William Dale West

Address:

209 Locust St, Windsor, CO 80550

Phone:

(970)6865197

VIN:

WBAVS13538FX16670

Make:

BMW

Model:

3 SERIES

Year:

2008

US Patent:

6418049, Jul 9, 2002

Filed:

Jul 27, 2000

Appl. No.:

09/555612

Inventors:

Michael N. Kozicki - Phoenix AZ
William C. West - South Pasadena CA

Assignee:

Arizona Board of Regents - Phoenix AZ

International Classification:

G11C 1300

US Classification:

365174, 365182

Abstract:

A programmable sub-surface aggregating metallization sructure (âPSAMâ) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of the two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor and connects the electrodes, thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.

US Patent:

6798692, Sep 28, 2004

Filed:

May 21, 2002

Appl. No.:

10/153284

Inventors:

Michael N. Kozicki - Phoenix AZ
William C. West - South Pasadena CA

Assignee:

Axon Technologies Corporation - Scottsdale AR

International Classification:

G11C 1134

US Classification:

365174, 365182, 36518529

Abstract:

A programmable sub-surface aggregating metallization structure (âPSAMâ) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode. When a voltage is applied for a sufficient length of time, a continuous metal dendrite grows through the ion conductor and connects the electrodes, thereby shorting the device. The continuous metal dendrite then can be broken by applying another voltage.

US Patent:

7142450, Nov 28, 2006

Filed:

Sep 27, 2004

Appl. No.:

10/952115

Inventors:

Michael N. Kozicki - Phoenix AZ, US
William C. West - South Pasadena CA, US

Assignee:

Arizona Board of Regents - Phoneix AZ
Axon Technologies Corporation - Scottsdale AZ

International Classification:

G11C 11/34
G11C 7/00

US Classification:

365174, 365182

Abstract:

A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode.

US Patent:

58963120, Apr 20, 1999

Filed:

Jan 7, 1998

Appl. No.:

9/004041

Inventors:

Michael N. Kozicki - Phoenix AZ
William C. West - Phoenix AZ

Assignee:

Axon Technologies Corporation - Scottsdale AZ

International Classification:

G11C 1302

US Classification:

365153

Abstract:

A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e. g. , an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.

US Patent:

57611157, Jun 2, 1998

Filed:

May 30, 1996

Appl. No.:

8/652706

Inventors:

Michael N. Kozicki - Phoenix AZ
William C. West - Phoenix AZ

Assignee:

Axon Technologies Corporation - Scottsdale AZ
Arizona Board of Regents - Phoenix AZ

International Classification:

G11C 1300

US Classification:

365182

Abstract:

A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e. g. , an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.

US Patent:

60847964, Jul 4, 2000

Filed:

Jan 12, 1999

Appl. No.:

9/228727

Inventors:

Michael N. Kozicki - Phoenix AZ
William C. West - Phoenix AZ

Assignee:

Axon Technologies Corporation - Scottsdale AZ
Arizona Board of Regents - Phoenix AZ

International Classification:

G11C 1302

US Classification:

365153

Abstract:

A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e. g. , an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.

US Patent:

59148934, Jun 22, 1999

Filed:

Jan 7, 1998

Appl. No.:

9/003971

Inventors:

Michael N. Kozicki - Phoenix AZ
William C. West - Phoenix AZ

Assignee:

Axon Technologies Corporation - Scottsdale AZ
Arizona Board of Regents - Phoenix AZ

International Classification:

G11C 1302

US Classification:

365107

Abstract:

A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e. g. , an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC.