Xun Chen

US Patent:

6803554, Oct 12, 2004

Filed:

Nov 7, 2003

Appl. No.:

10/703732

Inventors:

Jun Ye - Palo Alto CA
R. Fabian W. Pease - Stanford CA
Xun Chen - Palo Alto CA

Assignee:

Brion Technologies, Inc. - Santa Clara CA

International Classification:

H01L 2700

US Classification:

2502081, 25055945

Abstract:

In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment of this aspect of the invention, the system, sensor and technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situâthat is, the aerial image at the wafer plane produced, in part, by a product-type photomask (i. e. , a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

US Patent:

6806456, Oct 19, 2004

Filed:

Aug 22, 2003

Appl. No.:

10/646313

Inventors:

Jun Ye - Palo Alto CA
R. Fabian W. Pease - Stanford CA
Xun Chen - Palo Alto CA

Assignee:

Brion Technologies, Inc. - Santa Clara CA

International Classification:

H01L 2700

US Classification:

2502081, 250548

Abstract:

In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment, the system, sensor and technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situâthat is, the aerial image at the wafer plane produced, in part, by a product-type photomask (i. e. , a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits. In this way, the aerial image used, generated or produced to measure, inspect, characterize and/or evaluate the photomask is the same aerial image used, generated or produced during wafer exposure in integrated circuit manufacturing. In another embodiment, the system, sensor and technique characterizes and/or evaluates the performance of the optical lithographic equipment, for example, the optical sub-system of such equipment.

US Patent:

6807503, Oct 19, 2004

Filed:

Oct 2, 2003

Appl. No.:

10/677563

Inventors:

Jun Ye - Palo Alto CA
Xun Chen - Palo Alto CA

Assignee:

Brion Technologies, Inc. - Santa Clara CA

International Classification:

G06F 1900

US Classification:

702117, 438 18, 15634513

Abstract:

In one aspect, the present invention is a sensor unit for sensing process parameters of a process to manufacture an integrated circuit using integrated circuit processing equipment. In one embodiment, the sensor unit includes a substrate having a wafer-shaped profile and a first sensor, disposed on or in the substrate, to sample a first process parameter. The sensor unit of this embodiment also includes a second sensor, disposed on or in the substrate, to sample a second process parameter wherein the second process parameter is different from the first process parameter. In one embodiment, the sensor unit includes a first source, disposed on or in the substrate, wherein first source generates an interrogation signal and wherein the first sensor uses the interrogation signal from the first source to sample the first process parameter. The sensor unit may also include a second source, disposed on or in the substrate, wherein second source generates an interrogation signal and wherein the second sensor uses the interrogation signal from the second source to sample the second process parameter. The first sensor and the first source may operate in an end-point mode or in a real-time mode.

US Patent:

6820028, Nov 16, 2004

Filed:

Jan 23, 2004

Appl. No.:

10/763433

Inventors:

Jun Ye - Palo Alto CA
Xun Chen - Palo Alto CA

Assignee:

Brion Technologies, Inc. - Santa Clara CA

International Classification:

G01R 2728

US Classification:

702117, 438 18, 15634513

Abstract:

In one aspect, the present invention is a sensor unit for sensing process parameters of a process to manufacture an integrated circuit using integrated circuit processing equipment. In one embodiment, the sensor unit includes a substrate having a wafer-shaped profile and a first sensor, disposed on or in the substrate, to sample a first process parameter. The sensor unit of this embodiment also includes a second sensor, disposed on or in the substrate, to sample a second process parameter wherein the second process parameter is different from the first process parameter. In one embodiment, the sensor unit includes a first source, disposed on or in the substrate, wherein first source generates an interrogation signal and wherein the first sensor uses the interrogation signal from the first source to sample the first process parameter. The sensor unit may also include a second source, disposed on or in the substrate, wherein second source generates an interrogation signal and wherein the second sensor uses the interrogation signal from the second source to sample the second process parameter. The first sensor and the first source may operate in an end-point mode or in a real-time mode.

US Patent:

6828542, Dec 7, 2004

Filed:

Mar 18, 2003

Appl. No.:

10/390806

Inventors:

Jun Ye - Palo Alto CA
R. Fabian W. Pease - Stanford CA
Xun Chen - Palo Alto CA

Assignee:

Brion Technologies, Inc. - Santa Clara CA

International Classification:

H01L 2700

US Classification:

2502081, 2505594

Abstract:

In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment of this aspect of the invention, the system, sensor and/or technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situâthat is, the aerial image at the wafer plane produced, in part, by a production-type photomask (i. e. , a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

US Patent:

6879924, Apr 12, 2005

Filed:

Jan 22, 2004

Appl. No.:

10/763142

Inventors:

Jun Ye - Palo Alto CA, US
Xun Chen - Palo Alto CA, US

Assignee:

Brion Technologies, Inc. - Santa Clara CA

International Classification:

G06F019/00

US Classification:

702117, 438 18, 15634513

Abstract:

In one aspect, the present invention is a sensor unit for sensing process parameters of a process to manufacture an integrated circuit using integrated circuit processing equipment. In one embodiment, the sensor unit includes a substrate having a wafer-shaped profile and a first sensor, disposed on or in the substrate, to sample a first process parameter. The sensor unit of this embodiment also includes a second sensor, disposed on or in the substrate, to sample a second process parameter wherein the second process parameter is different from the first process parameter. In one embodiment, the sensor unit includes a first source, disposed on or in the substrate, wherein first source generates an interrogation signal and wherein the first sensor uses the interrogation signal from the first source to sample the first process parameter. The sensor unit may also include a second source, disposed on or in the substrate, wherein second source generates an interrogation signal and wherein the second sensor uses the interrogation signal from the second source to sample the second process parameter. The first sensor and the first source may operate in an end-point mode or in a real-time mode.

US Patent:

6884984, Apr 26, 2005

Filed:

Jan 12, 2004

Appl. No.:

10/755809

Inventors:

Jun Ye - Palo Alto CA, US
R. Fabian W. Pease - Stanford CT, US
Xun Chen - Palo Alto CA, US

Assignee:

Brion Technologies, Inc. - Santa Clara CA

International Classification:

H01L027/00

US Classification:

2502081, 250548

Abstract:

In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment, the system, sensor and technique measures, collects and/or detects an aerial image (or portion thereof) produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a production-type photomask (i. e. , a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits. A processing unit, coupled to the image sensor unit, may measure the critical dimensions of features of the photomask, using data which is representative of the intensity of light sampled by the image sensor unit, to control at least one operating parameter of the lithographic equipment.

US Patent:

6892156, May 10, 2005

Filed:

Jun 22, 2004

Appl. No.:

10/874093

Inventors:

Jun Ye - Palo Alto CA, US
Xun Chen - Palo Alto CA, US

Assignee:

Brion Technologies, Inc. - Santa Clara CA

International Classification:

G06F019/00

US Classification:

702117, 438 18, 15634513

Abstract:

In one aspect, the present invention is a sensor unit for sensing process parameters of a process to manufacture an integrated circuit using integrated circuit processing equipment. In one embodiment, the sensor unit includes a substrate having a wafer-shaped profile and a first sensor, disposed on or in the substrate, to sample a first process parameter. The sensor unit of this embodiment also includes a second sensor, disposed on or in the substrate, to sample a second process parameter wherein the second process parameter is different from the first process parameter. In one embodiment, the sensor unit includes a first source, disposed on or in the substrate, wherein first source generates an interrogation signal and wherein the first sensor uses the interrogation signal from the first source to sample the first process parameter. The sensor unit may also include a second source, disposed on or in the substrate, wherein second source generates an interrogation signal and wherein the second sensor uses the interrogation signal from the second source to sample the second process parameter. The first sensor and the first source may operate in an end-point mode or in a real-time mode.