Xiaowei Li

US Patent:

7682940, Mar 23, 2010

Filed:

Sep 14, 2005

Appl. No.:

11/227974

Inventors:

Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/20
H01L 21/36

US Classification:

438478, 438482, 438488, 438719, 438753, 257E2109, 257E21115, 257E21461, 257E21214, 257E21215

Abstract:

In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.

US Patent:

7732305, Jun 8, 2010

Filed:

Jul 28, 2006

Appl. No.:

11/494903

Inventors:

Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/20

US Classification:

438478, 438488, 438719, 438753, 257E23116, 257E23128, 257E21502

Abstract:

In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

US Patent:

7960256, Jun 14, 2011

Filed:

May 12, 2010

Appl. No.:

12/779022

Inventors:

Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/20
H01L 21/36

US Classification:

438478, 438482, 438488, 438719, 438753, 257E31045, 257E29155, 257E23122, 257E21054, 257E21055, 257E21182

Abstract:

In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

US Patent:

7976634, Jul 12, 2011

Filed:

Nov 8, 2007

Appl. No.:

11/937388

Inventors:

David Keith Carlson - San Jose CA, US
Satheesh Kuppurao - San Jose CA, US
Howard Beckford - San Jose CA, US
Herman Diniz - Fremont CA, US
Kailash Kiran Patalay - Santa Clara CA, US
Brian Hayes Burrows - San Jose CA, US
Jeffrey Ronald Campbell - San Francisco CA, US
Xiaowei Li - Austin TX, US
Errol Antonio Sanchez - Tracy CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/452
C23C 16/46
C23C 16/02
C23F 1/00
H01L 21/306
C23C 16/06

US Classification:

118724, 1563451

Abstract:

A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.

US Patent:

8586456, Nov 19, 2013

Filed:

May 31, 2011

Appl. No.:

13/149865

Inventors:

Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/24
H01L 21/20
H01L 21/36

US Classification:

438488, 438719, 438753, 257E23116, 257E23128, 257E21502, 257E2109

Abstract:

In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

US Patent:

20200226150, Jul 16, 2020

Filed:

Jan 16, 2019

Appl. No.:

16/249788

Inventors:

- San Francisco CA, US
Xiaowei Li - San Carlos CA, US
Vitaliy Stulski - Los Gatos CA, US
Daniel Wolf - Menlo Park CA, US

International Classification:

G06F 16/28
G01C 21/32
G06F 16/22
G06F 16/29

Abstract:

A computing system uses tree data structures summarizing map builds to identify differences between map builds. The tree data structures include nodes summarizing portions of geographic regions of map builds. Responsive to a request to compare a first and second map build, the computing system accesses the tree data structures for the first and second map builds and identifies differences by traversing the tree data structures in lockstep and comparing the hash values for corresponding nodes in the tree data structures. The computing system traverses the tree data structures by identifying nodes that are different between the tree data structures until one or more bottom-level nodes are identified as different. The computing system identifies map features corresponding to the identified bottom-level nodes as different and transmits the identified map features to a client device associated with the request.

US Patent:

20170362702, Dec 21, 2017

Filed:

Mar 3, 2014

Appl. No.:

14/195423

Inventors:

- Santa Clara CA, US
Satheesh KUPPURAO - San Jose CA, US
Howard BECKFORD - Santa Clara CA, US
Herman DINIZ - Fremont CA, US
Kailash Kiran PATALAY - Santa Clara CA, US
Brian Hayes BURROWS - San Jose CA, US
Jeffery Ronald CAMPBELL - Mountain View CA, US
Zuoming ZHU - Sunnyvale CA, US
Xiaowei LI - Austin TX, US
Errol Antonio SANCHEZ - Tracy CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/455
C23C 16/22
C23C 16/452
H01L 21/02

Abstract:

In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

US Patent:

20170241764, Aug 24, 2017

Filed:

Dec 28, 2015

Appl. No.:

14/980215

Inventors:

- Milpitas CA, US
Xuan Zhao - Milpitas CA, US
Xiaowei Li - Milpitas CA, US

International Classification:

G01B 9/02
G01B 11/06

Abstract:

A wafer metrology system includes an interferometer sub-system and a controller. The interferometer sub-system is configured to generate an interferogram with an intensity map that corresponds to a modulated representation of a wafer surface. Further, the interferometer sub-system includes a detector configured to capture the interferogram. The controller includes one or more processors configured to generate a wrapped phase map of the interferogram, define patterns associated with features on the wafer, and correct phase discontinuities by applying a phase unwrapping procedure to the wrapped phase map to generate an unwrapped phase map and correcting phase discontinuities in the unwrapped phase map based on the patterns, or by combining phase unwrapping and correction in a unified step. Further, the patterns comprise two or more structures such that a portion of the unwrapped phase map associated with structures of the same type is continuous across borders separating structures of the same type.