Xiaoping P Yang

US Patent:

8445941, May 21, 2013

Filed:

Aug 5, 2009

Appl. No.:

12/462515

Inventors:

Dong Xu - Nashua NH, US
Xiaoping S. Yang - Nashua NH, US
Wendell Kong - Hollis NH, US
Lee M. Mohnkern - Bedford NH, US
Phillip M. Smith - Hollis NH, US
Pane-chane Chao - Nashua NH, US

Assignee:

BAE Systems Information and Electronic Systems Integration Inc. - Nashua NH

International Classification:

H01L 21/335
H01L 29/778

US Classification:

257194, 257183, 257E21403, 257E29246

Abstract:

A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3. 5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.

US Patent:

20070141594, Jun 21, 2007

Filed:

Oct 11, 2006

Appl. No.:

11/546019

Inventors:

Biao Luo - Lexington MA, US
David Root - Brookline MA, US
Xiaoping Yang - Brookline MA, US
Gregory Hinkle - Plymouth MA, US

International Classification:

C40B 40/08
C40B 50/06

US Classification:

435006000, 435091200

Abstract:

Described herein is a method of cloning synthetic oligos (including in situ synthesized oligos) into an (one or more) expression vector for library (e.g., shRNA library) production. The oligos are synthesized with one portion of the first stem of the hairpin, followed by a first loop sequence, the complete second stem, a second loop sequence, and finished with the remaining portion of the first stem of the hairpin. The two portions of the first stem anneal to the second stem, juxtaposing the 5′ end close to the 3′ end of the oligo. The methods described herein selected for hairpins with perfectly base-paired stems. After annealing, a ligase is added to the annealed oligos and the base-paired hairpins are preferentially annealed, and ligated, creating closed circular oligos. The now circularized hairpins served as templates for rolling circle amplification using a polymerase with high processivity. One or more primers complementary to the two strands of the amplified double stranded circular hairpins initiate the rolling circle amplification in the presence of a polymerase. Using primers (e.g., a sense and antisense primer), the rolling circle amplification yields double stranded hairpin sequences. These can be digested (e.g., using restriction enzymes) to produce a double-stranded hairpin fragment encoding a single hairpin. The fragment can be cloned into an appropriately digested vector for a variety of uses including expression.

US Patent:

20130230951, Sep 5, 2013

Filed:

Apr 10, 2013

Appl. No.:

13/860190

Inventors:

BAE Systems Information and Electronics Systems Integration Inc. - , US
Xiaoping S. Yang - Nashua NH, US
Wendell Kong - Hollis NH, US
Lee M. Mohnkern - Bedford NH, US
Phillip M. Smith - Hollis NH, US
Pane-chane Chao - Nashua NH, US

Assignee:

BAE Systems Information and Electronics Systems Integration inc. - Nashua NH

International Classification:

H01L 29/66

US Classification:

438172

Abstract:

A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.