Young C Choi

US Patent:

8430961, Apr 30, 2013

Filed:

Sep 5, 2008

Appl. No.:

12/205363

Inventors:

Beom Soo Park - San Jose CA, US
Young Jin Choi - Santa Clara CA, US
Robin L. Tiner - Santa Cruz CA, US
Sam H. Kim - San Ramon CA, US
Soo Young Choi - Fremont CA, US
John M. White - Hayward CA, US
Dong-Kil Yim - Seongnam-si, KR

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
H01L 21/306

US Classification:

118715, 15634531, 15634532

Abstract:

The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.

US Patent:

20050279396, Dec 22, 2005

Filed:

Jun 17, 2004

Appl. No.:

10/869999

Inventors:

Young Choi - Santa Clara CA, US

International Classification:

A45B003/00
A45B005/00
E04H015/36
E04H015/44

US Classification:

135133000

Abstract:

A head shade comprises a shade fabric stretched over a collapsible set of bow frames. These all join externally at bow pivots on the left and right sides that are at ear height. The shade and bows can all be folded back out of the way. Interior to each bow pivot, loudspeakers are included that allow the user to listen to music and other audio. The bow pivots are fastened to the tops of left and right stems. Such stems are attached by adjustable hinges to a shoulder yoke and body straps. The straps are anchored to a belt worn around the waist of the user to stabilize the stems and bow pivots.

US Patent:

20090107955, Apr 30, 2009

Filed:

Sep 5, 2008

Appl. No.:

12/205414

Inventors:

ROBIN L. TINER - Santa Cruz CA, US
Suhail Anwar - San Jose CA, US
Gaku Furuta - Sunnyvale CA, US
Young Jin Choi - Santa Clara CA, US
Beom Soo Park - San Jose CA, US
Soo Young Choi - Fremont CA, US
John M. White - Hayward CA, US

International Classification:

B44C 1/22
C23C 16/455
C23C 16/44
C23F 1/08

US Classification:

216 67, 118715, 4272481, 427569, 15634535

Abstract:

The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.

US Patent:

20090283039, Nov 19, 2009

Filed:

May 18, 2009

Appl. No.:

12/467477

Inventors:

JOHN M. WHITE - Hayward CA, US
Soo Young Choi - Fremont CA, US
Beom Soo Park - San Jose CA, US
Gaku Furuta - Sunnyvale CA, US
Young Jin Choi - Santa Clara CA, US
Robin L. Tiner - Santa Cruz CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

C23C 16/54
F28D 7/00

US Classification:

118723 R, 165164

Abstract:

The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

US Patent:

20100151688, Jun 17, 2010

Filed:

Dec 10, 2009

Appl. No.:

12/634921

Inventors:

Young Jin Choi - Santa Clara CA, US
Gaku Furuta - Sunnyvale CA, US
Soo Young Choi - Fremont CA, US
Beom Soo Park - San Jose CA, US

Assignee:

Applied Materials, INC. - Santa Clara CA

International Classification:

H01L 21/3065
H01L 21/302

US Classification:

438716, 438758, 257E21218, 257E21214

Abstract:

Embodiments disclosed herein generally include methods of ensuring uniform deposition on a substrate. The smallest gap between a portion of the substrate and the substrate support upon which the substrate rests may lead to uneven deposition of material or ‘thin spots’ on the substrate. Large area substrates, due to their size, are susceptible to numerous gaps at random locations. By inducing an electrostatic charge on the substrate prior to placing the substrate onto the substrate support, the substrate may be placed generally flush against the substrate support. The electrostatic charge on the substrate creates an attraction between the substrate and substrate support to pull substantially the entire surface of the substrate into contact with the substrate support. Material may then be substantially uniformly deposited on the substrate while reducing ‘thin spots’.

US Patent:

20130087783, Apr 11, 2013

Filed:

Sep 28, 2012

Appl. No.:

13/630901

Inventors:

Qunhua Wang - San Jose CA, US
Weijie Wang - Cupertino CA, US
Young Jin Choi - Santa Clara CA, US
Yi Cui - San Jose CA, US
Beom Soo Park - Cupertino CA, US
Soo Young Choi - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/316
H01L 21/31
H01L 29/786

US Classification:

257 43, 438788, 438764

Abstract:

Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

US Patent:

20130140009, Jun 6, 2013

Filed:

Dec 20, 2012

Appl. No.:

13/722637

Inventors:

John M. White - Hayward CA, US
Soo Young Choi - Fremont CA, US
Beom Soo Park - San Jose CA, US
Gaku Furuta - Sunnyvale CA, US
Young Jin Choi - Santa Clara CA, US
Robin L. Tiner - Santa Cruz CA, US

International Classification:

F28D 7/00

US Classification:

165164

Abstract:

The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

US Patent:

20130210199, Aug 15, 2013

Filed:

Feb 15, 2013

Appl. No.:

13/768921

Inventors:

Jrjyan Jerry CHEN - Campbell CA, US
Tae K. WON - San Jose CA, US
Beom Soo PARK - San Jose CA, US
Young Jin CHOI - Santa Clara CA, US
Soo Young CHOI - Fremont CA, US

International Classification:

H01L 51/52

US Classification:

438127

Abstract:

A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cmto about 0.903 watts/cmto a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.