William Wui Ng

US Patent:

7928748, Apr 19, 2011

Filed:

Aug 22, 2008

Appl. No.:

12/229454

Inventors:

Fayik Bundhoo - Camarillo CA, US
William Ng - San Jose CA, US

Assignee:

National Semiconductgor - Santa Clara CA

International Classification:

G01R 31/302

US Classification:

324752, 324750

Abstract:

In an analysis of a semiconductor device under test (DUT) using a Thermal Induced Voltage Alteration (TIVA) tool, the TIVA is connected to an output of the DUT and the DC component on the output is decoupled from the TIVA. The remaining AC component from the output is analyzed by the TIVA while scanning the DUT with a scanning laser to identify locations on the DUT that produce signal anomalies at the DUT output.

US Patent:

D2549018, May 6, 1980

Filed:

Jan 3, 1978

Appl. No.:

5/866252

Inventors:

William W. Ng - Pasadena CA

Assignee:

Multirich Enterprise USA Incorporated

International Classification:

D1005

US Classification:

D10106

US Patent:

D2589435, Apr 21, 1981

Filed:

Apr 4, 1978

Appl. No.:

5/893486

Inventors:

William W. Ng - Pasadena CA

Assignee:

Electronic Security Systems, Inc. - Houston TX

International Classification:

D1005

US Classification:

D10106

US Patent:

20170294252, Oct 12, 2017

Filed:

Apr 11, 2016

Appl. No.:

15/095700

Inventors:

- Bethesda MD, US
Jaime Ballester - Palmdale CA, US
Thomas Richard Steiner - Palmdale CA, US
William Kui-Kun Ng - Valencia CA, US

International Classification:

H01C 17/00
H01C 7/20

Abstract:

In certain embodiments, a method comprises ablating, by a laser set to a first power level, a first area of a polyimide base substrate and forming, by ablating the first area of the polyimide base substrate, a first carbonaceous material film comprising a first specific resistive value. The method further comprises ablating, by the laser set to a second power level, a second area of the polyimide base substrate and forming, by ablating the second area of the polyimide base substrate, a second carbonaceous material film comprising a second specific resistive value. A tapered resistive material is produced by forming the first carbonaceous material film comprising the first specific resistive value and the second carbonaceous material film comprising the second specific resistive value.