William G Quinn

US Patent:

8486726, Jul 16, 2013

Filed:

Dec 2, 2009

Appl. No.:

12/629467

Inventors:

Joshua Mangum - Basking Ridge NJ, US
William E. Quinn - Whitehouse NJ, US

Assignee:

Veeco Instruments Inc. - Plainview NY

International Classification:

G01R 31/26
C23C 16/00

US Classification:

438 14, 118720

Abstract:

A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

US Patent:

20070134419, Jun 14, 2007

Filed:

Oct 6, 2006

Appl. No.:

11/544075

Inventors:

Bojan Mitrovic - Middlesex NJ, US
Alex Gurary - Bridgewater NJ, US
William Quinn - Whitehouse Station NJ, US
Eric Armour - Pennington NJ, US

International Classification:

C23C 16/00

US Classification:

427255500, 118719000, 118730000

Abstract:

In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

US Patent:

20110174213, Jul 21, 2011

Filed:

Oct 1, 2009

Appl. No.:

13/121371

Inventors:

Joshua Mangum - Basking Ridge NJ, US
William E. Quinn - Whitehouse NJ, US
Eric A. Armour - Pennington NJ, US

Assignee:

VEECO COMPOUND SEMICONDUCTOR, INC. - Somerset NJ

International Classification:

C30B 25/02
C23C 16/455

US Classification:

117103, 118723 R

Abstract:

A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode, thereby activating first precursor gas molecules.

US Patent:

20110290175, Dec 1, 2011

Filed:

Jul 18, 2011

Appl. No.:

13/185450

Inventors:

Ajit Paranjpe - Basking Ridge NJ, US
Eric A. Armour - Pennington NJ, US
William E. Quinn - Whitehouse NJ, US

Assignee:

VEECO INSTRUMENTS, INC. - Plainview NY

International Classification:

C30B 25/02
C30B 25/08
C30B 25/12

US Classification:

117 85, 117 88, 117101, 118712, 118719

Abstract:

A multi-chamber CVD system includes a plurality of substrate carriers where each substrate carrier is adapted to support at least one substrate. A plurality of enclosures are each configured to form a deposition chamber enclosing one of the plurality of substrate carriers to maintain an independent chemical vapor deposition process chemistry for performing a processing step. A transport mechanism transports each of the plurality of substrate carriers to each of the plurality of enclosures in discrete steps that allow processing steps to be performed in the plurality of enclosures for a predetermined time. In some embodiments, the substrate carrier can be rotatable.

US Patent:

20120272892, Nov 1, 2012

Filed:

Apr 6, 2012

Appl. No.:

13/441531

Inventors:

Ajit Paranjpe - Basking Ridge NJ, US
Alexander Gurary - Bridgewater NJ, US
William Quinn - Whitehouse Station NJ, US

Assignee:

Veeco Instruments Inc. - Plainview NY

International Classification:

C30B 25/14
C30B 25/16
C30B 25/10
C30B 25/02
C30B 25/08
C30B 25/12

US Classification:

117 86, 118729, 118730, 118724, 117 98, 118708, 117 88, 118715

Abstract:

A VPE reactor is improved by providing temperature control to within 0.5 C., and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation.

US Patent:

39745767, Aug 17, 1976

Filed:

Jul 28, 1975

Appl. No.:

5/599484

Inventors:

William T. Quinn - Freehold NJ

International Classification:

G09B 130
G09F 1106

US Classification:

35 28

Abstract:

A frame for holding the components of a facial identification system, wherein the system utilizes changeable components enabling a witness to direct construction of a representation of a face, has a back plate and a transparent cover plate. The back plate has positioning strips thereon contacted by at least some of the components. The back plate and cover plate are connected releasably at their side edges by combined hinge and closure straps which are adjustable as to tension. The straps are engaged on affixation pads secured to the plates.

US Patent:

40473074, Sep 13, 1977

Filed:

May 27, 1976

Appl. No.:

5/690812

Inventors:

William T. Quinn - Freehold NJ

International Classification:

G09B 130

US Classification:

35 28

Abstract:

A frame for a facial identification system of the type wherein changeable facial feature components are assembled to create a representaton of a face includes a base member with an elevated ledge along one side thereof. A transparent cover plate overlies a portion of the base member, and snap hinges extend between the ledge and the cover plate. Vertical and horizontal indicia on exposed portions of the base member provide coordinates for specification of location of facial features.

US Patent:

53028473, Apr 12, 1994

Filed:

Jun 4, 1993

Appl. No.:

8/072634

Inventors:

Rajaram Bhat - Red Bank NJ
Maria J. S. P. Brasil - Red Bank NJ
Robert E. Nahory - Lincroft NJ
William E. Quinn - Boulder CO
Maria C. Tamargo - Plainfield NJ

Assignee:

Bell Communications Research, Inc. - Livingston NJ

International Classification:

H01L 2920

US Classification:

257615

Abstract:

A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As-P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.