Xinhui C Wang from 232 Buttonwood Way, East Fishkill, NY 12533, age 59

Us Patents

Technique For Noise Reduction In A Torque-Based Chemical-Mechanical Polishing Endpoint Detection System
view source
US Patent:

6741913, May 25, 2004
Filed:

Dec 11, 2001
Appl. No.:

10/013196
Inventors:

Xinhui Wang - Poughkeepsie NY
Yingru Gu - Poughkeepsie NY
Leping Li - Poughkeepsie NY
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

G05B 1300
US Classification:

700275, 15634513, 451 5
Abstract:

A method is described for noise reduction in a CMP endpoint detection system employing torque measurement. The torque signals are acquired using an adjustable sampling rate and sample size, and averaged using a moving array of adjustable size. By introducing these three adjustable quantities in the torque-based endpoint control algorithm and properly setting their values in the endpoint detection recipe, periodic noise associated with carrier rotation and carrier oscillation can be effectively removed. This in turn permits reliable, closed-loop control of the CMP process.

Endpoint Detection In Chemical-Mechanical Polishing Of Patterned Wafers Having A Low Pattern Density
view source
US Patent:

6835117, Dec 28, 2004
Filed:

Nov 21, 2003
Appl. No.:

10/707120
Inventors:

Xinhui Wang - Poughkeepsie NY
Leping Li - Poughkeepsie NY
Yingru Gu - Pougheepsie NY
Hung-Chin Guthrie - Saratoga CA
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

B24B 4900
US Classification:

451 8, 451 60, 451446
Abstract:

A chemical-mechanical polishing (CMP) system and method includes pumping polishing slurry from a CMP apparatus through a sampling tube to an endpoint detection apparatus during a polishing operation, and flushing the sampling tube while a polishing operation is not in progress. The flushing of the sampling tube is commenced in accordance with a control signal from the endpoint detection apparatus terminating the polishing operation; the flushing is terminated in accordance with a starting signal to the CMP apparatus. The pump, which pumps a sample of slurry into the endpoint detection apparatus, continuously pumps slurry and/or water. Clogging of the slurry sampling tube is thus eliminated, thereby ensuring robust operation of the CMP apparatus. Contamination of the sampling tube is also avoided, so that the system may reliably provide sensitive endpoint detection and process control, even when a film of low pattern density is polished.

Method For Detecting Cmp Endpoint In Acidic Slurries
view source
US Patent:

6878629, Apr 12, 2005
Filed:

Jun 27, 2002
Appl. No.:

10/185818
Inventors:

Leping Li - Poughkeepsie NY, US
Steven G. Barbee - Amenia NY, US
Scott R. Cline - Belle Plaine MN, US
James A. Gilhooly - Saint Albans VT, US
Xinhui Wang - Poughkeepsie NY, US
Cong Wei - Poughkeepsie NY, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L021/302
US Classification:

438692
Abstract:

An apparatus for measuring ammonia gas concentration in an ongoing mechanical polishing (CMP) cycle utilizing an acidic CMP slurry, having the following components:.

Apparatus For Detecting Cmp Endpoint In Acidic Slurries
view source
US Patent:

6899784, May 31, 2005
Filed:

Jun 27, 2002
Appl. No.:

10/185823
Inventors:

Leping Li - Poughkeepsie NY, US
Steven G. Barbee - Amenia NY, US
Scott R. Cline - Belle Plaine MN, US
James A. Gilhooly - Saint Albans VT, US
Walter Imfeld - Zurich, CH
Werner Moser - St. Gallen, CH
Adrian Siegrist - Zurich, CH
Heinz Stunzi - Zurich, CH
Xinhui Wang - Poughkeepsie NY, US
Cong Wei - Poughkeepsie NY, US
Assignee:

International Business Machines Corporation - Armonk NY
EcoPhysics AG - Duernten
International Classification:

B26B001/00
US Classification:

15634516, 451 5, 451 41
Abstract:

An apparatus for measuring ammonia gas concentration in an ongoing chemical mechanical polishing (CMP) cycle utilizing an acidic CMP slurry, having the following components:.

Method For Fabricating An Ultralow Dielectric Constant Material As An Intralevel Or Interlevel Dielectric In A Semiconductor Device And Electronic Device Made
view source
US Patent:

7049247, May 23, 2006
Filed:

May 3, 2004
Appl. No.:

10/838849
Inventors:

Stephen M. Gates - Ossining NY, US
Alfred Grill - White Plains NY, US
David R. Medeiros - Ossining NY, US
Deborah Neumayer - Danbury CT, US
Son Van Nguyen - Yorktown Heights NY, US
Vishnubhai V. Patel - Yorktown Heights NY, US
Xinhui Wang - Poughkeepsie NY, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 21/31
US Classification:

438778, 438780, 438782
Abstract:

A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

Method For Fabricating An Ultralow Dielectric Constant Material As An Intralevel Or Interlevel Dielectric In A Semiconductor Device And Electronic Device Made
view source
US Patent:

7312524, Dec 25, 2007
Filed:

Jan 3, 2006
Appl. No.:

11/324479
Inventors:

Stephen M. Gates - Ossining NY, US
Alfred Grill - White Plains NY, US
David R. Medeiros - Ossining NY, US
Deborah Newmayer - Danbury CT, US
Son Van Nguyen - Yorktown Heights NY, US
Vishnubhai V. Patel - Yorktown Heights NY, US
Xinhui Wang - Poughkeepsie NY, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 23/12
H01L 23/053
US Classification:

257701, 257760, 257E21, 257 17, 257277, 257218
Abstract:

A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

Ultrathin Soi Cmos Devices Employing Differential Sti Liners
view source
US Patent:

7659583, Feb 9, 2010
Filed:

Aug 15, 2007
Appl. No.:

11/839272
Inventors:

Zhibin Ren - Hopewell Junction NY, US
Ghavam Shahidi - Pound Ridge NY, US
Dinkar V. Singh - Chicago IL, US
Jeffrey W. Sleight - Ridgefield CT, US
Xinhui Wang - Poughkeepsie NY, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 27/01
H01L 27/12
H01L 31/0392
US Classification:

257351, 257370, 257378, 438199, 438204
Abstract:

An oxynitride pad layer and a masking layer are formed on an ultrathin semiconductor-on-insulator substrate containing a top semiconductor layer comprising silicon. A first portion of a shallow trench is patterned in a top semiconductor layer by lithographic masking of an NFET region and an etch, in which exposed portions of the buried insulator layer is recessed and the top semiconductor layer is undercut. A thick thermal silicon oxide liner is formed on the exposed sidewalls and bottom peripheral surfaces of a PFET active area to apply a high laterally compressive stress. A second portion of the shallow trench is formed by lithographic masking of a PFET region including the PFET active area. A thin thermal silicon oxide or no thermal silicon oxide is formed on exposed sidewalls of the NFET active area, which is subjected to a low lateral compressive stress or no lateral compressive stress.

Process For Making A Mcsfet
view source
US Patent:

7682913, Mar 23, 2010
Filed:

Jan 26, 2009
Appl. No.:

12/359731
Inventors:

Xu Ouyang - Hopewell Junction NY, US
Louis Lu-Chen Hsu - Fishkill NY, US
Xinhui Wang - Poughkeepsie NY, US
Haizhou Yin - Poughkeepsie NY, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 21/336
US Classification:

438289, 257E29264, 257E21135
Abstract:

A process for making a MCSFET includes providing a first implant through a first side of an elongated stack, and then providing a second implant through a second side of the stack. The first implant has a dose different than the dose of the second implant, so that final dopant concentrations in the first and second sides differ and the transistor has two threshold voltages Vt, Vt.