Winston V Schoenfeld

US Patent:

8362476, Jan 29, 2013

Filed:

Mar 18, 2010

Appl. No.:

12/726545

Inventors:

Winston V. Schoenfeld - Oviedo FL, US

Assignee:

University of Central Florida Research Foundation, Inc. - Orlando FL

International Classification:

H01L 29/10
H01L 29/24

US Classification:

257 43, 257 55, 257103

Abstract:

A cubic epitaxial article and electronic devices therefrom includes a single crystal cubic oxide substrate having a substrate band gap and a top surface. An epitaxial cubic oxide alloy layer that includes at least one transition metal or group IIA metal disposed on the top surface of the substrate. The epitaxial cubic oxide alloy layer has a band gap that is different than the substrate band gap and has a lattice that is lattice matched within 5% to a lattice of the single crystal cubic oxide substrate.

US Patent:

20110261263, Oct 27, 2011

Filed:

Apr 21, 2011

Appl. No.:

13/091616

Inventors:

Winston V. Schoenfeld - Oviedo FL, US
Huiyang Zhou - Cary NC, US

Assignee:

UNIVERSITY OF CENTRAL FLORIDA - Orlando FL

International Classification:

H04N 5/57
G02F 1/13357

US Classification:

348687, 362 971, 362 973, 349 61, 348739, 348E05119

Abstract:

Backlit video display systems where the backlights (for example, LED backlights) are controlled based at least in part on the content of the video signal of the video that is being displayed by the backlit video display system. The system can provide specific control of the three primary colors (for example, red, green and blue LEDs). The system can content-based control in a spatial mode. The system a smart backlighting system with content-based controls at the following levels: (i) spectral, (ii) spatial, and (iii) temporal control. Also, some embodiments may provide a novel way of providing a backlit video display system with night vision (NV) capability through a unique four LED chip architecture.

US Patent:

20120060907, Mar 15, 2012

Filed:

Jun 30, 2011

Appl. No.:

13/173748

Inventors:

Winston V. Schoenfeld - Oviedo FL, US
Hani Khallaf - El-Minia City, EG

Assignee:

UNIVERSITY OF CENTRAL FLORIDA - Orlando FL

International Classification:

H01L 31/06
H01L 31/0224
H01L 31/0216

US Classification:

136255, 136256, 438 98, 257E31124

Abstract:

A back-to-back parallel tandem organic photovoltaic cell structure and a method for fabricating the back-to-back parallel tandem organic photovoltaic cell structure include an aluminum doped zinc oxide material layer (AZO) as a common central cathode within the back-to-back parallel tandem organic photovoltaic cell structure and sandwiched between (and contacting) a pair of lithium fluoride material layers (LiF). The back-to-back parallel tandem organic photovoltaic cell structure and the related method also includes separate and different active material layers further separated from the aluminum doped zinc oxide material layer (AZO) common central cathode and further separated nickel and indium doped tin oxide material layer (Ni-ITO) anodes. An aluminum doped zinc oxide material layer (AZO) and lithium fluoride material layer (LiF) laminate is also contemplated for use in various photovoltaic cell structures.

US Patent:

20120060910, Mar 15, 2012

Filed:

Apr 20, 2011

Appl. No.:

13/090441

Inventors:

Winston V. Schoenfeld - Oviedo FL, US
Hani Khallaf - El-Minia City, EG

Assignee:

UNIVERSITY OF CENTRAL FLORIDA - Orlando FL

International Classification:

H01L 31/0224
H01L 31/0376

US Classification:

136256, 438 96, 438 98, 257E31047, 257E51012

Abstract:

An organic photovoltaic cell structure and a method for fabricating the organic photovoltaic cell structure are each predicated upon an organic photovoltaic material layer located and formed interposed between an anode and a cathode. The organic photovoltaic cell structure and the method for fabricating the organic photovoltaic cell structure also include for the anode a nickel and indium doped tin oxide material layer (Ni-ITO) that has a nickel doping sufficient to provide a work function of the nickel and indium doped tin oxide material layer (Ni-ITO) anode preferably no more positive than about −5.0 eV. Such a composition of the nickel and indium doped tin oxide material layer (Ni-ITO) anode provides for a superior bandgap matching to a B3HT p-type donor component within a B3HT:BPCM BHJ organic photovoltaic material layer while also providing a greater bandgap separation of an aluminum material layer (Al) cathode to provide for enhanced electric field and charge carrier transport and collection capabilities of an organic photovoltaic cell device that derives from the organic photovoltaic cell structure.

US Patent:

6885034, Apr 26, 2005

Filed:

May 6, 2004

Appl. No.:

10/840695

Inventors:

Winston Vaughan Schoenfeld - Tampa FL, US

International Classification:

H01L029/22

US Classification:

257 98, 257 79, 438 42

Abstract:

The light extraction efficiency of a Light Emitting Diode (LED) is improved by providing pits etched into a top, emitting, surface of the LED. The presence of the pits reduces the mean distance to a sidewall in active regions, and creates regions of higher transmission at which a semi-transparent contact is not present. The walls of the pits are preferably coated with a passivating layer, such as silicon dioxide, to reduce surface leakage currents and to improve the operational stability of the device at the expense of a reduction in optical extraction efficiency commonly obtained with encapsulants having a higher index of refraction.

US Patent:

20160276976, Sep 22, 2016

Filed:

Nov 19, 2013

Appl. No.:

14/442487

Inventors:

- Orlando FL, US
David K. Click - Orlando FL, US
Robert M. Reedy - Auburndale FL, US
Winston V. Schoenfeld - Oviedo FL, US

Assignee:

UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. - Orlando FL

International Classification:

H02S 50/10

Abstract:

A method, a system and a program product for use when monitoring degradation of a photovoltaic cell each use a plurality of current-voltage curves for the photovoltaic cell obtained at a plurality of predetermined times, where the plurality of current-voltage curves is obtained when the photovoltaic cell (or related module, string or array) is in operational service. The use of such a plurality of current-voltage curves provides for extraction of a plurality of degradation characteristics or parameters for the photovoltaic cell.

US Patent:

20150179832, Jun 25, 2015

Filed:

May 30, 2014

Appl. No.:

14/291793

Inventors:

- Orlando FL, US
R. CASEY BOUTWELL - OVIEDO FL, US
WINSTON V. SCHOENFELD - OVIEDO FL, US

Assignee:

University of Central Florida Research Foundation, Inc. - Orlando FL

International Classification:

H01L 31/0296
H01L 31/0368
H01L 31/18

Abstract:

A photodetector (PD) includes a substrate, and a ZnO nucleation layer on the substrate. A wurtzite MgZnO layer is on the ZnO nucleation layer, wherein x is a mole fraction between 0 and 0.62. A level of crystallinity of the wurtzite MgZnO layer characterized by x-ray diffraction with a deconvolution of a triple-crystal ω rocking curve of a ZnO (0002) peak has a narrow component with a full width at half maximum (FWHM) less than or equal to (≦) 20 arc/s. First and second spaced apart electrodes are on a surface of the wurtzite MgZnO layer. The mole fraction x can be between 0.20 and 0.46, including between 0.37 and 0.46, and provide a PD responsivity of at least 20 A/W at 5V in the solar blind region from 200 nm to 290 nm.

US Patent:

20140284598, Sep 25, 2014

Filed:

Mar 21, 2014

Appl. No.:

14/222242

Inventors:

- Orlando FL, US
MING WEI - ORLANDO FL, US
WINSTON V. SCHOENFELD - OVIEDO FL, US

Assignee:

University of Central Florida Research Foundation, Inc. - Orlando FL

International Classification:

H01L 31/032
H01L 31/18

US Classification:

257 43, 438 85

Abstract:

A method of forming an ultraviolet (UV) photodetector includes forming an epitaxial semiconductor metal oxide layer on a substrate, wherein the forming includes using an Oflow rate and applied RF plasma power which together provide a ratio of O• (oxygen radicals) to O of at least 1.5. Metal fingers are formed on a surface of the semiconductor metal oxide layer. The metal fingers can include a multi-layer stack including a metal having a 25 C. work function