Wei Zhang

US Patent:

8421045, Apr 16, 2013

Filed:

Aug 26, 2011

Appl. No.:

13/218869

Inventors:

Daniel Qi Tan - Rexford NY, US
Patricia Chapman Irwin - Altamont NY, US
Wei Zhang - Ballston Lake NY, US

Assignee:

BHA Group, Inc. - Kansas City MO

International Classification:

G21F 3/02
H01J 29/46
H01J 5/18

US Classification:

2505161, 2505191

Abstract:

An article for providing protection from electromagnetic energy, and an associated method for provision of such. The article includes conductive fibers extending within the article, varistor material dispersed and secured within the article, and ferrite material dispersed and secured within the article.

US Patent:

20090142590, Jun 4, 2009

Filed:

Dec 22, 2008

Appl. No.:

12/340795

Inventors:

Daniel Qi Tan - Rexford NY, US
Darren Michael Stohr - Schenectady NY, US
Wei Zhang - Troy NY, US

Assignee:

GENERAL ELECTRIC COMPANY - SCHENECTADY NY

International Classification:

C04B 35/10
C04B 35/14
C04B 35/453
B32B 5/00

US Classification:

428336, 501114, 501112, 501117, 501127, 501132, 501133

Abstract:

A method includes contacting a transition metal oxide, a sintering additive, and a grain growth inhibitor additive to form a mixture. The transition metal oxide include particles that have an average diameter less than about 1 micrometer and sintering the mixture to a temperature profile that is sufficiently high that a sintered mass is formed from the mixture. The sintering includes at least one of a microwave sintering or a spark plasma sintering. The thermal profile is less than about 1050 degrees Celsius.

US Patent:

20220298673, Sep 22, 2022

Filed:

Mar 22, 2022

Appl. No.:

17/700746

Inventors:

- Fremont CA, US
Rajaram Shetty - Niskayuna NY, US
Wei Zhang - Fremont CA, US

International Classification:

C30B 29/42
C30B 11/00
H01L 21/02

Abstract:

Methods and wafers for vertical gradient freeze 8 inch gallium arsenide (GaAs) substrates. In disclosed examples, vertical gradient freeze systems for forming gallium arsenide (GaAs) substrates having silicon as a dopant, the system includes a crucible to contain a GaAs liquid melt and seed material during a formation process; one or more heating coils arranged in a plurality of heating zones; and a pedestal to move relative to the crucible, the system operable to control heating of the plurality of heating zones and movement of the pedestal to form a single crystal GaAs substrate.

US Patent:

20210273547, Sep 2, 2021

Filed:

Jun 27, 2018

Appl. No.:

17/254375

Inventors:

- Schenectady NY, US
Wei Zhang - Ballston Lake NY, US
Mark Ernest Vermilyea - Niskayuna NY, US
James William Bray - Niskayuna NY, US
Siddharth Navinchandra Ashar - Niskayuna NY, US
Hendrik Pieter Jacobus de Bock - Clifton Park NY, US
Weijun Yin - Niskayuna NY, US
Alexander Kagan - Guilderland NY, US
Anoop Jassal - Schenectady NY, US
Joseph John Zierer - Niskayuna NY, US
Rammohan Rao Kalluri - Munchen, DE

International Classification:

H02K 55/04
H02K 3/24
H02K 7/18
H02K 11/01
H02K 11/20
F03D 15/00
F03D 9/25
F03D 80/60

Abstract:

An armature is presented. The armature includes an armature winding having a plurality of coils, wherein each coil of the plurality of coils is spaced apart from adjacent coils and comprise includes a first side portion and a second side portion. The armature further includes a first electrically insulating winding enclosure. Furthermore, the armature includes a second electrically insulating winding enclosure disposed at a radial distance from the first electrically insulating winding enclosure, wherein the armature winding is disposed between the first electrically insulating winding enclosure and the second electrically insulating winding enclosure. Moreover, the armature includes an electrically insulating coil side separator disposed between the first side portion and the second side portion of the plurality of coils of the armature winding. A superconducting generator including the armature and a wind turbine having such superconducting generator are also presented.

US Patent:

20200283441, Sep 10, 2020

Filed:

May 18, 2020

Appl. No.:

16/877254

Inventors:

- Boston MA, US
- Bethesda MD, US
William D. Paquette - Amsterdam NY, US
Wei Zhang - Sharon MA, US
Juan Marugan - Gaithersburg MD, US

International Classification:

C07D 473/34
C07D 405/12
C07D 417/12
C07D 471/04
C07D 487/04
C07D 495/04
C07D 513/04
C07D 473/16
A61P 25/28

Abstract:

Provided herein are compounds useful for improving mRNA splicing in a cell. Exemplary compounds provided herein are useful for improving mRNA splicing in genes comprising at least one exon ending in the nucleotide sequence CAA. Methods for preparing the compounds and methods of treating diseases of the central nervous system are also provided.

US Patent:

20200127519, Apr 23, 2020

Filed:

Oct 23, 2018

Appl. No.:

16/167533

Inventors:

- Schenectady NY, US
Anil Raj Duggal - Niskayuna NY, US
Christopher Michael Calebrese - Albany NY, US
Weijun Yin - Niskayuna NY, US
Wei Zhang - Ballston Lake NY, US
Jongwoo Choi - Boise ID, US

International Classification:

H02K 3/34
H02K 3/22
H02K 3/24
H02K 3/02
H02K 3/30
H02K 15/02
H02K 15/10

Abstract:

A method for forming an article is presented. The method includes providing one or more ceramic insulators having one or more recesses, providing a plurality of conductors within the one or more recesses of the one or more ceramic insulators, and joining a first conductor of the plurality of conductors to a second conductor of the plurality of conductors.

US Patent:

20190267155, Aug 29, 2019

Filed:

May 6, 2019

Appl. No.:

16/404381

Inventors:

- Schenectady NY, US
Lili Zhang - Niskayuna NY, US
Wei Zhang - Niskayuna NY, US
Anil Duggal - Niskayuna NY, US
Weijun Yin - Niskayuna NY, US

International Classification:

H01B 3/04
B32B 19/04
H01B 3/30
H01B 13/06

Abstract:

An insulative assembly includes an insulative mica-based carrier film and first and second resistive grading layers joined to opposite sides of the mica-based carrier film. The first resistive material layer is configured to engage one or more conductors and insulate the one or more conductors from at least one other conductor. A method for creating an insulative assembly for one or more conductors includes obtaining an insulative mica-based carrier film, depositing a first resistive grading layer on a first side of the mica-based carrier film, and depositing a second resistive grading layer on an opposite, second first side of the mica-based carrier film.

US Patent:

20180342919, Nov 29, 2018

Filed:

May 26, 2017

Appl. No.:

15/606123

Inventors:

- GRAND RAPIDS MI, US
Wei Zhang - Ballston Lake NY, US
Xiaochuan Jia - Centerville OH, US

International Classification:

H02K 3/22
H01B 5/04
H02K 15/06
H02K 7/18

Abstract:

A conductor a method of forming a conductor can include providing a hollow base conductor defining a fluid channel along the base conductor, and a solid conductor arranged about the perimeter of the hollow base conductor, wherein the fluid channel can be configured to allow a fluid to flow via the channel.