Woojin Kim

US Patent:

20190172871, Jun 6, 2019

Filed:

Jan 17, 2019

Appl. No.:

16/251008

Inventors:

- Fremont CA, US
Woojin Kim - Los Altos CA, US
Yiming Huai - Pleasanton CA, US

International Classification:

H01L 27/22
H01L 45/00
H01L 43/02
G11C 11/16
H01F 10/32

Abstract:

The present invention is directed to a memory device that includes an array of memory cells. Each of the memory cells includes a memory element connected to a two-terminal selector element. The two-terminal selector element includes a first electrode and a second electrode with a volatile switching layer interposed therebetween. The second electrode is deposited on top of the volatile switching layer during fabrication. The first electrode has a composition comprising a metal element and the second electrode has a composition comprising the metal element and aluminum element. The metal element may be silver, copper, or nickel. The volatile switching layer may have a composite structure comprising a plurality of conductive particles embedded in an insulating matrix. Alternatively, the volatile switching layer may have a multilayer structure comprising one or more conductive layers interleaved with two or more insulating layers. The memory element may include a magnetic tunnel junction.