Yiu W Wong

US Patent:

45718180, Feb 25, 1986

Filed:

Sep 29, 1983

Appl. No.:

6/537057

Inventors:

McDonald Robinson - Chester NJ
Harry T. Weston - New Providence NJ
Yiu H. Wong - Berkeley Heights NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2176

US Classification:

29576W

Abstract:

A semiconductor structure including a pair of single-crystal semiconductor bulk regions (10. 3, 12. 2) of differing first and second bulk conductivities, respectively, for forming semiconductor circuits therein, is fabricated whereby each such region is electrically isolated from the other and from a rigid body (20) supporting these regions. The structure is formed by forming at a major surface of a single crystal semiconductor water (10) having the first bulk conductivity a bulk zone (12. 1) having the second bulk conductivity, followed by the steps of (1) forming in the wafer (10) at the major surface (10. 6) thereof a V-shaped groove (10. 2) at the boundary of the bulk zone (12. 1) using a crystallographic orientation dependent etch, in order to define the regions (10. 3, 12. 2) of differing conductivities, (2) forming a dielectric layer (15. 1, 15.

US Patent:

50258311, Jun 25, 1991

Filed:

Aug 24, 1990

Appl. No.:

7/571691

Inventors:

Yiu Wah Wong - Succasunna NJ
Jeffrey W. Frederick - Morris Plains NJ
Rutton D. Patel - Berkeley Heights NJ

Assignee:

Exxon Research & Engineering Company - Florham Park NJ

International Classification:

B05B 114

US Classification:

137561A

Abstract:

According to the present invention, there is provided a radial flow distributor comprising a cylindrical body portion having a vertical side wall, a top and a bottom. The cylindrical body portion has a horizontal baffle plate disposed within it, thereby dividing the body portion into a first compartment and a second compartment. The horizontally disposed baffle plate preferably is circular in shape and sufficiently large that it meets the side walls of the cylindrical body portion. The baffle also has a central opening in it. Conduit means, operably connected to the first compartment, are provided for introducing fluid to that compartment. A plurality of apertures are evenly spaced around the periphery of the side wall of the second compartment for distributing fluid from the distributor radially outwardly.

US Patent:

54035619, Apr 4, 1995

Filed:

Aug 27, 1993

Appl. No.:

8/113163

Inventors:

Robert M. Koros - Westfield NJ
Yiu W. Wong - Succasunna NJ
John T. Wyatt - Florham Park NJ
David C. Dankworth - Whitehouse Station NJ

Assignee:

Exxon Research & Engineering Co. - Florham Park NJ

International Classification:

B01J 804

US Classification:

422195

Abstract:

The uniform distribution of mixed phase fluid stream on to the top of a contact bed in a reactor chamber is provided by a horizontal tray with a plurality of spaced-apart, vertically disposed chimneys extending through the tray. These chimneys have a first end to receive liquid and gas above the tray and a second end for distributing the liquid and gas downwardly below the tray. Importantly, the second end is provided with a spray generating device located below the tray for producing a conical downward spray of the mixed fluid phase onto the top surface of a bed of contact material positioned below the tray. The spray generating devices for producing the conical spray are located at positions so that the spray of the mixed fluid stream from one spray generating device as it impinges on the top surface of the fixed bed, will overlap the spray from an adjacent spray generating device.

US Patent:

45010609, Feb 26, 1985

Filed:

Jan 24, 1983

Appl. No.:

6/460399

Inventors:

Robert C. Frye - Piscataway NJ
Joseph E. Griffith - New Providence NJ
Yiu H. Wong - Berkeley Heights NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21306
H01L 2176

US Classification:

29576W

Abstract:

Dielectrically isolated single crystal silicon of high quality is produced by an extremely convenient process. This process involves the fusing of two silicon bodies where at least one of these bodies has a region of silicon oxide. The bodies are contacted so that the silicon oxide is at an interface between the two bodies. The bodies are then heated to an elevated temperature while applying a nominal electrical potential across the interface. This combination of applied potential and temperature permanently fuses the two bodies without producing any significant damage to the crystal quality of these bodies.