Zhiyuan Ye - Cupertino CA, US Yihwan Kim - Milpitas CA, US Xiaowei Li - Sunnyvale CA, US Ali Zojaji - Santa Clara CA, US Nicholas C. Dalida - Fremont CA, US Jinsong Tang - Santa Clara CA, US Xiao Chen - San Jose CA, US Arkadii V. Samoilov - Sunnyvale CA, US
In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation
Zhiyuan Ye - Cupertino CA, US Yihwan Kim - Milpitas CA, US Xiaowei Li - Sunnyvale CA, US Ali Zojaji - Santa Clara CA, US Nicholas C. Dalida - Fremont CA, US Jinsong Tang - Santa Clara CA, US Xiao Chen - San Jose CA, US Arkadii V. Samoilov - Sunnyvale CA, US
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation
Zhiyuan Ye - Cupertino CA, US Yihwan Kim - Milpitas CA, US Xiaowei Li - Sunnyvale CA, US Ali Zojaji - Santa Clara CA, US Nicholas C. Dalida - Fremont CA, US Jinsong Tang - Santa Clara CA, US Xiao Chen - San Jose CA, US Arkadii V. Samoilov - Sunnyvale CA, US
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation
Zhiyuan Ye - Cupertino CA, US Yihwan Kim - Milpitas CA, US Xiaowei Li - Sunnyvale CA, US Ali Zojaji - Santa Clara CA, US Nicholas C. Dalida - Fremont CA, US Jinsong Tang - Santa Clara CA, US Xiao Chen - San Jose CA, US Arkadii V. Samoilov - Sunnyvale CA, US
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
- Santa Clara CA, US Thai Cheng Chua - Cupertino CA, US Christian W. Valencia - Alhambra CA, US Joung Joo Lee - San Jose CA, US Xianmin Tang - San Jose CA, US Xiao Chen - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/27 C23C 16/56 C23C 16/511 C23C 16/52
Abstract:
A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.
Nov 2013 to 2000 QC Biochemist - Special Manufacturing (Contractor)Bio-Rad Hercules, CA Jul 2013 to Nov 2013 Production Biochemist - Bio-Plex (Contractor)California State University Fullerton, CA Aug 2010 to Dec 2012 Graduate Researcher/Teaching AssociateLawrence Berkeley National Laboratory Berkeley, CA Jun 2008 to Jul 2010 Research AssociateUniversity of California Berkeley, CA Sep 2005 to May 2008 Undergraduate Research Assistant
Education:
California State University Fullerton, CA Aug 2010 to Dec 2012 Master of Science in BiochemistryUniversity of California Berkeley, CA Jan 2004 to May 2008 Bachelor of Science in Chemical Biology
Park Side Endodontice San Francisco, CA May 2014 to Oct 2014 Registered Dental AssistantNob Hill Dental San Francisco, CA Feb 2014 to May 2014 Registered Dental AssistantTender Love Dental Care Corporation Alameda, CA Dec 2012 to May 2014 Registered Dental Assistant
Education:
CCSF San Francisco, CA 2010 to 2012 License in RDA
1996 to 2000 Bankruptcy Assistant/Assistant System Manager/ChapterCatholic Charities Elderly Services
1995 to 1995 SecretaryChinese Language School
1990 to 1995 TeacherUniversity of Guangzhou Guangzhou, CN 1988 to 1990 Lecturer of ChemistryInsturctor of Chemistry/College of Education, China
1982 to 1988
Education:
University of Hawaii Community Colleges 2000 Analysis/DesignThe Board of Education 1994 to 1995 Certificate of Data in MajoringNan Normal University 1988 Certificate of Lecturer in ChemistryShan University 1986 to 1987 Master's in MajoringNan Normal University 1984 Physical ChemistryThe South China Institute of Technology 1978 to 1982 Bachelor's in Physical Chemistry
Hong Kong people should have a world view, and not only focus on one citys arguments. Its not easy for the U.S. to create a disturbance in China, but its super easy to rock the boat through Hong Kong, Xiao Chen wrote.