William Dean Morrison

US Patent:

6428387, Aug 6, 2002

Filed:

Jul 13, 2000

Appl. No.:

09/615378

Inventors:

Kyle P. Hunt - Dallas TX
William R. Morrison - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

B24B 100

US Classification:

451 8, 451 36, 451 41

Abstract:

A chemical mechanical polishing method using a modified slurry. A modified slurry is used with high platen rotational speed and high wafer carrier rotation speeds. The endpoint of the polishing process is determined by monitoring the electrical current of the wafer carrier motor.

US Patent:

6461965, Oct 8, 2002

Filed:

Jan 31, 2002

Appl. No.:

10/061811

Inventors:

Kyle P. Hunt - Dallas TX
William R. Morrison - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21461

US Classification:

438692, 438690, 438691, 438745

Abstract:

A method for effecting a finishing operation on a semiconductor workpiece situated in a finishing apparatus that includes a finishing tool configured for pressingly engaging the workpiece with a pressing force for abradingly removing material from the workpiece includes the steps of: (a) situating the finishing tool to operate against the workpiece; (b) operating the finishing tool with a pressing force to effect the abrading removal; (c) measuring at least one parameter associated with the finishing operation to determine at least one parametric value for the at least one parameter; (d) modulating the pressing force according to a predetermined relationship between the pressing force and the at least one parametric value; and (e) repeating steps (c) and (d) until the finishing operation is complete.

US Patent:

7452818, Nov 18, 2008

Filed:

Mar 30, 2007

Appl. No.:

11/694700

Inventors:

Kyle Hunt - Richardson TX, US
Neel Bhatt - Allen TX, US
Asadd M. Hosein - Plano TX, US
Brian L. Vialpando - Dallas TX, US
William R. Morrison - Dallas TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438692, 438680, 257E2117, 257E21304, 257E21632

Abstract:

The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features () over a substrate (), and then forming a layer of material () over the semiconductor features (). This method further includes selectively etching portions of the layer of material () based upon a density or size of the semiconductor features () located thereunder, and then polishing remaining portions of the layer of material ().

US Patent:

7818931, Oct 26, 2010

Filed:

Jun 1, 2005

Appl. No.:

11/142072

Inventors:

Fred A. Grunewald - Rockwall TX, US
James P. Clark - Terrell TX, US
William T. Morrison - Limestone TN, US

Assignee:

Oldcastle Glass Engineered Products, Inc. - Plano TX

International Classification:

E04B 2/96
E04F 10/00

US Classification:

52235, 52 74, 5274521, 52844

Abstract:

A curtain wall mounting system for cantilevered support of at least one structure. The system includes an anchor plate adapted to integrally mount with a web section of a curtain wall. The curtain wall web section includes either a hollow tongue web extending outwardly of the curtain wall vertical mullion or an integrally formed flange region extending outwardly of the curtain wall vertical mullion. The anchor plate has at least one generally planer body portion with a first set of mating apertures adapted for alignment with the first set of fastening apertures of the web. The first set of apertures are oriented generally perpendicular to the tension forces transmitted by the anchor plate. The anchor plate also includes a second set of apertures adapted for securing of structures outwardly from the curtain wall.

US Patent:

7960840, Jun 14, 2011

Filed:

May 11, 2009

Appl. No.:

12/463830

Inventors:

Thomas Dyer Bonifield - Dallas TX, US
Thomas W. Winter - McKinney TX, US
William R. Morrison - Dallas TX, US
Gregory D. Winterton - Flower Mound TX, US
Asad M. Haider - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 23/52

US Classification:

257774, 257E23145, 257E23169, 257E23627

Abstract:

A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.

US Patent:

8646229, Feb 11, 2014

Filed:

Jul 23, 2010

Appl. No.:

12/842466

Inventors:

Fred A. Grunewald - Rockwall TX, US
James P. Clark - Terrell TX, US
William T. Morrison - Limestone TN, US

Assignee:

Oldcastle BuildingEnvelope, Inc. - Dallas TX

International Classification:

E04B 2/96
E04F 10/00

US Classification:

52235, 52 74, 5274521, 52844

Abstract:

A curtain wall mounting system adapted for cantilevered support of at least one structure outwardly therefrom. The curtain wall mounting system including an anchor plate having dual plates and adapted for integral mounting with a curtain wall web section. The curtain wall web section includes one of a hollow tongue web extending outwardly of a curtain wall vertical mullion in a first direction and an integrally formed flange region extending outwardly of the curtain wall vertical mullion in the first direction. The curtain wall web section includes a first set of fastening apertures oriented transversely to the first direction and formed. The anchor plate includes at least one generally planer body portion having a first set of mating apertures adapted for alignment in registry with the first set of fastening apertures of the web. The anchor plate further having a second set of apertures adapted for securing structures outwardly therefrom.

US Patent:

20090243011, Oct 1, 2009

Filed:

Mar 26, 2008

Appl. No.:

12/055419

Inventors:

Earl V. Atnip - Plano TX, US
William R. Morrison - Dallas TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 31/0232
G02B 26/08

US Classification:

257432, 359580

Abstract:

In accordance with the teachings of one embodiment of the present disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.

US Patent:

20120307342, Dec 6, 2012

Filed:

Apr 2, 2012

Appl. No.:

13/437670

Inventors:

Earl V. Atnip - Plano TX, US
William R. Morrison - Dallas TX, US

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

B05D 5/06
G02B 26/00

US Classification:

359291, 427162

Abstract:

In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.