Yong J Sun

US Patent:

20230130557, Apr 27, 2023

Filed:

Mar 3, 2021

Appl. No.:

17/907959

Inventors:

- Fremont CA, US
Leonard Wai Fung KHO - San Francisco CA, US
Anand CHANDRASHEKAR - Fremont CA, US
Michael BOWES - Scotts Valley CA, US
Yong SUN - Fremont CA, US
Xing ZHANG - San Jose CA, US
Sumit Subhash SINGH - Bengaluru, IN

International Classification:

C23C 16/455
C23C 16/04
C23C 16/52
H01L 21/02
H01L 21/285
H01L 21/768

Abstract:

Providing herein are methods of delivery of gas reactants to a processing chamber and related apparatus.

US Patent:

20210318715, Oct 14, 2021

Filed:

Feb 18, 2021

Appl. No.:

17/178556

Inventors:

- Cupertino CA, US
Kuan H. Lu - Santa Clara CA, US
Paul S. Drzaic - Morgan Hill CA, US
Yung-Yu Hsu - San Jose CA, US
Yong Sun - Sunnyvale CA, US
Zhen Zhang - Sunnyvale CA, US
Bulong Wu - San Jose CA, US
Marc J. DeVincentis - Palo Alto CA, US
Paolo Sacchetto - Cupertino CA, US
Han-Chieh Chang - Sunnyvale CA, US
Anshi Liang - San Jose CA, US

International Classification:

G06F 1/16

Abstract:

An electronic device display may have pixels formed from crystalline semiconductor light-emitting diode dies, organic light-emitting diodes, or other pixel structures. The pixels may be formed in a display panel having a single substrate or an array of display panel tiles. The display panel has inwardly facing display panel contacts that mate with corresponding outwardly facing interconnect substrate contacts on an interconnect substrate. The interconnect substrate may have areas with compound curvature that are overlapped by the display panel. To enhance flexibility of the interconnect substrate, the interconnect substrate may have flexibility enhancement openings and/or may be formed from a material with a low elastic modulus such as silicone or other elastomeric material.

US Patent:

20200286773, Sep 10, 2020

Filed:

May 26, 2020

Appl. No.:

16/882989

Inventors:

- Santa Clara CA, US
Yong SUN - San Jose CA, US
Jinrui GUO - Santa Clara CA, US
Praket P. JHA - San Jose CA, US
Jung Chan LEE - San Jose CA, US
Mukund SRINIVASAN - Fremont CA, US

International Classification:

H01L 21/762
H01L 21/02
H01L 21/67
H01J 37/32
C23C 16/455
C23C 16/32
C23C 16/36
C23C 16/40
C23C 16/30
C23C 16/34
C23C 16/505
C23C 16/04

Abstract:

Embodiments disclosed herein relate to cluster tools for forming and filling trenches in a substrate with a flowable dielectric material. In one or more embodiments, a cluster tool for processing a substrate contains a load lock chamber, a first vacuum transfer chamber coupled to the load lock chamber, a second vacuum transfer chamber, a cooling station disposed between the first vacuum transfer chamber and the second vacuum transfer chamber, a factory interface coupled to the load lock chamber, a plurality of first processing chambers coupled to the first vacuum transfer chamber, wherein each of the first processing chambers is a deposition chamber capable of performing a flowable layer deposition, and a plurality of second processing chambers coupled to the second vacuum transfer chamber, wherein each of the second processing chambers is a plasma chamber capable of performing a plasma curing process.

US Patent:

20180330980, Nov 15, 2018

Filed:

May 11, 2018

Appl. No.:

15/977380

Inventors:

- Santa Clara CA, US
Yong SUN - San Jose CA, US
Jinrui GUO - Santa Clara CA, US
Praket P. JHA - San Jose CA, US
Jung Chan LEE - San Jose CA, US
Mukund SRINIVASAN - Fremont CA, US

International Classification:

H01L 21/762
H01L 21/02
H01L 21/67
H01J 37/32
C23C 16/455
C23C 16/32
C23C 16/36
C23C 16/40
C23C 16/30
C23C 16/34

Abstract:

Implementations disclosed herein relate to methods for forming and filling trenches in a substrate with a flowable dielectric material. In one implementation, the method includes subjecting a substrate having at least one trench to a deposition process to form a flowable layer over a bottom surface and sidewall surfaces of the trench in a bottom-up fashion until the flowable layer reaches a predetermined deposition thickness, subjecting the flowable layer to a first curing process, the first curing process being a UV curing process, subjecting the UV cured flowable layer to a second curing process, the second curing process being a plasma or plasma-assisted process, and performing sequentially and repeatedly the deposition process, the first curing process, and the second curing process until the plasma cured flowable layer fills the trench and reaches a predetermined height over a top surface of the trench.

US Patent:

20170175603, Jun 22, 2017

Filed:

Dec 17, 2015

Appl. No.:

14/972642

Inventors:

- Lake Forest IL, US
Yong SUN - Ann Arbor MI, US

International Classification:

F01N 3/20
F01N 3/08

Abstract:

An exhaust after-treatment system including an exhaust passage, a lean-NOx trap (LNT) provided in the exhaust passage, a tank carrying an aqueous reagent, an electrochemical cell in communication with the tank and configured to receive the aqueous reagent therefrom, the electrochemical cell configured to convert the aqueous reagent into a hydrogen exhaust treatment fluid for purging the LNT, and a controller in communication with the electrochemical cell, wherein the controller is configured to vary an amount of the hydrogen exhaust treatment fluid produced by the electrochemical cell.