Wing Wah Cheng

US Patent:

6503368, Jan 7, 2003

Filed:

Jun 29, 2000

Appl. No.:

09/607533

Inventors:

Arnold Kholodenko - San Francisco CA
Vijay Parkhe - Sunnyvale CA
Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Wing L. Cheng - Sunnyvale CA
Alexander M. Veytser - Mountain View CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

15634551, 15634552, 15634553, 15634548, 118728, 118500, 118723 I

Abstract:

A substrate support comprises first, second and third sections connected to one another by first and second bonds , one of the sections comprises a surface adapted to receive a substrate. The first bond comprises a first bonding material and the second bond comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.

US Patent:

6676760, Jan 13, 2004

Filed:

Aug 16, 2001

Appl. No.:

09/930938

Inventors:

Arnold V. Kholodenko - San Francisco CA
Dan Katz - Agoura Hills CA
Wing L. Cheng - Sunnyvale CA

Assignee:

Appiled Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118728, 118715, 118726, 118723 R, 15634533, 15634551

Abstract:

A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

US Patent:

6736668, May 18, 2004

Filed:

Sep 15, 2000

Appl. No.:

09/663864

Inventors:

Arnold V. Kholodenko - San Francisco CA 94132
Senh Thach - Union City CA 94587
Wing L. Cheng - Sunnyvale CA 94087
Alvin Lau - San Francisco CA 94121
Dennis S. Grimard - Ann Arbor MI 48103

International Classification:

H01R 1300

US Classification:

439487, 439485

Abstract:

An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.

US Patent:

20080038448, Feb 14, 2008

Filed:

Mar 30, 2007

Appl. No.:

11/731075

Inventors:

Arnold Kholodenko - San Francisco CA, US
Wing Cheng - Sunnyvale CA, US
Helen Cheng - Sunnyvale CA, US
Grant Peng - Fremont CA, US
Katrina Mikhaylichenko - San Jose CA, US

Assignee:

LAM RESEARCH CORP. - Fremont CA

International Classification:

B05C 11/00
B05D 3/00

US Classification:

427097600, 118501000, 118073000, 427299000

Abstract:

In one embodiment a chamber body enabling semiconductor processing equipment to be at least partially housed in the chamber body, the semiconductor processing equipment being configured to process a substrate using fluids is disclosed. The chamber body being comprised of a base material implemented to form the chamber body, the chamber body defined by at least a bottom surface and wall surfaces that are integrally connected to the bottom surface to enable capture of overflows of fluids during the processing of the substrate over the chamber body. Additionally, the base material is metallic. The chamber body also has a primer coat material disposed over and on the base material. The primer coat material has metallic constituents to define an integrated bond with the base material along with non-metallic constituents. The chamber body further includes a main coat material disposed over and on the primer coat material. The main coat material being defined from non-metallic constituents, the non-metallic constituents of the main coat material defining an integrated bond with the primer coat material. The main coat material defined to completely overlie all the metallic constituents of the primer coat.

US Patent:

63107554, Oct 30, 2001

Filed:

May 7, 1999

Appl. No.:

9/307215

Inventors:

Arnold Kholodenko - San Francisco CA
Shamouil Shamouilian - San Jose CA
You Wang - Cupertino CA
Wing L. Cheng - Sunnyvale CA
Alexander M. Veytser - Mountain View CA
Surinder S. Bedi - Fremont CA
Kadthala R. Narendrnath - San Jose CA
Semyon L. Kats - San Francisco CA
Dennis S. Grimard - Ann Arbor CA
Ananda H. Kumar - Milpitas CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01G 2300

US Classification:

361234

Abstract:

An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.