedy Neuroscience Institute
65 James St, Edison, NJ 08820
(732)3217010 (phone), (732)6321584 (fax)

Education:

Medical School
Beijing Med Univ, Beijing City, Beijing, China
Graduated: 1983

Procedures:

Hearing Evaluation
Lumbar Puncture
Neurological Testing
Sleep and EEG Testing

Conditions:

Alzheimer's Disease
Anemia
Anxiety Phobic Disorders
Attention Deficit Disorder (ADD)
Autism

Languages:

Chinese
English
Russian
Spanish

Description:

Dr. Ma graduated from the Beijing Med Univ, Beijing City, Beijing, China in 1983. She works in Edison, NJ and specializes in Neurology and Epileptologist. Dr. Ma is affiliated with John F Kennedy Medical Center.

Wei Wei Ma, Edison NJ

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Specialties:

Neurology
Clinical Neurophysiology
Neuromuscular Medicine

Work:

John F Kennedy Medical Center
65 James St, Edison, NJ 08820
John F Kennedy Medical Center
80 James St, Edison, NJ 08820

Education:

Beijing School Of Medicine (1983)

Wei Wei Ma, Edison NJ

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Specialties:

Neurologist

Address:

65 James St, Edison, NJ 08820

Board certifications:

American Board of Psychiatry and Neurology Certification in Neurology (Psychiatry and Neurology)
American Board of Psychiatry and Neurology Sub-certificate in Clinical Neurophysiology (Psychiatry and Neurology)
American Board of Psychiatry and Neurology Sub-certificate in Neuromuscular Medicine (Psychiatry and Neurology)

Name / Title

Company / Classification

Phones & Addresses

Wei Ma
Principal

The Mountwealth Group LLC
Business Services

1480 Us Hwy 46, Parsippany, NJ 07054

Wei Wei Ma

Wei Ma MD
Neurologist · Pediatric Neurologist

65 James St, Edison, NJ 08820
(732)3217010

Wei W. Ma
Neurology

J F K Johnson Rehabilition Institute
Rehabilitation Center

65 James St, Edison, NJ 08820
PO Box 3059, Edison, NJ 08818
(732)3217070

Resumes

Supervisory Computer Scientist

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Location:

Bethesda, MD

Industry:

Libraries

Work:

National Library of Medicine
Supervisory Computer Scientist

Skills:

Molecular Biology

Software Manager

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Industry:

Semiconductors

Work:

Aviza Technology
Software Manager

Wei Ma

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Wei Ma

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Work:

National Institutes of Health
Applications Br Chief
Office of Computer and Communications Sy
Applications Branch Chief
Nlm
Software Support Section Head, Department of Healt

Wei Ma

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Location:

United States

Us Patents

Additional Spacer For Self-Aligned Contact For Only High Voltage Finfets
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US Patent:

20200321332, Oct 8, 2020
Filed:

Apr 5, 2019
Appl. No.:

16/376234
Inventors:

- Grand Cayman KY, US
Christopher D. Sheraw - Severn MD, US
Wei Ma - Clifton Park NY, US
Kai Zhao - Latham NY, US
Bala S. Haran - Watervliet NY, US
International Classification:

H01L 27/088
H01L 21/8234
H01L 29/78
H01L 29/66
H01L 21/3065
Abstract:

A method includes forming a first region including a pair of first FinFETs and a second region including a pair of second FinFETs on a substrate. Each FinFET includes a metal gate having a first spacer adjacent thereto, and each first FinFET has a gate dielectric that is thicker than a gate dielectric of each second FinFET, such that the first FinFETs can be higher voltage input/output devices. The method forms a first contact between the metal gates of the pair of first FinFETs with a second spacer thereabout, the second spacer contacting a portion of each first spacer. The second spacer thus has a portion extending parallel to the metal gates, and a portion extending perpendicular to the metal gates. A second contact is formed between the metal gates of the pair of second FinFETs, and the second contact devoid of the second spacer.