Yong K Zheng

US Patent:

50047981, Apr 2, 1991

Filed:

May 12, 1989

Appl. No.:

7/350799

Inventors:

Jerry A. Broussard - Summit NJ
Andrew B. Auerbach - Livingston NJ
Nan L. Yang - Staten Island NY
James L. Paul - Summit NJ
Yong C. Zheng - New York NY
Chong L. Zhang - Staten Island NY

Assignee:

Hoechst Celanese Corporation - Somerville NJ

International Classification:

C08G 400

US Classification:

528230

Abstract:

Cationic copolymerization of trioxane and trimethylolpropane (TMP) formal or its ester derivatives yields acetal copolymers having pendant functional groups. The TMP formal or ester derivatives of TMP formal may therefore include functional groups selected from hydroxyl or ester moieties which are protected and thus survive the copolymerization with trioxane. These groups may then be present as functional reactive sites for the subsequent synthesis of block copolymers and/or to chemically bind modifiers to the acetal copolymer backbone, for example.

US Patent:

50344994, Jul 23, 1991

Filed:

Apr 13, 1988

Appl. No.:

7/181233

Inventors:

Andrew Auerbach - Livingston NJ
James L. Paul - Summit NJ
Yong C. Zheng - New York NY
Shian S. Wang - New York NY

Assignee:

Hoechst Celanese Corp. - Short Hills NJ

International Classification:

C08G 222

US Classification:

528250

Abstract:

Acetal copolymers of trioxane with epoxy functional groups are obtained by copolymerizing trioxane with 5,6-epoxy-1,3-dioxepane. The epoxide group in the polymer chain provides a highly reacting functional group for further modification. Acetal copolymers with backbone epoxide groups exhibit toughness and thermal stability. The backbone epoxide groups can also be aminated in a one step hydrolysis-amination process.

US Patent:

20220349088, Nov 3, 2022

Filed:

Apr 28, 2021

Appl. No.:

17/243158

Inventors:

- Santa Clara CA, US
Nyi Oo MYO - San Jose CA, US
Tao SHENG - Santa Clara CA, US
Yong ZHENG - Dublin CA, US

International Classification:

C30B 25/16
C30B 23/00
C30B 25/12
C30B 25/10
C30B 23/06
C23C 14/54
C23C 16/46
C23C 16/52
C23C 16/458
C23C 14/50
G01N 21/55

Abstract:

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.