Wei W Ma from 6300 Stevenson Ave, Alexandria, VA 22304, Phone: (703)5046905

Medicine Doctors

Wei W. Ma

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Specialties:

Neurology, Epileptologist

Work:

John F Kennedy Neuroscience Institute
65 James St, Edison, NJ 08820
(732)3217010 (phone), (732)6321584 (fax)

Education:

Medical School
Beijing Med Univ, Beijing City, Beijing, China
Graduated: 1983

Procedures:

Hearing Evaluation
Lumbar Puncture
Neurological Testing
Sleep and EEG Testing

Conditions:

Alzheimer's Disease
Anemia
Anxiety Phobic Disorders
Attention Deficit Disorder (ADD)
Autism

Languages:

Chinese
English
Russian
Spanish

Description:

Dr. Ma graduated from the Beijing Med Univ, Beijing City, Beijing, China in 1983. She works in Edison, NJ and specializes in Neurology and Epileptologist. Dr. Ma is affiliated with John F Kennedy Medical Center.

Resumes

Software Manager

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Industry:

Semiconductors

Work:

Aviza Technology
Software Manager

Wei Ma

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Wei Ma

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Location:

United States

License Records

Wei Li Ma

Phone:

(401)7873118 (Work)

License #:

FMC02228 - Active

Category:

Food Safety

Issued Date:

Apr 11, 1995

Expiration Date:

Jan 31, 2019

Type:

Certified Food Safety Mgr

Us Patents

Additional Spacer For Self-Aligned Contact For Only High Voltage Finfets
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US Patent:

20200321332, Oct 8, 2020
Filed:

Apr 5, 2019
Appl. No.:

16/376234
Inventors:

- Grand Cayman KY, US
Christopher D. Sheraw - Severn MD, US
Wei Ma - Clifton Park NY, US
Kai Zhao - Latham NY, US
Bala S. Haran - Watervliet NY, US
International Classification:

H01L 27/088
H01L 21/8234
H01L 29/78
H01L 29/66
H01L 21/3065
Abstract:

A method includes forming a first region including a pair of first FinFETs and a second region including a pair of second FinFETs on a substrate. Each FinFET includes a metal gate having a first spacer adjacent thereto, and each first FinFET has a gate dielectric that is thicker than a gate dielectric of each second FinFET, such that the first FinFETs can be higher voltage input/output devices. The method forms a first contact between the metal gates of the pair of first FinFETs with a second spacer thereabout, the second spacer contacting a portion of each first spacer. The second spacer thus has a portion extending parallel to the metal gates, and a portion extending perpendicular to the metal gates. A second contact is formed between the metal gates of the pair of second FinFETs, and the second contact devoid of the second spacer.