Ying Tang

US Patent:

8062965, Nov 22, 2011

Filed:

Mar 15, 2011

Appl. No.:

13/048367

Inventors:

Robert Kaim - Brookline MA, US
Joseph D. Sweeney - Winsted CT, US
Oleg Byl - Southbury CT, US
Sharad N. Yedave - Danbury CT, US
Edward E. Jones - Woodbury CT, US
Peng Zou - Ridgefield CT, US
Ying Tang - Brookfield CT, US
Barry Lewis Chambers - Midlothian VA, US
Richard S. Ray - New Milford CT, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

H01L 21/26
H01L 21/42

US Classification:

438513, 438525, 438535

Abstract:

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of BF. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

US Patent:

8138071, Mar 20, 2012

Filed:

Oct 27, 2010

Appl. No.:

12/913721

Inventors:

Robert Kaim - Brookline MA, US
Joseph D. Sweeney - Winsted CT, US
Oleg Byl - Southbury CT, US
Sharad N. Yedave - Danbury CT, US
Edward E. Jones - Woodbury CT, US
Peng Zou - Ridgefield CT, US
Ying Tang - Brookfield CT, US
Barry Lewis Chambers - Midlothian VA, US
Richard S. Ray - New Milford CT, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

H01L 21/26
H01L 21/42

US Classification:

438513, 438525, 438535, 257E21311

Abstract:

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of BF. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

US Patent:

8598022, Dec 3, 2013

Filed:

Nov 19, 2011

Appl. No.:

13/300575

Inventors:

Robert Kaim - Brookline MA, US
Joseph D. Sweeney - Winsted CT, US
Oleg Byl - Southbury CT, US
Sharad N. Yedave - Danbury CT, US
Edward E. Jones - Woodbury CT, US
Peng Zou - Ridgefield CT, US
Ying Tang - Brookfield CT, US
Barry Lewis Chambers - Midlothian VA, US
Richard S. Ray - New Milford CT, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

H01L 21/425

US Classification:

438515, 257E21334, 257E21473, 427523

Abstract:

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of BF. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

US Patent:

20110253055, Oct 20, 2011

Filed:

Nov 10, 2009

Appl. No.:

12/998257

Inventors:

Ying Tang - Cambridge MA, US
Igor Sokolik - Cambridge MA, US
Adam Winkleman - Cambridge MA, US
Seth Johnson - Cambridge MA, US
Brian Mayers - Cambridge MA, US
Patrick Reust - Cambridge MA, US
Wendell Ray Guffey - Swansea IL, US
Yimin Zhang - Ballwin MO, US
Regina Pratt - St. Louis MO, US

International Classification:

A01K 1/01
A01K 29/00

US Classification:

119173, 119171

Abstract:

The invention provides animal litters and methods of making and using such litters. The animal litters comprise (a) a plurality of absorbent particles comprising (i) a non-swelling particle and (ii) a clumping material coated on the non-swelling particle and (b) a plurality of one or more filler particles that are not associated with the absorbent particles. The filler particles provide additional functionality to the litters, e.g., controlling odor, absorbing moisture, releasing fragrance, controlling microorganisms, controlling dust, reducing density, reducing weight, and combinations thereof. The litters are made by producing the absorbent particles using conventional means and combining the absorbent particles with one or more filler particles that impart the desired characteristic to the litters.

US Patent:

20110259366, Oct 27, 2011

Filed:

Feb 11, 2009

Appl. No.:

12/867245

Inventors:

Joseph D. Sweeney - Winsted CT, US
Sharad N. Yedave - Danbury CT, US
Oleg Byl - Southbury CT, US
Robert Kaim - Brookline MA, US
David Eldridge - Liberty Hill TX, US
Steven Sergi - Woodbury CT, US
Lin Feng - Danbury CT, US
Steven E. Bishop - Corrales NM, US
W. Karl Olander - Indian Shores FL, US
Ying Tang - Danbury CT, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

B08B 7/00
H01L 21/265
B08B 5/00

US Classification:

134 10, 134 221, 134 2211, 134 2219, 134 2213, 134 23, 134 18

Abstract:

Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

US Patent:

20120058252, Mar 8, 2012

Filed:

Aug 12, 2009

Appl. No.:

13/201188

Inventors:

Joseph D. Sweeney - Winsted CT, US
Sharad N. Yedave - Danbury CT, US
Oleg Byl - Southbury CT, US
Robert Kaim - Brookline MA, US
David Eldridge - Liberty Hill TX, US
Lin Feng - Orange CT, US
Steven E. Bishop - Corrales NM, US
W. Karl Olander - Indian Shores FL, US
Ying Tang - Danbury CT, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

B08B 5/00
B05D 3/10
B05D 5/12

US Classification:

427 58, 134 31

Abstract:

Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.