Search

Xin C Zhang

age ~41

from Allen, TX

Also known as:
  • Xi N Zhang

Xin Zhang Phones & Addresses

  • Allen, TX
  • Azusa, CA
  • Plano, TX
  • Dallas, TX
  • Desoto, TX
  • Monterey Park, CA
  • Arlington, TX
  • Alhambra, CA
  • Mansfield, TX
  • Azusa, CA

Lawyers & Attorneys

Xin Zhang Photo 1

Xin Zhang - Lawyer

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Address:
Broad & Bright
(108)5131808 (Office)
Licenses:
New York - Currently registered 2002
Education:
Columbia
Xin Zhang Photo 2

Xin Zhang - Lawyer

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ISLN:
922988210
Admitted:
2014
University:
Northwestern University School of Law Chicago
Law School:
Northwestern University School of Law, J.D., 2014; Shandong University, LL.B., 2009; Wake Forest University School of Law, LL.M., 2010

License Records

Xin Zhang

License #:
067950 - Expired
Category:
Real Estate
Type:
Salesperson

Xin Zhang

License #:
067950 - Expired
Category:
Real Estate
Type:
Salesperson

Xin Zhang

License #:
3514 - Active
Category:
Physical Therapy
Issued Date:
Jul 29, 2015
Effective Date:
Jul 29, 2015
Expiration Date:
Nov 1, 2017
Type:
Physical Therapist

Xin Zhang

Phone:
(830)6207422 (Work)
License #:
32183 - Expired
Category:
Physical Medicine & Rehabilitation
Type:
Private Practice

Medicine Doctors

Xin Zhang Photo 3

Dr. Xin Zhang - MD (Doctor of Medicine)

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Hospitals:
6250 Clay St, Riverside, CA 92509

Parkview Community Hospital Medical Center
3865 Jackson Street, Riverside, CA 92503
Education:
Medical Schools
Szechwan Medical College
Graduated: 1994
Xin Zhang Photo 4

Xin Hong Zhang

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Specialties:
Neurology
Work:
Veterans Affairs Medical Center Neurology
1500 E Woodrow Wilson Ave STE 127, Jackson, MS 39216
(601)3641285 (phone), (601)3641257 (fax)
Education:
Medical School
Beijing Med Univ, Beijing City, Beijing, China
Graduated: 1992
Procedures:
Lumbar Puncture
Neurological Testing
Conditions:
Parkinson's Disease
Alzheimer's Disease
Bell's Palsy
Carpel Tunnel Syndrome
Dementia
Languages:
English
Description:
Dr. Zhang graduated from the Beijing Med Univ, Beijing City, Beijing, China in 1992. She works in Jackson, MS and specializes in Neurology. Dr. Zhang is affiliated with GV Sonny Montgomery VA Medical Center.
Xin Zhang Photo 5

Xin A. Zhang

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Specialties:
Internal Medicine
Work:
Riverside Medical Clinic
6250 Clay St, Riverside, CA 92509
(951)3605265 (phone), (951)3606276 (fax)
Education:
Medical School
West China Univ of Med Sci, Chengdu City, Sichuan, China
Graduated: 1994
Procedures:
Arthrocentesis
Destruction of Benign/Premalignant Skin Lesions
Electrocardiogram (EKG or ECG)
Hearing Evaluation
Pulmonary Function Tests
Skin Tags Removal
Vaccine Administration
Conditions:
Abnormal Vaginal Bleeding
Acne
Acute Pharyngitis
Acute Upper Respiratory Tract Infections
Alopecia Areata
Languages:
English
Spanish
Description:
Dr. Zhang graduated from the West China Univ of Med Sci, Chengdu City, Sichuan, China in 1994. She works in Riverside, CA and specializes in Internal Medicine. Dr. Zhang is affiliated with Parkview Community Hospital Medical Center and Riverside Community Hospital.
Xin Zhang Photo 6

Xin Amy Zhang

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Specialties:
Internal Medicine
Geriatric Medicine
General Practice
Education:
Szechwan Medical College (1994)

Resumes

Xin Zhang Photo 7

Xin Zhang San Diego, CA

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Work:
MetroMD
Hollywood, CA
Jul 2012 to Feb 2013
Patient Care Coordinator
Sanford-Burnham Medical Research Institute
La Jolla, CA
Oct 2011 to Jul 2012
Research Technician
Chemistry
Riverside, CA
Sep 2009 to Jun 2010
Supplemental Instruction Leader
Indiana University School of Medicine
Indianapolis, IN
Jul 2009 to Sep 2009
Undergraduate Research Intern
Education:
University of California
Riverside, CA
Sep 2007 to Jun 2011
B.S. in Neuroscience
Xin Zhang Photo 8

Xin Zhang San Dimas, CA

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Work:
E-Club

Jan 2011 to Aug 2011
Member of Entrepreneur Club
China Mobile Limited
Zhumadian, CN
Sep 2009 to Jul 2010
Market Research Assistant
SIAS International University
Zhengzhou, CN
Nov 2008 to Jul 2009
International Program Administrative Assistant
SIAS International University
Zhengzhou, CN
Sep 2007 to Sep 2008
Leader of Publicity Office
Education:
University of La Verne
La Verne, CA
Aug 2012
Master of Business Administration in Marketing & Supply Chain Management
SIAS International University
Zhengzhou, CN
Jun 2010
Bachelor of Arts in Business English
Fort Hays State University
Hays, KS
Jun 2010
Bachelor of General Studies
Academic Debate Competition in SIAS International University Honored Scholarship of SIAS International University in two consecutive academic year Best debater of Academic Debate Competition in SIAS International University
Skills:
Sales Marketing Communications ,Market Research, Bilingual ,Multi Tasking ,Fast Learner ,International Marketing,Supply Chain Management,Public Relations ,Microsoft Office,Problem Solving
Xin Zhang Photo 9

Xin Zhang New York, NY

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Work:
Columbia University

Sep 2011 to 2000
Team Member
Sexual Violence Prevention & Response Program

Jun 2011 to 2000
Double Discovery Center College Preparation, Teaching Assistant and Tutor
Columbia Child Rights

Sep 2010 to 2000
Treasurer
Sexual Violence Prevention & Response Program

Aug 2009 to 2000
New Student Orientation Program Team Leader
Dr. Helen H. Lu's Biomaterials & Tissue Interface Engineering Research Group, Columbia University

Mar 2009 to 2000
Research Assistant
Dr. Helen H. Lu's Biomaterials & Tissue Interface Engineering Research Group, Columbia University
Long Beach, CA
2011 to 2011
Academic Associates Program, St. Luke's Hospital Emergency Department
New York, NY
Jun 2009 to Jun 2010
Research Assistant
Dr. Helen H. Lu's Biomaterials & Tissue Interface Engineering Research Group, Columbia University
Seattle, WA
2010 to 2010
Education:
Columbia University
New York, NY
2008 to 2012
BSc in Biomedical Engineering
Old Scona Academic High School
Edmonton, AB
2005 to 2008
Diploma
Xin Zhang Photo 10

Xin Zhang Los Angeles, CA

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Work:
Vantage Point Global Inc
Santa Monica, CA
Sep 2011 to Nov 2011
Web Development Intern
Xenon Projection Inc
El Monte, CA
Jun 2011 to Aug 2011
Web Development Intern
Nokia

Jun 2010 to Aug 2010
Software Development Intern
Education:
Beijing University of Posts and Telecommunications
2006 to 2010
Bachelor of Engineering in Computer Engineering
University of Southern California
Los Angeles, CA
Master of Science in Electrical Engineering
Name / Title
Company / Classification
Phones & Addresses
Xin Yuan Zhang
President
New Artists Inc
832 S Sierra Vis Ave, Alhambra, CA 91801
9420 Telstar Ave, El Monte, CA 91731
Xin Wen Zhang
President
New Century Trading Company, Inc
350 S Figueroa St, Los Angeles, CA 90071
Xin Zhang
President
New Port Auto, Inc
1920 E Calico Dr, West Covina, CA 91791
Xin Zhang
President
Byit Technology (USA) Inc
Commercial Physical Research · Nonclassifiable Establishments
611 Wilshire Blvd, Los Angeles, CA 90017
100 N Citrus St, West Covina, CA 91791
Xin Zhang
President
ABP (A BETTER PICTURE) ENTERTAINMENT INC
Entertainer/Entertainment Group
330 Turnbull Cyn Rd, Hacienda Heights, CA 91745
2880 S 10 Ave, Arcadia, CA 91006
330 Turnbull Cyn Rd, Whittier, CA 91745
Xin Zhang
President
MWINS CORP
Business Services at Non-Commercial Site · Nonclassifiable Establishments
1741 Tamarron Dr, Corona, CA 92883
Xin Zhang
Director
USEX (DALLAS) INC
151 W Spg Crk Pkwy STE 523, Plano, TX 75023
Xin Zhang
President, Principal
Great Wonders International Travel, Inc
Travel Agencies, Nsk · Travel Agency
19458 Rockledge Ln, Walnut, CA 91789

Isbn (Books And Publications)

Social Transformation in Modern China: The State and Local Elites in Henan, 1900-1937

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Author
Xin Zhang

ISBN #
0521027551

Social Transformation in Modern China: The State and Local Elites in Henan, 1900-1937

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Author
Xin Zhang

ISBN #
0521642892

Vehicle Records

  • Xin Zhang

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  • Address:
    5941 Glendower Ln, Plano, TX 75093
  • VIN:
    5FNYF4H45BB094509
  • Make:
    HONDA
  • Model:
    PILOT
  • Year:
    2011

Us Patents

  • Methods And Apparatus For Improved Mosfet Drain Extension Activation

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  • US Patent:
    6797593, Sep 28, 2004
  • Filed:
    Sep 13, 2002
  • Appl. No.:
    10/243610
  • Inventors:
    Srinivasan Chakravarthi - Richardson TX
    Amitabh Jain - Richardson TX
    Xin Zhang - Plano TX
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 21425
  • US Classification:
    438514, 438530, 438527
  • Abstract:
    Methods are described for fabricating MOS type transistors, in which multiple drain extension implants are performed using different dopant species of the same type. The implanted drain extension dopants are activated using separate anneal processes to provide active dopants of both species throughout the drain extension regions adjacent the transistor channel.
  • Semiconductor Device Having Optimized Shallow Junction Geometries And Method For Fabrication Thereof

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  • US Patent:
    7033879, Apr 25, 2006
  • Filed:
    Apr 29, 2004
  • Appl. No.:
    10/835121
  • Inventors:
    Brian E. Hornung - Richardson TX, US
    Xin Zhang - Plano TX, US
    Lance S. Robertson - Rockwall TX, US
    Srinivasan Chakravarthi - Richardson TX, US
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 21/8238
    H01L 21/336
  • US Classification:
    438231, 438302, 438233
  • Abstract:
    The present invention provides, in one embodiment, a method of fabricating a semiconductor device (). The method comprises growing an oxide layer () on a gate structure () and a substrate () and implanting a dopant () into the substrate () and the oxide layer (). Implantation is such that a portion of the dopant () remains in the oxide layer () to form an implanted oxide layer (). The method further includes depositing a protective oxide layer () on the implanted oxide layer () and forming etch-resistant off-set spacers (). The etch-resistant off-set spacers () are formed adjacent sidewalls of the gate structure () and on the protective oxide layer (). The etch resistant off-set spacers having an inner perimeter () adjacent the sidewalls and an opposing outer perimeter (). The method also comprises removing portions of the protective oxide layer () lying outside the outer perimeter () of the etch-resistant off-set spacers (). Other embodiments of the present invention include a transistor device () and method of manufacturing an integrated circuit ().
  • Cost Effective Split-Gate Process That Can Independently Optimize The Low Voltage(Lv) And High Voltage (Hv) Transistors To Minimize Reverse Short Channel Effects

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  • US Patent:
    20020052083, May 2, 2002
  • Filed:
    Oct 4, 2001
  • Appl. No.:
    09/971198
  • Inventors:
    Xin Zhang - Plano TX, US
    Douglas Grider - McKinney TX, US
    Jarvis Jacobs - Richardson TX, US
    Howard Tigelaar - Allen TX, US
  • International Classification:
    H01L021/8234
  • US Classification:
    438/275000
  • Abstract:
    A method of forming LV and HV transistors with independently optimized threshold adjust (Vt) implants to minimize reverse short channel effects. A through-the-poly implant is used for the Vt implants after gate () formation. The Vt implants for the LV transistors () are performed after the LDD patterns (). The Vt implants for the HV transistors () are performed after the I/O LDD patterns ().
  • Semiconductor Device Having Optimized Shallow Junction Geometries And Method For Fabrication Thereof

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  • US Patent:
    20060001105, Jan 5, 2006
  • Filed:
    Jul 12, 2005
  • Appl. No.:
    11/179210
  • Inventors:
    Brian Hornung - Richardson TX, US
    Xin Zhang - Plano TX, US
    Lance Robertson - Rockwall TX, US
    Srinivasan Chakravarthi - Richardson TX, US
    P. Chidambaram - Richardson TX, US
  • International Classification:
    H01L 29/76
  • US Classification:
    257368000
  • Abstract:
    The present invention provides, in one embodiment, a method of fabricating a semiconductor device (). The method comprises growing an oxide layer () on a gate structure () and a substrate () and implanting a dopant () into the substrate () and the oxide layer (). Implantation is such that a portion of the dopant () remains in the oxide layer () to form an implanted oxide layer (). The method further includes depositing a protective oxide layer () on the implanted oxide layer () and forming etch-resistant off-set spacers (). The etch-resistant off-set spacers () are formed adjacent sidewalls of the gate structure () and on the protective oxide layer (). The etch resistant off-set spacers having an inner perimeter () adjacent the sidewalls and an opposing outer perimeter (). The method also comprises removing portions of the protective oxide layer () lying outside the outer perimeter () of the etch-resistant off-set spacers (). Other embodiments of the present invention include a transistor device () and method of manufacturing an integrated circuit ().
  • N-Type Transistor With Antimony-Doped Ultra Shallow Source And Drain

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  • US Patent:
    20060017079, Jan 26, 2006
  • Filed:
    Jul 21, 2004
  • Appl. No.:
    10/896421
  • Inventors:
    Srinivasan Chakravarthi - Murphy TX, US
    Amitabh Jain - Allen TX, US
    Xin Zhang - Plano TX, US
  • International Classification:
    H01L 29/76
    H01L 21/425
    H01L 31/117
    H01L 21/44
  • US Classification:
    257288000, 438514000, 438660000, 257616000
  • Abstract:
    We disclose a process for forming ultra shallow np junctions. The junction is formed by, for example, implanting 3E14 ions/cmof antimony ions at 5 keV into silicon. The silicon is pre-amorphized by a previous ion-implantation. The pre-amorphizing implant species may be germanium or arsenic. Germanium may be implanted at 15 keV and Arsenic may be implanted at 2 keV. Both the pre-amorphizing implant and the antimony implant are preferably through bare silicon surface—not covered with any foreign material with the exception of possibly a layer of native oxide. The junction is annealed at about 950 C. following the implants to re-crystallize the implanted region and to activate the implanted ions. The ultra shallow junction is superior because it has a abrupt junction, high sheet resistance and can be formed with low thermal budget.
  • Method For Forming Low Compressive Stress Fluorinated Ozone/Teos Oxide Film

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  • US Patent:
    61211648, Sep 19, 2000
  • Filed:
    Oct 24, 1997
  • Appl. No.:
    8/957058
  • Inventors:
    Ellie Yieh - Millbrae CA
    Xin Zhang - Plano TX
    Bang Nguyen - Fremont CA
    Stuardo Robles - Sunnyvale CA
    Peter Lee - Fremont CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    H01L 2131
    H01L 21469
  • US Classification:
    438790
  • Abstract:
    A method and apparatus for forming a halogen-doped silicon oxide film, preferably a fluorinated silicon glass (FSG) film, having compressive stress less than about -5. times. 10. sup. 8 dynes/cm. sup. 2. In a specific embodiment, the FSG film is formed by a sub-atmospheric CVD thermal process at a pressure of between about 60-650 torr. The relatively thin film, besides having a low dielectric constant and good gap fill capability, has low compressive stress, and is particularly suitable for use as an intermetal (IMD) layer.
  • Lighting Systems Generating Partially-Collimated Light Emissions

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  • US Patent:
    20220252239, Aug 11, 2022
  • Filed:
    Feb 24, 2022
  • Appl. No.:
    17/652396
  • Inventors:
    - Los Angeles CA, US
    Paul Pickard - Acton CA, US
    Sana Ashraf - Glendale CA, US
    Xin Zhang - Los Angeles CA, US
    Richard Wu - Morgan Hill CA, US
    Raghuram L.V. Petluri - Cerritos CA, US
  • International Classification:
    F21V 7/04
    F21V 5/10
    F21V 9/38
    F21V 13/14
  • Abstract:
    Lighting system including bowl reflector, visible-light source, central reflector, and optically-transparent body. Bowl reflector has central axis, and rim defining emission aperture, and first visible-light-reflective surface defining portion of cavity in bowl reflector. First visible-light-reflective surface includes parabolic surface. Visible-light source is located in cavity and configured for generating visible-light emissions from semiconductor light-emitting device. Central reflector includes second visible-light-reflective surface, having convex flared funnel shape and having first peak facing toward visible-light source. Optically-transparent body has first base being spaced apart from second base and having side wall extending between first and second bases. Concave flared funnel-shaped surface of second base faces toward convex flared funnel-shaped second visible-light reflective surface of central reflector. First base includes central region having convex paraboloidal-shaped surface and second peak facing toward visible-light source.
  • Lighting Systems Generating Partially-Collimated Light Emissions

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  • US Patent:
    20210207787, Jul 8, 2021
  • Filed:
    Oct 11, 2020
  • Appl. No.:
    17/067744
  • Inventors:
    - Los Angeles CA, US
    Elizabeth Rodgers - Long Beach CA, US
    Paul Pickard - Acton CA, US
    Sana Ashraf - Glendale CA, US
    Xin Zhang - Los Angeles CA, US
    Richard Wu - Morgan Hill CA, US
    Raghuram L.V. Petluri - Cerritos CA, US
  • International Classification:
    F21V 7/04
    F21V 5/10
    F21V 9/38
    F21V 13/14
  • Abstract:
    Lighting system including bowl reflector, visible-light source, central reflector, and optically-transparent body. Bowl reflector has central axis, and rim defining emission aperture, and first visible-light-reflective surface defining portion of cavity in bowl reflector. First visible-light-reflective surface includes parabolic surface. Visible-light source is located in cavity and configured for generating visible-light emissions from semiconductor light-emitting device. Central reflector includes second visible-light-reflective surface, having convex flared funnel shape and having first peak facing toward visible-light source. Optically-transparent body has first base being spaced apart from second base and having side wall extending between first and second bases. Concave flared funnel-shaped surface of second base faces toward convex flared funnel-shaped second visible-light reflective surface of central reflector. First base includes central region having convex paraboloidal-shaped surface and second peak facing toward visible-light source.

Plaxo

Xin Zhang Photo 11

Xin Zhang

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Texas Instruments
Xin Zhang Photo 12

Xin Zhang

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ChinaStatistician at PAREXEL

Myspace

Xin Zhang Photo 13

Xin Zhang

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Locality:
RENO, Nevada
Gender:
Female
Birthday:
1948
Xin Zhang Photo 14

xin zhang

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Locality:
, ???
Gender:
Male
Birthday:
1943
Xin Zhang Photo 15

Xin Zhang

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Locality:
Brisbane/Toowong, Queensland
Gender:
Female
Birthday:
1949

Flickr

Facebook

Xin Zhang Photo 24

Wei Xin Zhang

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Xin Zhang Photo 25

Xin Zhang Zheng

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Xin Zhang Photo 26

Xin Xiu Zhang

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Xin Zhang Photo 27

Hui Xin Zhang

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Xin Zhang Photo 28

Xin Zhe Zhang

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Xin Zhang Photo 29

Xin Zhang Zeck

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Xin Zhang Photo 30

Jia Xin Zhang

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Xin Zhang Photo 31

Ke Xin Zhang

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Classmates

Xin Zhang Photo 32

Xin Zhang

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Schools:
Cherry Creek High School Englewood CO 1976-1980
Community:
Kathy Martin, Marilyn Colussy
Xin Zhang Photo 33

Xin Zhang

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Schools:
Unversity of Ottawa Ottawa Morocco 2004-2008
Community:
Louis Souliere, James Carlin, Roberta Simpson
Xin Zhang Photo 34

SUNY College - Graduate S...

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Graduates:
Xin Zhang (2000-2002),
Alphonso Bonds (1984-1989),
Vincent Quartararo (1987-1989),
Richard Cunningham (1998-2002)

Googleplus

Xin Zhang Photo 35

Xin Zhang

Xin Zhang Photo 36

Xin Zhang

Education:
Ohio State University - Environmental Behavior Studies, Nanjing University - Urban Planning & Design
Tagline:
Just for thoughts flows.
Xin Zhang Photo 37

Xin Zhang

Work:
Leeds University
Education:
Chinese Academy of Sciences, University of Leeds - SPEME
Tagline:
Fighting
Xin Zhang Photo 38

Xin Zhang

Education:
Sydney Faculty of Agriculture, Food and Natural Resources - Resource economics
Relationship:
In_a_relationship
Xin Zhang Photo 39

Xin Zhang

Relationship:
Married
Xin Zhang Photo 40

Xin Zhang

Xin Zhang Photo 41

Xin Zhang

Education:
UCL
Xin Zhang Photo 42

Xin Zhang

Education:
Michigan Technological University - Computer Schience

Youtube

Fareed Zakaria talks to Chinese developer Zha...

  • Category:
    News & Politics
  • Uploaded:
    21 Jun, 2010
  • Duration:
    6m 57s

[SJMSUBS] Yue Ce Yue Kai Xin - Zhang Li Yin o...

Yue Ce Yue Kai Xin - Zhang Li Yin on Super Junior is what the file nam...

  • Category:
    Entertainment
  • Uploaded:
    28 Apr, 2008
  • Duration:
    6m 59s

Kuwait Open: Ma Long Zhang Jike-Wang Liqin Xu...

Your forehand, backhand or service aren't good enough? Take a look at ...

  • Category:
    Sports
  • Uploaded:
    27 Feb, 2010
  • Duration:
    5m 54s

WTTC 2010: Chinese Men Team Warm-Up

Follow "TTProvider" now also on FACEBOOK! www.facebook.com ======= If ...

  • Category:
    Sports
  • Uploaded:
    17 Jun, 2010
  • Duration:
    8m 8s

Qatar Open: Wang Liqin Xu Xin-Ma Lin Zhang Jike

Qatar Open - ITTF Pro Tour , Doha, QAT, Feb 9 - Feb 13. Men's Doubles ...

  • Category:
    Sports
  • Uploaded:
    13 Feb, 2011
  • Duration:
    6m 10s

English Open 2011: Xu Xin/Zhang Jike-Ma Lin/W...

Watch the full match at ittf.com This video is the property of Total S...

  • Category:
    Sports
  • Uploaded:
    04 Feb, 2011
  • Duration:
    4m 43s

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