Yi Zheng

US Patent:

6815373, Nov 9, 2004

Filed:

Apr 16, 2002

Appl. No.:

10/124655

Inventors:

Vinita Singh - Mountain View CA
Srinivas D. Nemani - San Jose CA
Yi Zheng - San Jose CA
Lihua Li - San Jose CA
Li-Qun Xia - Santa Clara CA
Ellie Yieh - San Jose CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438787, 438788, 438789, 438790

Abstract:

A method for depositing a low dielectric constant film having a dielectric constant of about 3. 5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

US Patent:

6890850, May 10, 2005

Filed:

Jul 15, 2002

Appl. No.:

10/196498

Inventors:

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L021/4763
H01L021/31
H01L021/469

US Classification:

438631, 438634, 438638, 438789

Abstract:

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

US Patent:

7056560, Jun 6, 2006

Filed:

Feb 4, 2004

Appl. No.:

10/773060

Inventors:

Kang Sub Yim - Santa Clara CA, US
Yi Zheng - San Jose CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Eric P. Hollar - Cupertino CA, US

Assignee:

Applies Materials Inc. - Santa Clara CA

International Classification:

C23C 16/56
C23C 16/48
C23C 16/42
C23C 16/40
H01L 21/473

US Classification:

427551, 42725537, 42724915, 438789, 438786

Abstract:

A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

US Patent:

7089651, Aug 15, 2006

Filed:

Oct 5, 2001

Appl. No.:

09/971277

Inventors:

Yi Zheng - San Ramon CA, US
Yi-Chun Liu - Fremont CA, US

Assignee:

Headway Technologies, Inc. - Milpitas CA

International Classification:

G11B 5/17
G03F 7/00

US Classification:

2960324, 2960323, 2960325, 2960308, 29606, 430320, 430313, 360122, 360123

Abstract:

A method for forming at least two layers of electrical coils and their supportive resistive layers for a magnetic write head having an ultra-short yoke so that the second and any additional coil layers are formed on flat resistive surfaces to eliminate problems associated with inter- and intra-layer shorting and with shorting between coil and yoke. The resistive layers are formed with flat surfaces and desired apex angles by using a novel two-step photoresist scheme in which a layer of photoresist is first photoexposed and developed, then photoexposed a second time to cure a surface region that will remain flat during a final low temperature curing process.

US Patent:

7151053, Dec 19, 2006

Filed:

Apr 28, 2005

Appl. No.:

11/118678

Inventors:

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763
H01L 21/31
H01L 21/469

US Classification:

438631, 438634, 438638, 438789

Abstract:

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

US Patent:

7189582, Mar 13, 2007

Filed:

Apr 27, 2005

Appl. No.:

11/116928

Inventors:

Jian Chen - Sunnyvale CA, US
Holger Keim - Wyckoff NJ, US
Yi Feng Zheng - Wilmington DE, US
Yali Yang - Bear DE, US
Cathy K. Worley - Washington DC, US

Assignee:

Dade Behring Inc. - Deerfield IL

International Classification:

G01N 33/532
C07K 16/44
C07K 1/13
C07D 267/00

US Classification:

436544, 436 56, 436815, 435 71, 435 793, 5303898, 530403, 530405, 530807, 540456

Abstract:

Compounds are disclosed comprising a moiety, such as a poly(amino acid), a non-poly(amino acid) label moiety, or a non-poly(amino acid) immunogenic carrier, linked to a sirolimus compound at position 26 or at position 32. Such sirolimus compounds comprising an immunogenic carrier can be employed to raise both polyclonal and monoclonal antibodies to the sirolimus compound. Polyclonal antibodies are also disclosed, which are raised against a compound wherein a moiety, such as a poly(amino acid), a non-poly(amino acid) label moiety, or a non-poly(amino acid) immunogenic carrier, is linked to a sirolimus compound at position 32. The above antibodies and sirolimus compounds comprising a label can be used in assays for the detection of sirolimus compounds.

US Patent:

7217666, May 15, 2007

Filed:

Mar 2, 2004

Appl. No.:

10/792330

Inventors:

Hung-Chin Guthrie - Saratoga CA, US
Ming Jiang - San Jose CA, US
Jerry Lo - San Jose CA, US
Aron Pentek - San Jose CA, US
Yi Zheng - San Ramon CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

H01L 21/461

US Classification:

438738, 438 3, 438 64, 438712, 257E21218, 360 9701, 360125, 2960307, 2960316

Abstract:

A method for forming a high aspect ratio magnetic structure in a magnetic write head using a combination of chemical mechanical polishing and reactive ion etching.

US Patent:

7251878, Aug 7, 2007

Filed:

Jun 30, 2004

Appl. No.:

10/884368

Inventors:

Quang Le - San Jose CA, US
Jui-Lung Li - San Jose CA, US
Yvette Chung Nga Winton - San Francisco CA, US
Sue Siyang Zhang - Saratoga CA, US
Yi Zheng - San Ramon CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/187
B44C 1/22

US Classification:

2960316, 2960312, 2960318, 2960313, 2960315, 216 22, 216 41, 216 66, 216 89, 2041922, 20419235

Abstract:

A method and apparatus for defining leading edge taper of a write pole tip is disclosed. The fabrication process uses reactive ion etching to fabricate LET with tight control of the placement of LET's edge and to achieve higher angle for providing a higher effective write field at the pole tip while minimizing ATI for high-density perpendicular recording. The placement of a resist's edge is used to define the LET's edge and a CMP process is used to provide a planar surface for the fabrication of the write pole.