Ying Hing Tang

US Patent:

20100005857, Jan 14, 2010

Filed:

Apr 27, 2007

Appl. No.:

11/796741

Inventors:

Hong Zhang - Metuchen NJ, US
Ying Tang - Glassboro NJ, US
Patricia Mosto - Pitman NJ, US
Courtney E. Richmond - Glassboro NJ, US

Assignee:

Rowan University - Glassboro NJ

International Classification:

G01C 13/00
G01W 1/14
G01N 19/10
B01J 19/00
G01R 29/00

US Classification:

73 2902, 7317029, 7317017, 422 681, 324722

Abstract:

An Interactive Mobile Aquatic Probing and Surveillance system. The system includes a remote aquatic or amphibious agent which is controlled by a typically land-based computer host. The agent is a field robot in the form of a comparatively small and inexpensive, untethered, self-propelled, aquatic or amphibious, non-submersible vehicle that preferably carries physical and water characteristic sensors, as well as other operational equipment for use on relatively small bodies of water and wetlands. The host interacts with a human operator and provides control commands to and receives data from the agent in real time via a wireless communication between the agent and the host. The control commands include guidance commands including navigational and propulsion commands as well as commands for operating the sensors and various other equipment carried by the agent.

US Patent:

20190103275, Apr 4, 2019

Filed:

Oct 2, 2018

Appl. No.:

16/149792

Inventors:

- Billerica MA, US
Sharad N. Yedave - Danbury CT, US
Joseph D. Sweeney - New Milford CT, US
Barry Lewis Chambers - Midlothian VA, US
Ying Tang - Brookfield CT, US

International Classification:

H01L 21/265
H01L 31/18
H01J 37/244
H01J 37/08
H01J 37/317

Abstract:

Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphor-us-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

US Patent:

20170250084, Aug 31, 2017

Filed:

Aug 19, 2015

Appl. No.:

15/507859

Inventors:

- Billerica MA, US
Sharad N. Yedave - Danbury CT, US
Joseph D. Sweeney - New Milford CT, US
Barry Lewis Chambers - Midlothian VA, US
Ying Tang - Brookfield CT, US

International Classification:

H01L 21/265
H01J 37/244
H01L 31/18
H01J 37/317

Abstract:

Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

US Patent:

20150357152, Dec 10, 2015

Filed:

Aug 17, 2015

Appl. No.:

14/827783

Inventors:

- Billerica MA, US
Sharad N. Yedave - Danbury CT, US
Ying Tang - Brookfield CT, US
Barry Lewis Chambers - Midlothian VA, US
Robert Kaim - Brookline MA, US
Joseph D. Sweeney - New Milford CT, US
Oleg Byl - Southbury CT, US
Peng Zou - Ridgefield CT, US

Assignee:

Entegris, Inc. - Billerica MA

International Classification:

H01J 37/08
H01J 37/317

Abstract:

An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as BFor other alternatives to BF. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, equilibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

US Patent:

20140342538, Nov 20, 2014

Filed:

Aug 5, 2014

Appl. No.:

14/452192

Inventors:

- Danbury CT, US
Sharad N. Yedave - Danbury CT, US
Ying Tang - Brookfield CT, US
Barry Lewis Chambers - Midlothian VA, US
Robert Kaim - Brookline MA, US
Joseph D. Sweeney - New Milford CT, US
Oleg Byl - Southbury CT, US
Peng Zou - Ridgefield CT, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

H01L 21/265
C23C 14/52
C23C 14/48

US Classification:

438530, 118723 E, 118708

Abstract:

An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as BFor other alternatives to BF. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.