Wei Ling Wang

US Patent:

6352629, Mar 5, 2002

Filed:

Jul 10, 2000

Appl. No.:

09/612861

Inventors:

Wei Wang - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1434

US Classification:

2042982, 20429816

Abstract:

A magnetron sputter reactor capable of ionizing 15% or more of the metal atoms sputtered from the target. A small magnetron having closed bands of opposed magnetic polarity is rotated about the center of the target, and a large amount of power is applied to the target. Thereby the effective power density determined by the magnetron area is increased. A DC coil is wrapped around the space between the target and the substrate being sputter coated to generate an axial magnetic field to guide the metal ions towards the substrate. The pedestal electrode supporting the substrate may be negatively biased to accelerate the metal ions to deep within high aspect-ratio holes.

US Patent:

6358376, Mar 19, 2002

Filed:

Jul 10, 2000

Appl. No.:

09/613880

Inventors:

Wei Wang - Santa Clara CA
Jianming Fu - San Jose CA
Praburam Gopalraja - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1435

US Classification:

20419212, 20429806, 20429808, 20429811, 20429814, 20429819, 2042982

Abstract:

A magnetron sputter reactor and its method of operation which produces a high fraction of sputtered metal ions and in which the metal ions are confined by a positively biased shield and attracted to a negatively biased pedestal electrode supporting the wafer to be sputter coated. The shield may be positively biased to between 10 and 50VDC, preferably between 15 and 40VDC while the negative self-bias on the pedestal is typical tens of volts. A grounded shield is positioned between the target and the biased shield.

US Patent:

6391452, May 21, 2002

Filed:

Jul 17, 1998

Appl. No.:

09/118463

Inventors:

Kris P. Antonsen - Berkeley CA
Rajiv Nayar - Richmond CA
Wei Wang - Alameda CA
Margaret Caudle - Alameda CA
Michael A. Shearer - Fairfield CA
Neville M. Concessio - San Francisco CA

Assignee:

Bayer Corporation - Pittsburgh PA

International Classification:

B32B 1502

US Classification:

4284022, 4272133, 42721331, 42721335, 264 41, 264 43, 264 46

Abstract:

The present invention relates to pharmaceutical compositions for delivery of drugs intended to reside in the nose, compositions for nasal administration of drugs, e. g. , antiviral agents, and particularly antiviral agents comprising the human major rhinovirus receptor, also known as intercellular adhesion molecule-1 (ICAM-1); to methods of making said nasal drug compositions, and to an improved process for the removal of residual solvent from pharmaceutical matrices.

US Patent:

6413382, Jul 2, 2002

Filed:

Nov 3, 2000

Appl. No.:

09/705324

Inventors:

Wei Wang - Santa Clara CA
Praburam Gopalraja - Sunnyvale CA
Jianming Fu - San Jose CA
Zheng Xu - Foster City CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1435

US Classification:

20419212, 20429808, 20429817, 2042982, 20429822

Abstract:

A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during the pulse adjacent to the area of the magnetron. The power pulsing frequency needs to be desynchronized from the rotation frequency so that the magnetron does not overlie the same area of the magnetron during different pulses. Advantageously, the power pulses are delivered above a DC background level sufficient to continue to excite the plasma so that no ignition is required for each pulse.

US Patent:

6436251, Aug 20, 2002

Filed:

May 11, 2001

Appl. No.:

09/854281

Inventors:

Praburam Gopalraja - Sunnyvale CA
Jianming Fu - San Jose CA
Wei Wang - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1435

US Classification:

20429812, 20429817, 2042982, 20429822

Abstract:

A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. The nested magnets are rotated along the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

US Patent:

6451177, Sep 17, 2002

Filed:

Nov 1, 2000

Appl. No.:

09/703601

Inventors:

Praburam Gopalraja - Sunnyvale CA
Jianming Fu - San Jose CA
Fusen Chen - Saratoga CA
Girish Dixit - San Jose CA
Zheng Xu - Foster City CA
Wei Wang - Santa Clara CA
Ashok K. Sinha - Palo Alto CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1435

US Classification:

20419212, 2042982, 20429822, 20429812, 205205

Abstract:

A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

US Patent:

6461483, Oct 8, 2002

Filed:

Mar 10, 2000

Appl. No.:

09/523333

Inventors:

Praburam Gopalraja - Sunnyvale CA
Bradley O. Stimson - San Jose CA
John C. Forster - San Francisco CA
Wei Wang - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1432

US Classification:

20419212, 20419217, 20429823, 20429829, 20429806, 20429807, 20429808

Abstract:

A method and apparatus that operates at a high pressure of at least one torr for improving sidewall coverage within trenches and vias in a substrate. The apparatus comprises a chamber enclosing a target and a pedestal, a process gas that provides a process gas in the chamber, a pump for maintaining the high pressure of at least about one torr in the chamber and a power source coupled to the target. Additionally, the distance between the target and the substrate is set to ensure that collisions between the sputtered particles and the plasma occur in the trenches and vias on the substrate. The method comprises the steps of providing a process gas into the chamber such that the gas pressure is at least about one torr, generating a plasma from the process gas, and sputtering material from the target.

US Patent:

6485618, Nov 26, 2002

Filed:

Jul 30, 2001

Appl. No.:

09/917985

Inventors:

Praburam Gopalraja - Sunnyvale CA
Jianming Fu - San Jose CA
Fusen Chen - Saratoga CA
Girish Dixit - San Jose CA
Zheng Xu - Foster City CA
Sankaram Athreya - Sunnyvale CA
Wei D. Wang - Santa Clara CA
Ashok K. Sinha - Palo Alto CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1434

US Classification:

20419217, 20419215, 20419232, 20419235, 20419212, 438675, 438678, 438687, 205205, 205215, 427588

Abstract:

A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.