Xiao Rong Liu

US Patent:

6896729, May 24, 2005

Filed:

Jul 3, 2002

Appl. No.:

10/190001

Inventors:

Xiao Gordon Liu - Fremont CA, US
Wei Guo Liu - Sunnyvale CA, US

Assignee:

AXT, Inc. - Fremont CA

International Classification:

C30B011/06

US Classification:

117 81, 117 82, 117 83, 117223

Abstract:

Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into and out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.

US Patent:

7388273, Jun 17, 2008

Filed:

Jun 14, 2005

Appl. No.:

11/152750

Inventors:

Geoffrey W. Burr - Cupertino CA, US
Chandrasekharan Kothandaraman - Hopewell Junction NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Christy S. Tyberg - Mahopac NY, US
Robert L. Wisnieff - Ridgefield CT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/00

US Classification:

257529, 257530, 257E23149, 257E21592

Abstract:

A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

US Patent:

7855223, Dec 21, 2010

Filed:

Jul 26, 2006

Appl. No.:

11/494362

Inventors:

Ruihuan Chen - Palo Alto CA, US
Simon K. Mencher - New York NY, US
Allen Tsao - Windlake WI, US
Xiao Mei Liu - Flushing NY, US
Longgui Wang - Flushing NY, US

Assignee:

Natrogen Therapeutics International, Inc. - New York NY

International Classification:

A61K 31/40
A61K 31/405
A61K 31/56
A61K 31/19

US Classification:

514414, 514415, 514416, 514 23, 514159, 514171, 514570, 51425409

Abstract:

The present invention is directed to a method for treating inflammatory arthritis in a mammal. The method typically comprises administering to an animal a therapeutically effective amount of at least one compound selected from indigo, isoindigo, indirubin or derivatives thereof, such as NATURA-α or NATURA. The present invention is further directed to pharmaceutical compositions that include a therapeutically effective amount of at least one compound of the invention, an anti-inflammatory arthritis agent and a pharmaceutically acceptable carrier.

US Patent:

7960808, Jun 14, 2011

Filed:

Aug 23, 2007

Appl. No.:

11/844109

Inventors:

Geoffrey W. Burr - Cupertino CA, US
Chandrasekharan Kothandaraman - Hopewell Junction NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Christy S. Tyberg - Mahopac NY, US
Robert L. Wisnieff - Ridgefield CT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/00

US Classification:

257529, 257530, 257E23147, 257E23149, 257E21592

Abstract:

A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

US Patent:

8278155, Oct 2, 2012

Filed:

May 4, 2011

Appl. No.:

13/100456

Inventors:

Geoffrey W. Burr - Cupertino CA, US
Chandrasekharan Kothandaraman - Hopewell Junction NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Stephen M. Rossnagel - Pleasantville NY, US
Christy S. Tyberg - Mahopac NY, US
Robert L. Wisnieff - Ridgefield CT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/82
H01L 21/326
H01L 21/479

US Classification:

438131, 438132, 438467, 438600, 438601, 257E21592

Abstract:

A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

US Patent:

20030172870, Sep 18, 2003

Filed:

Mar 14, 2002

Appl. No.:

10/097844

Inventors:

Xiao Gordon Liu - Fremont CA, US
Weiguo Liu - Sunnyvale CA, US

Assignee:

AXT, Inc.

International Classification:

C30B035/00
C30B001/00

US Classification:

117/200000, 117/900000

Abstract:

An apparatus for producing large diameter monocrystalline Group III-V, II-VI compounds that have reduced crystal defect density, improved crystal growth yield, and improved bulk material characteristics. The apparatus comprises a crucible or boat, an ampoule that contains the crucible or boat, a heating unit disposed about the ampoule, and a liner disposed between the heating unit and the ampoule. The liner is preferably composed of a quartz material. When the liner and the ampoule are made of the same material, such as quartz, the thermal expansion coefficients of the liner and ampoule are the same, which significantly increases the lifetime of the liner and the single-crystal yield.

US Patent:

20040173140, Sep 9, 2004

Filed:

Mar 5, 2003

Appl. No.:

10/378991

Inventors:

Xiao Liu - Fremont CA, US
Morris Young - Fremont CA, US

International Classification:

C30B009/00
C30B011/00
C30B017/00
C30B021/02
C30B028/06

US Classification:

117/081000, 117/083000

Abstract:

An apparatus and a method for growth of Group III-V monocrystalline semiconductor compounds in a closed system with a balanced pressure maintained between the inside of a sealed ampoule and a pressure vessel. The vapor pressure inside the sealed ampoule can be controlled by temperature, the amount of polycrystalline charge and an amount of material such as phosphorus inside the sealed ampoule. Filling and release of an inert gas is used to control the pressure in the pressure vessel.

US Patent:

20230092789, Mar 23, 2023

Filed:

Sep 21, 2021

Appl. No.:

17/481025

Inventors:

- Cupertino CA, US
Brian K. Shiu - Sunnyvale CA, US
Michael P. Zhang - Fremont CA, US
Xiao Liu - San Jose CA, US
Christopher R. Pasma - Redwood City CA, US
Steven M. Labovitz - Sunnyvale CA, US
Katharine R. Chemelewski - Campbell CA, US
Erik D. Gillow - Redwood City CA, US
Joshua Walter - Cupertino CA, US
Junhua Liu - Hayward CA, US
Michael H. Tsai - San Jose CA, US
Stephan P. Abdo - San Francisco CA, US

Assignee:

Apple Inc. - Cupertino CA

International Classification:

H01M 50/284
H01M 50/531
H01M 50/107

Abstract:

Battery systems according to embodiments of the present technology may include a battery including a first electrode terminal and a second electrode terminal accessible along a first surface of the battery. The battery may define a recessed portion of the battery along the first surface of the battery between the first electrode terminal and the second electrode terminal. The battery systems may include a module electrically coupled with the battery. The module may include a circuit board. The module may include a first conductive tab extending from a second surface of the circuit board opposite the first surface of the circuit board. The first conductive tab may be electrically coupling the module with the first electrode terminal. The module may include a second conductive tab extending from the second surface of the circuit board. The second conductive tab may be electrically coupling the module with the second electrode terminal.