Xiao Mi

US Patent:

20210304054, Sep 30, 2021

Filed:

Mar 31, 2021

Appl. No.:

17/218690

Inventors:

- Mountain View CA, US
Vadim Smelyanskiy - Mountain View CA, US
Yu Chen - Goleta CA, US
Xiao Mi - Goleta CA, US
Yuezhen Niu - El Segundo CA, US
Kostyantyn Yevgenovych Kechedzhi - Santa Monica CA, US
Alexander Nikolaevich Korotkov - Riverside CA, US
Zhang Jiang - El Segundo CA, US

International Classification:

G06N 10/00
G06F 15/16

Abstract:

Systems and methods for composite quantum gate calibration for a quantum computing system are provided. In some implementations, a method includes accessing a unitary gate model describing a composite quantum gate. The unitary gate model includes a plurality of gate parameters. The method includes implementing the composite quantum gate for a plurality of gate cycles on the quantum system to amplify the plurality of gate parameters. The method includes obtaining a measurement of a state of the quantum system after implementing the composite quantum gate for the plurality of gate cycles. The method includes determining at least one of the plurality of gate parameters based at least in part on the measurement of the state of the quantum system. The method includes calibrating the composite quantum gate for the quantum computing system based at least in part on the plurality of gate parameters.

US Patent:

20210028344, Jan 28, 2021

Filed:

Jul 23, 2020

Appl. No.:

16/937330

Inventors:

- Princeton NJ, US
Stefan Putz - Princeton NJ, US
Xiao Mi - Princeton NJ, US

International Classification:

H01L 39/22
G06N 10/00

Abstract:

Methods, devices, and systems are described for performing quantum operations. An example device at least one magnetic field source configured to supply an inhomogeneous magnetic field, at least one semiconducting layer, and one or more conducting layers configured to: define at least two quantum states in the at least one semiconducting layer, and cause, based on an oscillating electrical signal supplied by the one or more conducting layers, an electron to move back and forth between the at least two quantum states in the presence of the inhomogeneous magnetic field. The movement of the electron between the at least two quantum states may generate an oscillating magnetic field to drive a quantum transition between a spin-up state and spin-down state of the electron thereby implementing a qubit gate on a spin state of the electron.

US Patent:

20200052101, Feb 13, 2020

Filed:

Aug 7, 2019

Appl. No.:

16/534431

Inventors:

- Princeton NJ, US
Xiao Mi - Princeton NJ, US
David Zajac - Gibsonia PA, US

International Classification:

H01L 29/66
G06N 10/00

Abstract:

Methods, devices, and systems are described for storing and transferring quantum information. An example device may comprise at least one semiconducting layer, one or more conducting layers configured to define at least two quantum states in the at least one semiconducting layer and confine an electron in or more of the at least two quantum states, and a magnetic field source configured to generate an inhomogeneous magnetic field. The inhomogeneous magnetic field may cause a first coupling of an electric charge state of the electron and a spin state of the electron. The device may comprise a resonator configured to confine a photon. An electric-dipole interaction may cause a second coupling of an electric charge state of the electron to an electric field of the photon.