Xiao Chen - Peoria IL Yi Dong - Peoria IL Edward T. Martin - Decatur IL Zhishang Yang - Dunlap IL Wayne Tanner - Chicago IL
Assignee:
Caterpillar Inc. - Peoria IL
International Classification:
B23K 910
US Classification:
219110, 219109, 219119, 703 1, 703 2, 703 6
Abstract:
A method for designing a weld fixture. The method includes modeling a set of distortions produced by applied mechanical forces on a material to be welded, modeling a set of distortions produced by applied thermal forces on the material to be welded, determining a set of reaction forces at a series of locations on a simulated weld fixture as a function of the modeled distortions, and designing a weld fixture as a function of the set of reaction forces.
Method And Apparatus For Providing A Simulation Of A Welding Process Using Integrated Models
Xiao Chen - Peoria IL Yi Dong - Peoria IL Ashok Nanjundan - Savoy IL
Assignee:
Caterpillar Inc - Peoria IL
International Classification:
G06F 1710
US Classification:
703 2, 703 7, 706915, 2191171
Abstract:
A method and apparatus for providing a simulation of a welding process using integrated models which are interconnected by an interconnection tool to determine stresses and distortions of a material being welded. The method and apparatus includes determining a model of a geometry of a set of materials to be welded, defining a set of coordinates of elements and nodes of the geometry model for a finite element analysis mesh, delivering the finite element analysis mesh coordinates to a thermal analysis model, the thermal analysis model including an analytical solution model and a finite element analysis model, and determining a thermal analysis of the welding process, the thermal analysis responsively providing a thermal history of the welding process. The method and apparatus further includes delivering the thermal history of the welding process to a structural analysis model, and providing a structural analysis of the welding process as a function of the thermal history.
Method For Providing A Process Model For A Material In A Manufacturing Process
Xiao Chen - Peoria IL, US Yi Dong - Peoria IL, US Tarsem S. Jutla - Peoria IL, US Ashok Nanjundan - Savoy IL, US
Assignee:
Caterpillar Inc. - Peoria IL
International Classification:
G05B 13/02
US Classification:
700 31, 703 1, 703 6
Abstract:
A method for providing a process model for a material in a manufacturing process. The method includes the steps of receiving stress and distortion information of the material from a previous manufacturing process, determining updated stress and distortion information of the material from a process model for the present manufacturing process, the updated stress and distortion information being a function of the stresses and distortions caused by the present manufacturing process and the stresses and distortions from the previous manufacturing process, and providing the updated stress and distortion information of the material to a subsequent manufacturing process.
Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation
Zhiyuan Ye - Cupertino CA, US Yihwan Kim - Milpitas CA, US Xiaowei Li - Sunnyvale CA, US Ali Zojaji - Santa Clara CA, US Nicholas C. Dalida - Fremont CA, US Jinsong Tang - Santa Clara CA, US Xiao Chen - San Jose CA, US Arkadii V. Samoilov - Sunnyvale CA, US
In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation
Zhiyuan Ye - Cupertino CA, US Yihwan Kim - Milpitas CA, US Xiaowei Li - Sunnyvale CA, US Ali Zojaji - Santa Clara CA, US Nicholas C. Dalida - Fremont CA, US Jinsong Tang - Santa Clara CA, US Xiao Chen - San Jose CA, US Arkadii V. Samoilov - Sunnyvale CA, US
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
Knowledge Portal For Evaluating Product Attractiveness And Risk
Eugene Rider - Oak Brook IL, US Scott Milkovich - Glen Ellyn IL, US Tina Brown - Wheaton IL, US Xiao Chen - Naperville IL, US
Assignee:
RAM Consulting - Oak Brook IL
International Classification:
G06Q 40/00
US Classification:
705 35
Abstract:
A method and system is provided to uniformly evaluate product characteristics and identifying risk factors associated with the products so that a comprehensive scoring system provides an attractiveness score by age brackets and also provides for a consistent quantification process so that an overall characterization may be viewed by a color coded scoring scheme. The scoring system is based on predetermined scores created for age brackets and pre-identified product attributes. Through user feedback a new product may be evaluated using a series of questions that are associated with the predetermined scores producing an overall attractiveness score. Through another set of questions and predetermined mitigation scores, a mitigations score may be developed for the product so that by combining the attractiveness score with the mitigation score and comprehensive product score may be produced indicative of risk. The invention also provides for exploring various categories of characteristics that may lead to particular behavioral responses to the product by age group.
Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation
Zhiyuan Ye - Cupertino CA, US Yihwan Kim - Milpitas CA, US Xiaowei Li - Sunnyvale CA, US Ali Zojaji - Santa Clara CA, US Nicholas C. Dalida - Fremont CA, US Jinsong Tang - Santa Clara CA, US Xiao Chen - San Jose CA, US Arkadii V. Samoilov - Sunnyvale CA, US
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
Robert Altkorn - Chicago IL, US Xiao Chen - Naperville IL, US Scott Milkovich - Glen Ellyn IL, US John Owens - Oak Lawn IL, US Brian Rider - Sommerville MA, US Eugene Rider - Oak Brook IL, US Daniel Stool - Addison IL, US
An apparatus and method for assessing a hazard associated with an object are disclosed. The apparatus includes a haptic input/output device coupled to a computer with haptic modeling software and a display device. A virtual object and a virtual passageway are displayed on the display device. The virtual passageway includes a haptic layer along a surface thereof. Force applied by a user to the haptic input/output device causes a cursor on the display device to move the virtual object into the virtual passageway. An interaction of the virtual object with the haptic layer generates a virtual contact force which may be determined by the user sensing a corresponding tactile feedback force generated by the haptic input/output device and/or by the computer processor. The magnitude of the virtual contact force may be used to assess a hazard associated with the virtual object.
1996 to 2000 Bankruptcy Assistant/Assistant System Manager/ChapterCatholic Charities Elderly Services
1995 to 1995 SecretaryChinese Language School
1990 to 1995 TeacherUniversity of Guangzhou Guangzhou, CN 1988 to 1990 Lecturer of ChemistryInsturctor of Chemistry/College of Education, China
1982 to 1988
Education:
University of Hawaii Community Colleges 2000 Analysis/DesignThe Board of Education 1994 to 1995 Certificate of Data in MajoringNan Normal University 1988 Certificate of Lecturer in ChemistryShan University 1986 to 1987 Master's in MajoringNan Normal University 1984 Physical ChemistryThe South China Institute of Technology 1978 to 1982 Bachelor's in Physical Chemistry
Hong Kong people should have a world view, and not only focus on one citys arguments. Its not easy for the U.S. to create a disturbance in China, but its super easy to rock the boat through Hong Kong, Xiao Chen wrote.