Xiaoping Li from 2 Stoneyside Ln, Saint Louis, MO 63132, age 59

Us Patents

Multi-Layer Superconductor Having Buffer Layer With Oriented Termination Plane
view source
US Patent:

6537689, Mar 25, 2003
Filed:

Nov 26, 2001
Appl. No.:

09/995420
Inventors:

Suresh Annavarapu - Brookline MA
Martin W. Rupich - Framingham MA
Xiaoping Li - Westborough MA
Wei Zhang - Shrewsbury MA
Edward J. Siegal - Malden MA
Qi Li - Marlborough MA
Assignee:

American Superconductor Corporation - Westborough MA
International Classification:

C09K 1900
US Classification:

428701, 428930, 505237, 505238
Abstract:

The invention relates to multi-layer articles and methods of making such articles. The multi-layer superconductors can have one or more layers with an oriented termination plane. The methods include first conditioning the termination plane of an underlying layer, such as a buffer layer or a superconductor layer, then disposing a layer of material on the conditioned termination plane. The conditioned termination plane can be a high quality termination plane. Superconductor articles formed by these methods can exhibit relatively high critical current densities.

Thick Superconductor Films With Improved Performance
view source
US Patent:

7622424, Nov 24, 2009
Filed:

Sep 30, 2005
Appl. No.:

11/241636
Inventors:

Xiaoping Li - Westborough MA, US
Thomas Kodenkandath - N. Grafton MA, US
Edward J. Siegal - Malden MA, US
Wei Zhang - Shrewsbury MA, US
Martin W. Rupich - Framingham MA, US
Yibing Huang - Northborough MA, US
Assignee:

American Superconductor Corporation - Westborough MA
International Classification:

H01B 12/00
US Classification:

505235, 505123, 505238
Abstract:

A method for producing a thick film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt, and wherein the ratio of the transition metal to the alkaline earth metal is greater than 1. 5. The precursor solution is treated to form a rare earth-alkaline earth-metal transition metal oxide superconductor film having a thickness greater than 0. 8 μm. precursor solution.

High Temperature Superconductors Having Planar Magnetic Flux Pinning Centers And Methods For Making The Same
view source
US Patent:

7902120, Mar 8, 2011
Filed:

Jul 23, 2007
Appl. No.:

11/880533
Inventors:

Martin W. Rupich - Framingham MA, US
Wei Zhang - Shrewsbury MA, US
Yibing Huang - Northborough MA, US
Xiaoping Li - Westborough MA, US
Assignee:

American Superconductor Corporation - Devens MA
International Classification:

H01B 12/00
H01B 13/00
US Classification:

505500, 505230, 505231, 505237, 505238, 505430, 505431, 505482, 505742, 428701, 428702, 428930, 1741251, 29599
Abstract:

Superconductor wires or layers having improved properties and methods for making the same are described. The superconducting layer includes a rare earth element-alkaline earth element-transition metal oxide having an average stacking fault density that is greater than about 0. 01 nm, wherein two or more rare earth cations form the rare earth element. To form the superconductor layer of the present invention, a layer having a rare earth element-alkaline earth element-transition metal oxide substantially in a first crystal structure can be provided to a substrate where two or more rare earth cations form the rare earth element. The layer can then be heated at a temperature that is greater than 550 C. under oxidizing conditions to form a high-temperature superconducting layer substantially in a second crystal structure.

Thick Superconductor Films With Improved Performance
view source
US Patent:

8354136, Jan 15, 2013
Filed:

Nov 24, 2009
Appl. No.:

12/624859
Inventors:

Xiaoping Li - Westborough MA, US
Thomas Kodenkandath - N. Grafton MA, US
Edward J. Siegal - Malden MA, US
Wei Zhang - Shrewsbury MA, US
Martin W. Rupich - Framingham MA, US
Yibing Huang - Northborough MA, US
Assignee:

American Superconductor Corporation - Devens MA
International Classification:

B05D 5/12
H01L 39/24
US Classification:

427 62, 29599, 505430, 505434, 505470
Abstract:

A method for producing a thick film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt, and wherein the ratio of the transition metal to the alkaline earth metal is greater than 1. 5. The precursor solution is treated to form a rare earth-alkaline earth-metal transition metal oxide superconductor film having a thickness greater than 0. 8 μm. precursor solution.

Deposition Of Buffer Layers On Textured Metal Surfaces
view source
US Patent:

7261776, Aug 28, 2007
Filed:

Mar 30, 2004
Appl. No.:

10/812676
Inventors:

Martin W. Rupich - Framingham MA, US
Darren Verebelyi - Oxford MA, US
Thomas Kodenkandath - North Grafton MA, US
Xiaoping Li - Westborough MA, US
Assignee:

American Superconductor Corporation - Westborough MA
International Classification:

C30B 29/16
US Classification:

117 89, 117 90, 117 91, 505929
Abstract:

A method of making a multilayer article includes depositing a first material on the surface of a metal substrate to form a seed layer of the first material, the first material being deposited under reducing conditions relative to the metal substrate, and then epitaxially depositing a second material on a surface of the seed layer, wherein the second material is deposited from a solution-based precursor under second conditions that are more oxidizing than the reducing conditions used in the deposition of the first material.

Superconductor Methods And Reactors
view source
US Patent:

20050065035, Mar 24, 2005
Filed:

Jun 1, 2004
Appl. No.:

10/858309
Inventors:

Martin Rupich - Framingham MA, US
Darren Verebelyi - Oxford MA, US
Xiaoping Li - Westborough MA, US
Wei Zhang - Shrewsbury MA, US
Joseph Lynch - Medford MA, US
International Classification:

B05D005/12
US Classification:

505300000, 427248100
Abstract:

Superconductor reactors, methods and systems are disclosed.

Oxide Films With Nanodot Flux Pinning Centers
view source
US Patent:

20050159298, Jul 21, 2005
Filed:

Jan 16, 2004
Appl. No.:

10/758710
Inventors:

Martin Rupich - Framingham MA, US
Thomas Kodenkandath - N. Grafton MA, US
Wei Zhang - Shrewsbury MA, US
Xiaoping Li - Westborough MA, US
International Classification:

B01J029/00
US Classification:

502100000
Abstract:

A method for producing a thin film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt. The precursor solution also contains an additive component comprising one or more metal compounds capable of forming a second phase nanoparticle, either alone or in combination with one or more of the precursor components of the precursor solution or a dopant component comprising one or more metal compounds capable of substituting for an element of the rare-earth/alkaline-earth-metal/transition-metal oxide, and treating the precursor film to form an intermediate metal oxyfluoride including the rare earth, the alkaline earth metal, the transition metal and the additive metal or dopant metal of the precursor solution.

Oxide Films With Nanodot Flux Pinning Centers
view source
US Patent:

20100048406, Feb 25, 2010
Filed:

Dec 30, 2008
Appl. No.:

12/346421
Inventors:

Martin W. RUPICH - Framingham MA, US
Thomas KODENKANDATH - N. Grafton MA, US
Wei ZHANG - Shrewsbury MA, US
Xiaoping LI - Westborough MA, US
Assignee:

AMERICAN SUPERCONDUCTOR CORPORATION - Westborough MA
International Classification:

H01L 39/02
H01L 39/24
US Classification:

505238, 505470, 505150, 427 62, 428699, 428701
Abstract:

A method for producing a thin film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt. The precursor solution also contains an additive component comprising one or more metal compounds capable of forming a second phase nanoparticle, either alone or in combination with one or more of the precursor components of the precursor solution or a dopant component comprising one or more metal compounds capable of substituting for an element of the rare-earth/alkaline-earth-metal/transition-metal oxide, and treating the precursor film to form an intermediate metal oxyfluoride including the rare earth, the alkaline earth metal, the transition metal and the additive metal or dopant metal of the precursor solution.