William D Houck

US Patent:

7656256, Feb 2, 2010

Filed:

Dec 28, 2007

Appl. No.:

12/005936

Inventors:

William D. Houck - Blacksburg VA, US
David W. Sherrer - Radford VA, US

Assignee:

Nuvotronics, PLLC - Radford VA

International Classification:

H01P 3/06

US Classification:

333244, 29828

Abstract:

Provided are three-dimensional microstructures and their methods of formation. The microstructures are formed by a sequential build process and include microstructural elements which are affixed to one another. The microstructures find use, for example, in coaxial transmission lines for electromagnetic energy.

US Patent:

8031037, Oct 4, 2011

Filed:

Oct 29, 2009

Appl. No.:

12/608870

Inventors:

David W. Sherrer - Radford VA, US
William D. Houck - Blacksburg VA, US

Assignee:

Nuvotronics, LLC - Redford VA

International Classification:

H01P 3/06

US Classification:

333244, 29828

Abstract:

Provided are three-dimensional microstructures and their methods of formation. The microstructures are formed by a sequential build process and include microstructural elements which are affixed to one another. The microstructures find use, for example, in coaxial transmission lines for electromagnetic energy.

US Patent:

8492185, Jul 23, 2013

Filed:

Jul 13, 2012

Appl. No.:

13/548931

Inventors:

Mark P. D'Evelyn - Goleta CA, US
James Speck - Goleta CA, US
William Houck - Fremont CA, US
Mathew Schmidt - Fremont CA, US
Arpan Chakraborty - Goleta CA, US

Assignee:

Soraa, Inc. - Fremont CA

International Classification:

H01L 21/00

US Classification:

438 36, 438 22, 438 26, 438 46, 438 47, 438604, 257E21121

Abstract:

A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.

US Patent:

20080199656, Aug 21, 2008

Filed:

Dec 28, 2007

Appl. No.:

12/005866

Inventors:

Christopher A. Nichols - Blacksburg VA, US
Shifang Zhou - Redmond WA, US
William D. Houck - Blacksburg VA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

B32B 3/10
C25D 5/02

US Classification:

428138, 205118

Abstract:

Provided are three-dimensional microstructures and their methods of formation. The microstructures are formed by a sequential build process and include microstructural elements which are affixed to one another. The microstructures find use, for example, in coaxial transmission lines for electromagnetic energy.

US Patent:

20120189863, Jul 26, 2012

Filed:

Aug 29, 2011

Appl. No.:

13/219736

Inventors:

William D. Houck - Blacksburg VA, US
David W. Sherrer - Radford VA, US

International Classification:

B32B 7/04
B32B 37/14
H01P 3/06
B32B 15/04
B32B 3/30
B32B 38/10
B32B 3/10

US Classification:

428596, 156247, 428600, 428138, 428164, 333239

Abstract:

Provided are three-dimensional microstructures and their methods of formation. The microstructures are formed by a sequential build process and include microstructural elements which are affixed to one another. The microstructures find use, for example, in coaxial transmission lines for electromagnetic energy.

US Patent:

20160377262, Dec 29, 2016

Filed:

Sep 9, 2016

Appl. No.:

15/261351

Inventors:

- Fremont CA, US
TROY TROTTIER - SAN JOSE CA, US
FRANK M. STERANKA - SAN JOSE CA, US
WILLIAM D. HOUCK - FREMONT CA, US
ARPAN CHAKRABORTY - CHANDLER AZ, US

International Classification:

F21V 9/08
F21K 9/235
F21V 19/00
F21V 3/00
H05B 33/08
F21V 23/06
H01L 25/075
H01L 33/60
H01L 33/56
H01L 33/50
F21V 29/74
F21V 7/00

Abstract:

An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

US Patent:

20160307372, Oct 20, 2016

Filed:

Mar 29, 2016

Appl. No.:

15/084326

Inventors:

- Mountain View CA, US
Yonggang Ha - Sunnyvale CA, US
William Houck - Fremont CA, US

International Classification:

G06T 19/00
H04N 13/00
H04N 13/02

Abstract:

A capture system may capture light-field data representative of an environment for use in virtual reality, augmented reality, and the like. The system may have a plurality of light-field cameras arranged to capture a light-field volume within the environment, and a processor. The processor may use the light-field volume to generate a first virtual view depicting the environment from a first virtual viewpoint. The light-field cameras may be arranged in a tiled array to define a capture surface with a ring-shaped, spherical, or other arrangement. The processor may map the pixels captured by the image sensors to light rays received in the light-field volume, and store data descriptive of the light rays in a coordinate system representative of the light-field volume.

US Patent:

20140346546, Nov 27, 2014

Filed:

Jun 11, 2014

Appl. No.:

14/301520

Inventors:

- FREMONT CA, US
ARPAN CHAKRABORTY - CHANDLER AZ, US
WILLIAM D. HOUCK - FREMONT CA, US

International Classification:

H01L 33/32
H01L 33/50
H01L 33/22

US Classification:

257 98

Abstract:

A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.