William Wong

US Patent:

6335263, Jan 1, 2002

Filed:

Mar 22, 2000

Appl. No.:

09/535658

Inventors:

Nathan W. Cheung - Albany CA
Timothy David Sands - Moraga CA
William S. Wong - Berkeley CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 2130

US Classification:

438455, 438458, 438604

Abstract:

A method of forming a low temperature metal bond includes the step of providing a donor substrate, such as a crystallographically oriented donor substrate, including a sapphire donor substrate or a MgO donors substrate. The donor substrate may also be quartz or fused silica. A thin film is grown on a surface of the donor substrate. The thin film may be an oxide, nitride or Perovskite. The invention may be implemented using nitride thin films, including AlN, GaN, InN, and all of their solid solutions, alloys, and multi-layers. An acceptor substrate is then produced. The acceptor substrate may be Si, GaAs, polymers, such as polyimide, or stainless steel for use in microrobotics. A multi-layer metal bond interface for positioning between the thin film and the acceptor substrate is then selected. The multi-layer metal bond interface must satisfy a set of criteria, such as low temperature bonding, low resistance to shear stress, capability to adhere to the donor and acceptor substrates, and the ability to form a thin new bonded layer. A bonded layer is then formed, at a temperature below approximately 200Â C.

US Patent:

6417961, Jul 9, 2002

Filed:

Dec 4, 2000

Appl. No.:

09/727775

Inventors:

Yan Sun - Menlo Park CA
Chien-Jen Chen - Cupertino CA
William S. Wong - San Jose CA

Assignee:

Onetta, Inc. - Sunnyvale CA

International Classification:

H01S 300

US Classification:

3593375, 359334

Abstract:

Optical amplifiers are provided that have dispersion-compensating fiber that is pumped with an optical source to produce Raman gain. Removable modules of dispersion-compensating fiber, which may be separate from the Raman-pumped dispersion-compensating fiber, may be used to adjust the amount of dispersion compensation provided by a given amplifier. The Raman pump may be formed using fiber-Bragg-grating-stabilized diode lasers or other suitable pump sources. Two cross-polarized diode lasers may be used for the Raman pump to reduce the dependence of the Raman gain on the polarization of the pump. If desired, the dispersion-compensating fiber may be Raman pumped using a two-pass configuration in which pump light reflects off of a reflector to produce additional gain. The reflector may be a Faraday rotator to minimize polarization-dependent pump effects.

US Patent:

6420242, Jul 16, 2002

Filed:

Jan 6, 2000

Appl. No.:

09/478915

Inventors:

Nathan W. Cheung - Albany CA
Timothy D. Sands - Moraga CA
William S. Wong - Berkeley CA

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 21302

US Classification:

438458

Abstract:

A method of separating a thin film of GaN epitaxially grown on a sapphire substrate. The thin film is bonded to an acceptor substrate, and the sapphire substrate is laser irradiated with a scanned beam at a wavelength at which sapphire is transparent but the GaN is strongly absorbing, e. g. , 248 nm. After the laser irradiation, the sample is heated above the melting point of gallium, i. e. , above 30Â C. , and the acceptor substrate and attached GaN thin film are removed from the sapphire growth substrate. If the acceptor substrate is flexible, the GaN thin film can be scribed along cleavage planes of the GaN, and, when the flexible substrate is bent, the GaN film cleaves on those planes. Thereby, GaN lasers and other electronic and opto-electronic devices can be formed.

US Patent:

6562648, May 13, 2003

Filed:

Aug 23, 2000

Appl. No.:

09/648187

Inventors:

William S. Wong - Berkeley CA
Michael A. Kneissl - Mountain View CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01L 2100

US Classification:

438 46, 438 33, 438455, 438458, 438460, 438464, 438977

Abstract:

A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.

US Patent:

6617261, Sep 9, 2003

Filed:

Dec 18, 2001

Appl. No.:

10/017599

Inventors:

William S. Wong - Berkeley CA
David K. Biegelsen - Portola Valley CA
Michael A. Kneissl - Mountain View CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01L 2348

US Classification:

438778

Abstract:

Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substrate and a laser pulse directed through the transparent sapphire detaches the gallium nitride layers from the sapphire substrate. The gallium nitride layers are then detached from the support substrate forming freestanding gallium nitride substrates.

US Patent:

6627921, Sep 30, 2003

Filed:

Dec 16, 2002

Appl. No.:

10/320823

Inventors:

William S. Wong - Berkeley CA
Michael A. Kneissl - Mountain View CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01L 2715

US Classification:

257 79, 372 43

Abstract:

A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.

US Patent:

6742884, Jun 1, 2004

Filed:

Apr 19, 2001

Appl. No.:

09/838685

Inventors:

William S. Wong - Berkeley CA
Robert A. Street - Palo Alto CA
Stephen D. White - Santa Clara CA
Robert Matusiak - Sunnyvale CA
Raj B. Apte - Palo Alto CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

E03F 100

US Classification:

347 99, 347 46, 347 2, 347 14, 347 16, 347 17, 347 18, 430 5

Abstract:

A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.

US Patent:

6759713, Jul 6, 2004

Filed:

Nov 22, 2002

Appl. No.:

10/303524

Inventors:

Michael L. Chabinyc - Mountain View CA
William S. Wong - San Carlos CA
Kateri E. Paul - Mountain View CA
Robert A. Street - Palo Alto CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01L 2701

US Classification:

257347, 257348, 257350, 257351

Abstract:

A structure and method of using microfluidic channels to form an array of semiconductor devices is described. The microfluidic channels have been found to be particularly useful when formed in a self aligned process and used to interconnect a series of thin film transistor (TFT) devices.

Address:

7488 Fitzroy Ct, West Chester, OH 45241

Phone:

(513)7792691

VIN:

1NXBU40E39Z153070

Make:

TOYOTA

Model:

COROLLA

Year:

2009